Memory device and operating method thereof
First Claim
1. A memory device comprising:
- a memory cell array including a plurality of memory cells respectively coupled to a plurality of word lines;
a peripheral circuit configured to perform at least one program loop including applying a program voltage to selected memory cells coupled to a selected word line among the plurality of word lines and determining whether the selected memory cells have been completely programmed; and
control logic configured to control the peripheral circuit to, while the program voltage is being applied to the selected word line, apply program control voltages of different levels, which are set according to target program states, to bit lines respectively coupled to memory cells in a first memory cell group among the selected memory cells and apply a program allowable voltage, which is set at a same level regardless of the target program states, to bit lines respectively coupled to memory cells in a second memory cell group among the selected memory cells.
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Abstract
A memory device includes: a memory cell array including a plurality of memory cells respectively coupled to a plurality of word lines; a peripheral circuit configured to perform at least one program loop including applying a program voltage to selected memory cells coupled to a selected word line among the plurality of word lines and determining whether the selected memory cells have been completely programmed; and control logic configured to control the peripheral circuit to, while the program voltage is being applied to the selected word line, apply program control voltages of different levels to bit lines respectively coupled to memory cells in a first memory cell group among the selected memory cells and apply a program allowable voltage to bit lines respectively coupled to memory cells in a second memory cell group among the selected memory cells.
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Citations
19 Claims
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1. A memory device comprising:
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a memory cell array including a plurality of memory cells respectively coupled to a plurality of word lines; a peripheral circuit configured to perform at least one program loop including applying a program voltage to selected memory cells coupled to a selected word line among the plurality of word lines and determining whether the selected memory cells have been completely programmed; and control logic configured to control the peripheral circuit to, while the program voltage is being applied to the selected word line, apply program control voltages of different levels, which are set according to target program states, to bit lines respectively coupled to memory cells in a first memory cell group among the selected memory cells and apply a program allowable voltage, which is set at a same level regardless of the target program states, to bit lines respectively coupled to memory cells in a second memory cell group among the selected memory cells. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for operating a memory device including a plurality of memory cells respectively coupled to a plurality of word lines, the method comprising:
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performing at least one program loop including applying a program voltage to selected memory cells coupled to a selected word line among the plurality of word lines and determining whether the selected memory cells have been completely programmed; and while the program voltage is being applied to the selected word line, applying program control voltages of different levels to bit lines respectively coupled to memory cells in a first memory cell group among the selected memory cells and applying a program allowable voltage to bit lines respectively coupled to memory cells in a second memory cell group among the selected memory cells, wherein the levels of program control voltages are set according to target program states and the program allowable voltage is set at a same level regardless of the target program states. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification