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Gate cut with integrated etch stop layer

  • US 10,665,589 B2
  • Filed: 08/03/2018
  • Issued: 05/26/2020
  • Est. Priority Date: 09/07/2016
  • Status: Active Grant
First Claim
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1. An electrical device comprising:

  • a first active region having a first gate structure;

    a second active region having a second gate structure, wherein the first and second gate structures are aligned to one another and separated by a gate cut trench;

    a first portion of a conformal dielectric layer on at least sidewall surfaces of the gate cut trench;

    a dielectric fill filling a lower portion of the gate cut trench; and

    a power rail in an upper portion of the gate cut trench, wherein a second portion of the conformal dielectric layer separates the dielectric fill from the power rail in which the first and second portions of the conformal dielectric layer are comprised of hafnium oxide.

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