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Gate feature in finFET device

  • US 10,665,686 B2
  • Filed: 04/08/2019
  • Issued: 05/26/2020
  • Est. Priority Date: 07/18/2017
  • Status: Active Grant
First Claim
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1. A method for forming a fin field-effect transistor (FinFET), comprising:

  • forming a fin structure protruding a major surface of a substrate;

    exposing an upper portion of the fin structure by surrounding a lower portion of the fin structure;

    forming a dummy poly layer over the upper portion of the fin structure;

    etching an upper side portion of the dummy poly layer using a first etching process;

    etching a lower side portion of the dummy poly layer using a second etching process thereby exposing an end portion of the upper portion of the fin and forming a poly footing feature that extends beyond a vertical sidewall of a remaining portion of the dummy poly layer;

    forming a dielectric layer over the exposed end portion and along the vertical sidewall; and

    removing the remaining portion of the dummy poly layer and the poly footing feature thereby forming a void to expose a central portion and a side portion of the upper portion of the fin structure, wherein the side portion extends beyond a vertical projection of the vertical sidewall.

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