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Semiconductor device with deep diffusion region

  • US 10,665,705 B2
  • Filed: 02/28/2019
  • Issued: 05/26/2020
  • Est. Priority Date: 10/27/2015
  • Status: Active Grant
First Claim
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1. A power semiconductor transistor comprising:

  • a semiconductor body; and

    at least one transistor cell, the at least one transistor cell comprising;

    a semiconductor drift region included in the semiconductor body and having dopants of a first conductivity type;

    a semiconductor body region included in the semiconductor body and having dopants of a second conductivity type;

    a source region, wherein the semiconductor body region isolates the source region from the semiconductor drift region;

    a trench extending into the semiconductor body along a vertical direction and comprising a control electrode electrically insulated from each of the semiconductor drift region, the semiconductor body region and the source region; and

    a semiconductor region having dopants of the second conductivity type and being arranged adjacent to the trench and separated from the semiconductor body region, wherein a transition between the trench and the semiconductor region extends along a trench sidewall of the trench,wherein a dopant concentration of the semiconductor region adjacent to the trench sidewall amounts to a value that is within a range of 50% to 150% of a fixed dopant concentration value at any point along at least 60% of a total extension of the semiconductor region in the vertical direction.

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