Memory element and memory device
First Claim
1. A storage element comprising:
- a first layer having a magnetization state of a first magnetic material;
a second layer having a fixed magnetization state of a second magnetic material;
an intermediate layer including a nonmagnetic material and being interposed between the first layer and the second layer;
wherein the first layer is configured to store information according to the magnetization state of the first magnetic material,wherein a magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer,wherein the storage element has a size of about 70 nmϕ
or less, and the first magnetic material includes a Co, Fe and B alloy having a Fe atomic % of at least 60, andwherein a ratio of Co and Fe in the first magnetic material is 7 to 3.
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Accused Products
Abstract
There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.
115 Citations
16 Claims
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1. A storage element comprising:
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a first layer having a magnetization state of a first magnetic material; a second layer having a fixed magnetization state of a second magnetic material; an intermediate layer including a nonmagnetic material and being interposed between the first layer and the second layer; wherein the first layer is configured to store information according to the magnetization state of the first magnetic material, wherein a magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer, wherein the storage element has a size of about 70 nmϕ
or less, and the first magnetic material includes a Co, Fe and B alloy having a Fe atomic % of at least 60, andwherein a ratio of Co and Fe in the first magnetic material is 7 to 3. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A memory device, comprising:
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an storage element that retains information through a magnetization state of a magnetic material; and two kinds of interconnects that intersect each other, wherein the storage element includes a first layer having a magnetization state of a first magnetic material; a second layer having a fixed magnetization state of a second magnetic material; and an intermediate layer including a nonmagnetic material and being interposed between the first layer and the second layer; wherein a magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer, wherein the storage element has a size of about 70 nmϕ
or less, and the first magnetic material includes a Co, Fe and B alloy having a Fe atomic % of at least 60, andwherein a ratio of Co and Fe in the first magnetic material is 7 to 3.
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Specification