Nanoparticle with plural functionalities, and method of forming the nanoparticle

• US 10,665,783 B2
• Filed: 06/27/2019
• Issued: 05/26/2020
• Est. Priority Date: 06/29/2016
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Cao, Qing, Cheng, Kangguo, Li, Zhengwen, Liu, Fei
• Primary Examiner(s): Maruf, Sheikh
• Application Number:
  US16/454,867
• Publication Number:
  US 20190319189A1
• Time in Patent Office: 334 Days
• Field of Search: 257401, 424489
• CPC Class Codes: A61K 9/143 with inorganic compounds
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: B82Y 5/00 Nanobiotechnology or nanomedicine, e.g. protein engineering or drug delivery
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02601 Nanoparticles fullerenes H10K85/211
• CPC Class Codes: H01L 21/7806 involving the separation of the active layers from a substrate
• CPC Class Codes: H10N 97/00 Electric solid-state thin-film or thick-film devices, not otherwise provided for

Abstract

A nanoparticle includes a cuboid base including a semiconductor material, and a plurality of surfaces formed on the base and including a plurality of functionalities, respectively.

Claims

1. A nanoparticle comprising:

a cuboid base comprising a semiconductor material; and

a plurality of surfaces formed on the cuboid base and including a plurality of functionalities, respectively, the plurality of surfaces comprising;

a first surface including a first layer formed on a first side of the cuboid base; and

a second surface including a second layer different than the first layer, the second layer being formed on a second side of the cuboid base and on a side of the first layer.

2. The nanoparticle of claim 1, wherein the first layer comprises a first functionality, and the second layer comprises a second functionality different from the first functionality.

3. The nanoparticle of claim 2, wherein the second functionality is different from the first functionality in at least one of a bonding property, an energy absorption property and a biodegradability property.

4. The nanoparticle of claim 1, wherein the plurality of surfaces further comprises a third surface including the semiconductor material.

5. A pharmaceutical comprising the nanoparticle of claim 1.

6. The nanoparticle of claim 4, wherein the first layer, comprises an insulator layer including a silicon nitride layer, and

wherein the second layer comprises a metal layer including a gold layer.

7. The nanoparticle of claim 4, wherein the metal layer is formed on the first side of the cuboid base and on the side of the insulator layer.

8. The nanoparticle of claim 4, wherein the plurality of surfaces further comprises a fourth surface formed opposite the second surface and including the metal layer.

9. The nanoparticle of claim 8, wherein the plurality of surfaces further comprises a fifth surface formed opposite the third surface and including the semiconductor material.

10. The nanoparticle of claim 9, wherein the plurality of surfaces further comprises a sixth surface formed opposite the first surface and including the semiconductor material.

11. The nanoparticle of claim 1, wherein the semiconductor material comprises one of silicon, germanium, silicon germanium, a group III-V semiconductor material and a group II-VI semiconductor material.

12. The nanoparticle of claim 1, wherein the cuboid base comprises one of a rectangular cuboid shape and a square cuboid shape.

13. The nanoparticle of claim 1, wherein a side of the cuboid base has a length in a range from 2 nm to 50 nm.

14. A nanoparticle comprising:

a cuboid base comprising a semiconductor material;

a first layer having a first functionality and formed on a first side of the cuboid base; and

a second layer having a second functionality different than the first functionality and formed on a second side of the cuboid base and on a side of the first layer.

15. The nanoparticle of claim 14, wherein the first layer comprises a functionality different from a functionality of the semiconductor material.

16. The nanoparticle of claim 14, wherein the second layer comprises a functionality different from the functionality of the semiconductor material.

17. The nanoparticle of claim 14, wherein the first layer comprises an insulator layer and the second layer comprises a metal layer.

18. The nanoparticle of claim 17, wherein the insulator layer comprises a silicon nitride layer and the metal layer comprises a gold layer.

19. A nanoparticle comprising:

a cuboid base comprising a semiconductor material;

a first surface comprising a first layer having a first functionality and formed on a first side of the cuboid base;

a second surface comprising a second layer having a second functionality different from the first functionality and formed on a second side of the cuboid base and on a side of the first layer;

a third surface comprising the semiconductor material;

a fourth surface formed opposite the second surface and including the second layer;

a fifth surface formed opposite the third surface and including the semiconductor material; and

a sixth surface formed opposite the first surface and including the semiconductor material.