Method for manufacturing laminate and method for manufacturing liquid discharge head

• US 10,669,628 B2
• Filed: 04/23/2018
• Issued: 06/02/2020
• Est. Priority Date: 04/28/2017
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Fukumoto, Yoshiyuki, Terasaki, Atsunori, Kanri, Ryoji
• Primary Examiner(s): Chen, Bret P
• Application Number:
  US15/960,375
• Publication Number:
  US 20180312971A1
• Time in Patent Office: 771 Days
• CPC Class Codes: B32B 15/092 comprising epoxy resins
• CPC Class Codes: B32B 15/20 comprising aluminium or copper B32B15/016 and B32B15/017 take precedence
• CPC Class Codes: B32B 2255/06 on metal layer
• CPC Class Codes: B32B 2255/20 Inorganic coating
• CPC Class Codes: B32B 2255/26 Polymeric coating
• CPC Class Codes: B32B 2255/28 Multiple coating on one surface
• CPC Class Codes: B32B 2307/714 Inert, i.e. inert to chemical degradation, corrosion
• CPC Class Codes: B32B 27/08 of synthetic resin
• CPC Class Codes: B32B 27/38 comprising epoxy resins
• CPC Class Codes: B32B 3/266 characterised by an apertured layer, the apertures going through the whole thickness of the layer, e.g. expanded metal, perforated layer, slit layer regular cells B32B3/12
• CPC Class Codes: B32B 3/30 characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs apertured layer B32B3/266; layer with cavities or internal voids B32B3/26
• CPC Class Codes: B32B 7/12 using interposed adhesives or interposed materials with bonding properties
• CPC Class Codes: B32B 9/04 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material next to a glass layer B32B17/06; layered products with at least two ceramic layers composed mainly of ceramic B32B18/00
• CPC Class Codes: B32B 9/041 of metal
• CPC Class Codes: B32B 9/045 of synthetic resin
• CPC Class Codes: B41J 2/14145 Structure of the manifold
• CPC Class Codes: B41J 2/1603 of the front shooter type
• CPC Class Codes: B41J 2/1623 bonding and adhesion
• CPC Class Codes: B41J 2/1628 dry etching
• CPC Class Codes: B41J 2/1629 wet etching
• CPC Class Codes: B41J 2/1631 : photolithography
• CPC Class Codes: B41J 2/1642 : thin film formation by CVD [chemical vapor deposition]
• CPC Class Codes: B41J 2/1645 : thin film formation by spincoating
• CPC Class Codes: C23C 16/40 : Oxides
• CPC Class Codes: C23C 16/401 : containing silicon
• CPC Class Codes: C23C 16/405 : of refractory metals or yttrium
• CPC Class Codes: C23C 16/45525 : Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45555 : applied in non-semiconductor technology
• CPC Class Codes: C23C 16/56 : After-treatment

Abstract

A method for manufacturing a laminate has a process of forming a film on a substrate by an atomic layer deposition method and a process of forming a layer containing a compound polymerizable with acid and an acid generator, and then curing the layer to form resin layer on the film, in which the nitrogen atom atomic composition ratio of the film is 2.5% or less.

Claims

1. A method for manufacturing a liquid discharge head having:

a discharge port discharging liquid; and

an element generating energy to be utilized for discharging the liquid, wherein

the liquid discharge head has a laminate having a substrate, a film formed by an atomic layer deposition method on the substrate, and a resin layer formed on the film, and

the laminate is formed by a method for manufacturing the laminate including forming the film on the substrate by the atomic layer deposition method, and forming a layer containing a compound polymerizable with acid and an acid generator, and then curing the layer to form the resin layer on the film, in which a nitrogen atom atomic composition ratio of the film is 2.5% or less, the nitrogen atomic composition ratio being a number ratio of nitrogen atoms in the film to all atoms in the film except for hydrogen atoms.

2. The method for manufacturing a liquid discharge head according to claim 1, wherein

a compound containing an element selected from the group consisting of Ta, Zr, Hf, Nb, Si, and Ti is used as a precursor in the formation of the film by the atomic layer deposition method.

3. The method for manufacturing a liquid discharge head according to claim 1, wherein

the formation of the film by the atomic layer deposition method includes generating a reaction byproduct by desorption from the precursor;

and

an acid dissociation constant of the reaction byproduct is 3 or less.

4. The method for manufacturing a liquid discharge head according to claim 1, wherein

a compound having a halogeno group is used as the precursor in the formation of the film by the atomic layer deposition method.

5. The method for manufacturing a liquid discharge head according to claim 4, wherein

the compound having the halogeno group is a compound selected from the group consisting of titanium tetrachloride, silicon tetrachloride, tantalum pentachloride, hafnium tetrachloride, zirconium tetrachloride, niobium pentachloride, disilicon hexachloride, tetrachlorodialkyldisilane, dichlorotetraalkyldisilane, and bistrichlorosilylalkane.

6. The method for manufacturing a liquid discharge head according to claim 1, wherein

the formation of the film by the atomic layer deposition method is performed at a temperature of 200°

C. or less.

7. The method for manufacturing a liquid discharge head according to claim 1, wherein

the substrate has a through-hole, and

the resin layer is a resin structure having an opening communicating with the through-hole.

8. The method for manufacturing a liquid discharge head according to claim 1, wherein

the element is provided on a front surface of the substrate, and the resin layer is provided on a rear surface of the substrate.

9. The method for manufacturing a liquid discharge head according to claim 1, wherein

the film is a liquid resistant film.

10. The method for manufacturing a liquid discharge head according to claim 1, wherein

the film comprises an oxide, a carbide, an oxynitride, or acid carbide of an element selected from the group consisting of Ta, Zr, Hf, Nb, Si, and Ti.