Emitting film with improved light-out coupling

• US 10,670,229 B2
• Filed: 06/25/2015
• Issued: 06/02/2020
• Est. Priority Date: 06/26/2014
• Status: Expired due to Fees

• Current Assignee: Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. (Hebrew University of Jerusalem)
• Original Assignee: Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. (Hebrew University of Jerusalem)
• Inventors: Banin, Uri, Shaviv, Ehud, Glozman, Denis, Arbell, Hagai
• Primary Examiner(s): Dzierzynski, Evan P
• Application Number:
  US15/321,091
• Publication Number:
  US 20170153007A1
• Time in Patent Office: 1,804 Days
• CPC Class Codes: F21V 11/00 Screens not covered by groups F21V1/00, F21V3/00, F21V7/00 or F21V9/00 characterised by cooling arrangements F21V29/502
• CPC Class Codes: F21V 9/14 for producing polarised light
• CPC Class Codes: G02B 1/14 Protective coatings, e.g. hard coatings
• CPC Class Codes: G02B 2207/101 Nanooptics
• CPC Class Codes: G02B 5/0247 by means of voids or pores
• CPC Class Codes: G02B 5/0268 characterized by the fabrication or manufacturing method
• CPC Class Codes: G02B 6/0003 the light guides being doped with fluorescent agents
• CPC Class Codes: G02B 6/0041 provided in the bulk of the light guide
• CPC Class Codes: G02B 6/0043 provided on the surface of the light guide
• CPC Class Codes: G02B 6/0053 Prismatic sheet or layer; Brightness enhancement element, sheet or layer
• CPC Class Codes: G02B 6/0055 Reflecting element, sheet or layer
• CPC Class Codes: G02F 1/133606 including a specially adapted diffusing, scattering or light controlling members
• CPC Class Codes: G02F 1/133611 including means for improving the brightness uniformity
• CPC Class Codes: G02F 1/133614 using photoluminescence, e.g. phosphors illuminated by UV or blue light
• CPC Class Codes: G02F 2/02 Frequency-changing of light, e.g. by quantum counters
• CPC Class Codes: G02F 2202/10 semiconductor
• CPC Class Codes: G02F 2202/108 quantum wells
• CPC Class Codes: G02F 2203/03 scattering

Abstract

The present invention provides an optically active structure and the use thereof in a backlight unit. The optically active structure comprises a plurality of optically active particles configured to emit light of one or more predetermined wavelength range in response to pumping energy, and a plurality of light scattering elements. The plurality of light scattering elements comprises optically transparent void regions, such as void regions surrounding filler particles.

Claims

1. An optically active structure, comprising a light emitting layer defined by a common matrix, wherein the common matrix has embedded therein a plurality of optically active semiconductor nanoparticles configured to emit light of one or more predetermined wavelength range in response to pumping energy, and a plurality of light scattering elements;

wherein each of said plurality of light scattering elements is formed by an optically transparent void region surrounding a filler particle, said filler particles also embedding some of the optically active semiconductor nanoparticles therewithin;

such that each of the light scattering elements scatters light originated by emission of the optically active semiconductor nanoparticles surrounded by the respective void regions.

2. The optically active structure of claim 1, wherein said filler particles comprise optically transparent filler particles, configured for being optically transparent for at least wavelength range of the emitted light.

3. The optically active structure of claim 2, wherein said pumping energy comprises optical pumping with at least one excitation wavelength range, said optically transparent filler particles being transparent to said at least one excitation wavelength range.

4. The optically active structure of claim 2, wherein said optically transparent filler particles are configured with absorption of below 20% of the corresponding wavelength range.

5. The optically active structure of claim 1, where said optically active semiconductor nanoparticles being embedded within the filler particles comprise rod shaped optically active nanoparticles aligned along a predetermined axis.

6. The optically active structure of claim 1, wherein said optically emitting semiconductor nanoparticles comprise at least one semiconducting material selected from the group consisting of:

CdS, CdSe, CdTe, ZnS, CdZnS, ZnSe, ZnSeS, ZnTe, ZnO, GaAs, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, InGaP, AlSb, Cu₂S, Cu₂Se, CuInS₂, CuInSe₂, Cu₂(ZnSn)S₄, and Cu₂(InGa)S₄.

7. The optically active structure of claim 1, where said optically active semiconductor nanoparticles in the common matrix and in the filler comprise anisotropic semiconductor nanoparticles, having a dimension along one axis being longer with respect to a perpendicular axis thereof.

8. The optically active structure of claim 7, wherein said anisotropic semiconductor nanoparticles are configured as dot-in-rod or rod-in-rod nanostructures.

9. The optically active structure of claim 7, wherein said anisotropic semiconductor nanoparticles are configured as nanorods, said nanorods being aligned along a predetermined axis to thereby emit light having a selected polarization orientation.

10. The optically active structure of claim 1, wherein said void regions are anisotropic regions having a dimension along one axis longer with respect to a dimension along at least one other axis.

11. The optically active structure of claim 10, wherein said anisotropic voids are aligned such that the longer axis thereof is within a plane defined by the optically active structure.

12. The optically active structure of claim 10, where said optically active semiconductor nanoparticles in the common matrix and/or in the filler comprise semiconductor nanorods, said semiconductor nanorods and said anisotropic voids being aligned along a common axis.

13. The optically active structure of claim 1, wherein the concentration of said plurality of scattering elements is selected in accordance with thickness of the optically active structure to provide a haze level between 60% and 95% to the optically active structure.

14. The optically active structure of claim 13, wherein the concentration of said plurality of scattering elements is selected to provide a haze level between 80% and 95%.

15. The optically active structure of claim 13, wherein the concentration of said plurality of scattering elements is selected to provide a haze level between 87% and 95%.

16. The optically active structure of claim 1, further comprising at least one barrier layer configured for reducing interaction of at least one of oxygen and moisture with said optically active structure.

17. A method for producing an optically active structure according to claim 1, the method comprising providing a liquid solution comprising a mixture of a polymeric material to form the common matrix, a plurality of optically active semiconductor nanoparticles of one or more predetermined size and material composition, and a plurality of optically transparent filler particles having optically active semiconductor nanoparticles embedded therein;

drying and stretching said solution along at least one axis to a predetermined length variation ratio to thereby form elongated void regions around said optically transparent filler particles within said common matrix.

18. The method of claim 17, wherein said optically active semiconductor nanoparticles are rod shaped semiconductor nanoparticles having a predetermined length ratio being such that said stretching aligns said rod shaped semiconductor nanoparticles along said predetermined axis.

19. The method of claim 17, further comprising, selecting said polymeric material and said optically transparent filler particles as having a first and second glass-liquid transition temperatures (T_g) respectively, said first glass-liquid transition temperatures being lower than the second glass-liquid transition temperatures.

20. The method of claim 19, wherein said stretching is performed at a temperature being between said first and second glass-liquid transition temperature.

21. The optically active structure of claim 1, wherein the optically active semiconductor nanoparticles in the common matrix comprise optically emitting semiconductor nanoparticles.

22. The optically active structure of claim 1, wherein the optically active semiconductor nanoparticles in the filler comprise optically emitting semiconductor nanoparticles.

23. A backlight unit configured for use in a display device, wherein the backlight unit comprises an optically active film formed by a common matrix, wherein the common matrix comprises optically active semiconductor nanoparticles configured to emit light of one or more predetermined wavelength range in response to pumping energy, and a plurality of light scattering elements formed by optically transparent material filler particles surrounded with a void region;

wherein said optically active semiconductor nanoparticles comprise optically active semiconductor nanoparticles embedded within said common matrix and optically active semiconductor nanoparticles embedded in said filler particles.

24. The backlight unit of claim 23, where said optically active semiconductor nanoparticles in the common matrix and in the filler comprise a plurality of optically active rod shaped semiconductor nanoparticles aligned along a predetermined axis.

25. The backlight unit of claim 23, wherein said light scattering elements comprise anisotropic void regions, said anisotropic void regions being aligned along a predetermined axis.