Semiconductor test device and manufacturing method thereof
First Claim
1. A semiconductor test device for measuring a contact resistance, comprising:
- first fin structures, upper portions of the first fin structures protruding from an isolation insulating layer;
epitaxial layers formed on the upper portions of the first fin structures, respectively;
first conductive layers formed on the epitaxial layers, respectively;
a first contact layer disposed on the first conductive layers at a first point;
a second contact layer disposed on the first conductive layers at a second point apart from the first point;
a first pad coupled to the first contact layer via a first wiring; and
a second pad coupled to the second contact layer via a second wiring,wherein the semiconductor test device is configured to measure the contact resistance between the first contact layer and the first fin structures by applying a current between the first pad and the second pad,wherein the first conductive layers fully cover a top and sides of the epitaxial layers, respectively, and are in direct contact with the isolation insulating layer,wherein the first fin structures include a left-most fin structure and a right-most fin structure, andwherein a dielectric layer disposed on the isolation insulating layer is in direct contact with a top of upper portions of the left-most fin structure and the right-most fin structure.
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Abstract
A semiconductor test device for measuring a contact resistance includes: first fin structures, upper portions of the first fin structures protruding from an isolation insulating layer; epitaxial layers formed on the upper portions of the first fin structures, respectively; first conductive layers formed on the epitaxial layers, respectively; a first contact layer disposed on the first conductive layers at a first point; a second contact layer disposed on the first conductive layers at a second point apart from the first point; a first pad coupled to the first contact layer via a first wiring; and a second pad coupled to the second contact layer via a second wiring. The semiconductor test device is configured to measure the contact resistance between the first contact layer and the first fin structures by applying a current between the first pad and the second pad.
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Citations
19 Claims
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1. A semiconductor test device for measuring a contact resistance, comprising:
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first fin structures, upper portions of the first fin structures protruding from an isolation insulating layer; epitaxial layers formed on the upper portions of the first fin structures, respectively; first conductive layers formed on the epitaxial layers, respectively; a first contact layer disposed on the first conductive layers at a first point; a second contact layer disposed on the first conductive layers at a second point apart from the first point; a first pad coupled to the first contact layer via a first wiring; and a second pad coupled to the second contact layer via a second wiring, wherein the semiconductor test device is configured to measure the contact resistance between the first contact layer and the first fin structures by applying a current between the first pad and the second pad, wherein the first conductive layers fully cover a top and sides of the epitaxial layers, respectively, and are in direct contact with the isolation insulating layer, wherein the first fin structures include a left-most fin structure and a right-most fin structure, and wherein a dielectric layer disposed on the isolation insulating layer is in direct contact with a top of upper portions of the left-most fin structure and the right-most fin structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of measuring a contact resistance using a semiconductor test device, the method including:
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providing first fin structures, upper portions of the first fin structures protruding from an isolation insulating layer; providing epitaxial layers formed on the upper portions of the first fin structures, respectively; providing first conductive layers formed on the epitaxial layers, respectively; providing a first contact layer disposed on the first conductive layers at a first point; providing a second contact layer disposed on the first conductive layers at a second point apart from the first point, wherein the first conductive layers fully cover a top and sides of the epitaxial layers, respectively, and are in direct contact with the isolation insulating layer; providing a first pad coupled to the first contact layer via a first wiring; providing a second pad coupled to the second contact layer via a second wiring; applying a current between the first pad and the second pad so that the current flows through the first fin structures; measuring a voltage between the first pad and bottoms of the first fin structures at the first point; and calculating the contact resistance between the first contact layer and the first fin structures, wherein the first fin structures include a left-most fin structure and a right-most fin structure, and wherein a dielectric layer disposed on the isolation insulating layer is in direct contact with a top of upper portions of the left-most fin structure and the right-most fin structure. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor test device for measuring a contact resistance, comprising:
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first fin structures, upper portions of the first fin structures protruding from an isolation insulating layer; epitaxial layers formed on the upper portions of the first fin structures, respectively; first conductive layers formed on the epitaxial layers, respectively; a first contact layer disposed on the first conductive layers at a first point; a first pad coupled to the first contact layer via a first wiring; second fin structures disposed adjacent to the first fin structures, upper portions of the second fin structures protruding from the isolation insulating layer, the epitaxial layers being formed on the upper portions of the second fin structures and the first conductive layers being formed on the epitaxial layers, respectively; a second contact layer disposed on the first conductive layers of the second fin structure at a second point; and a second pad coupled to the second contact layer via a second wiring, wherein a third pad is electrically connected to the first fin structure at the first point via a substrate, wherein the first conductive layers fully cover a top and sides of the epitaxial layers, respectively, and are in direct contact with the isolation insulating layer, wherein the first fin structures include a left-most fin structure and a right-most fin structure, and wherein a dielectric layer disposed on the isolation insulating layer is in direct contact with a top of upper portions of the left-most fin structure and the right-most fin structure. - View Dependent Claims (19)
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Specification