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Semiconductor test device and manufacturing method thereof

  • US 10,670,641 B2
  • Filed: 08/22/2017
  • Issued: 06/02/2020
  • Est. Priority Date: 08/22/2017
  • Status: Active Grant
First Claim
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1. A semiconductor test device for measuring a contact resistance, comprising:

  • first fin structures, upper portions of the first fin structures protruding from an isolation insulating layer;

    epitaxial layers formed on the upper portions of the first fin structures, respectively;

    first conductive layers formed on the epitaxial layers, respectively;

    a first contact layer disposed on the first conductive layers at a first point;

    a second contact layer disposed on the first conductive layers at a second point apart from the first point;

    a first pad coupled to the first contact layer via a first wiring; and

    a second pad coupled to the second contact layer via a second wiring,wherein the semiconductor test device is configured to measure the contact resistance between the first contact layer and the first fin structures by applying a current between the first pad and the second pad,wherein the first conductive layers fully cover a top and sides of the epitaxial layers, respectively, and are in direct contact with the isolation insulating layer,wherein the first fin structures include a left-most fin structure and a right-most fin structure, andwherein a dielectric layer disposed on the isolation insulating layer is in direct contact with a top of upper portions of the left-most fin structure and the right-most fin structure.

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