Maskless exposure method, maskless exposure apparatus and method of manufacturing a semiconductor device using the same
First Claim
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1. A maskless exposure method, comprising:
- generating exposure data based on a detected height difference between a first height and a second height in an object layer;
spatially modulating a light output from a light source into a pattern beam having a mask pattern;
condensing the modulated pattern beam into a first group of spot beams having a first focal position on a Z-axis substantially perpendicular to an exposure surface of the object layer, and a second group of spot beams having a second focal position different from the first focal position; and
scanning a first portion of the object layer having the first height with the first group of spot beams according to the exposure data, and a second portion of the object layer having the second height, which is different from the first height, with the second group of spot beams according to the exposure data.
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Abstract
A maskless exposure method includes spatially modulating a light output from a light source into a pattern beam having a mask pattern, condensing the modulated pattern beam into a first group of spot beams having a first focal position on a Z-axis substantially perpendicular to an exposure surface of an object layer, and into a second group of spot beams having a second focal position different from the first focal position, and scanning the object layer with the first and second groups of spot beams. The object layer has a first height and a second height different from the first height.
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Citations
20 Claims
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1. A maskless exposure method, comprising:
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generating exposure data based on a detected height difference between a first height and a second height in an object layer; spatially modulating a light output from a light source into a pattern beam having a mask pattern; condensing the modulated pattern beam into a first group of spot beams having a first focal position on a Z-axis substantially perpendicular to an exposure surface of the object layer, and a second group of spot beams having a second focal position different from the first focal position; and scanning a first portion of the object layer having the first height with the first group of spot beams according to the exposure data, and a second portion of the object layer having the second height, which is different from the first height, with the second group of spot beams according to the exposure data. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing a semiconductor device, comprising:
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forming an object layer on a substrate, wherein the object layer has a first height and a second height different from the first height; detecting a height difference between the first height and the second height; generating exposure data based on the detected height difference; spatially modulating a light output from a light source into a pattern beam having a mask pattern; condensing the modulated pattern beam into a first group of spot beams having a first focal position on a Z-axis substantially perpendicular to an exposure surface of the object layer, and a second group of spot beams having a second focal position different from the first focal position; and scanning a first portion of the object layer having the first height with the first group of spot beams according to the exposure data, and a second portion of the object layer having the second height with the second group of spot beams according to the exposure data. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of manufacturing a semiconductor device, comprising:
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forming an object layer on a substrate, wherein the object layer has a first height and a second height different from the first height; detecting a height difference between the first height and the second height; spatially modulating a light output from a light source into a pattern beam having a mask pattern; condensing the modulated pattern beam into a first group of spot beams having a first focal position on a Z-axis substantially perpendicular to an exposure surface of the object layer, and a second group of spot beams having a second focal position different from the first focal position; and scanning the exposure surface with the first group of spot beams and the second group of spot beams within a scan exposure width based on the detected height difference.
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Specification