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Method of modeling a mask by taking into account of mask pattern edge interaction

  • US 10,671,786 B2
  • Filed: 05/10/2017
  • Issued: 06/02/2020
  • Est. Priority Date: 11/29/2016
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • receiving a mask layout that includes one or more non-Manhattan patterns, wherein the one or more non-Manhattan patterns includes two or more curvilinear edges, wherein the mask layout includes a plurality of pixels, and wherein a subset of the pixels are edge pixels that are located on the two or more curvilinear edges;

    applying an interaction-free mask model to the mask layout;

    applying an edge interaction model to at least the one or more non-Manhattan patterns of the mask layout, the edge interaction model describing an influence exerted on each of the plurality of pixels due to a plurality of combinations of the edge pixels of the two or more curvilinear edges interacting with one another;

    applying a thin mask model to the mask layout; and

    determining a near field based on the applying of the interaction-free mask model, the applying of the edge interaction model, and the applying of the thin mask model.

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