Semiconductor device and method for manufacturing the same
First Claim
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1. A semiconductor device comprising:
- a first insulating film comprising a first region, a second region, and a third region between the first region and the second region;
a multilayer film comprising;
a first oxide semiconductor film over and in contact with the third region of the first insulating film and not in contact with the first region and the second region of the first insulating film, wherein the first oxide semiconductor film comprises indium, gallium, and zinc; and
a second oxide semiconductor film over and in contact with the first oxide semiconductor film, wherein the second oxide semiconductor film comprises indium, gallium, and zinc;
a source electrode and a drain electrode each over the second oxide semiconductor film;
a second insulating film over the second oxide semiconductor film; and
a gate electrode over the second oxide semiconductor film with the second insulating film interposed therebetween,wherein the third region of the first insulating film has a larger thickness than the first region and the second region of the first insulating film.
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Abstract
A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
222 Citations
20 Claims
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1. A semiconductor device comprising:
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a first insulating film comprising a first region, a second region, and a third region between the first region and the second region; a multilayer film comprising; a first oxide semiconductor film over and in contact with the third region of the first insulating film and not in contact with the first region and the second region of the first insulating film, wherein the first oxide semiconductor film comprises indium, gallium, and zinc; and a second oxide semiconductor film over and in contact with the first oxide semiconductor film, wherein the second oxide semiconductor film comprises indium, gallium, and zinc; a source electrode and a drain electrode each over the second oxide semiconductor film; a second insulating film over the second oxide semiconductor film; and a gate electrode over the second oxide semiconductor film with the second insulating film interposed therebetween, wherein the third region of the first insulating film has a larger thickness than the first region and the second region of the first insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a first insulating film comprising a first region, a second region, and a third region between the first region and the second region; a multilayer film comprising; a first oxide semiconductor film over and in contact with the third region of the first insulating film and not in contact with the first region and the second region of the first insulating film, wherein the first oxide semiconductor film comprises indium, gallium, and zinc; a second oxide semiconductor film over and in contact with the first oxide semiconductor film, wherein the second oxide semiconductor film comprises indium, gallium, and zinc; and a third oxide semiconductor film over and in contact with the second oxide semiconductor film, wherein the second oxide semiconductor film comprises indium, gallium, and zinc; a source electrode and a drain electrode each over the second oxide semiconductor film; a second insulating film over the third oxide semiconductor film; and a gate electrode over the third oxide semiconductor film with the second insulating film interposed therebetween, wherein the third region of the first insulating film has a larger thickness than the first region and the second region of the first insulating film. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Suzawa, Hideomi, Tanaka, Tetsuhiro, Watanabe, Hirokazu, Sato, Yuhei, Yamane, Yasumasa, Matsubayashi, Daisuke
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Primary Examiner(s)Han, Jonathan
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Application NumberUS16/024,967Publication NumberTime in Patent Office701 DaysField of Search257 43, 257 57, 257 59, 257E29296, 257E21413, 257E21, 257703, 257E27111, 257E27112, 438104, 438197, 438149, 438479US Class CurrentCPC Class CodesH01L 29/45 Ohmic electrodesH01L 29/66969 of devices having semicondu...H01L 29/78618 characterised by the drain ...H01L 29/7869 having a semiconductor body...H01L 29/78696 characterised by the struct...
