Light-emitting device and method for manufacturing the same

• US 10,672,915 B2
• Filed: 07/12/2016
• Issued: 06/02/2020
• Est. Priority Date: 09/04/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Sakata, Junichiro, Sakakura, Masayuki, Oikawa, Yoshiaki, Okazaki, Kenichi, Maruyama, Hotaka
• Primary Examiner(s): Sandvik, Benjamin P
• Application Number:
  US15/207,923
• Publication Number:
  US 20160322510A1
• Time in Patent Office: 1,421 Days
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/247 Amorphous materials
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

Claims

1. A light emitting device comprising:

a substrate;

a transistor comprising;

a first conductive layer over the substrate;

a first oxide insulating layer over the first conductive layer;

an oxide semiconductor layer over the first oxide insulating layer;

a second oxide insulating layer over the oxide semiconductor layer; and

a second conductive layer and a third conductive layer electrically connected to the oxide semiconductor layer;

a first insulating layer over the second and third conductive layers, the first insulating layer comprising a contact hole;

a color filter layer over the first insulating layer;

a second insulating layer over the color filter layer;

a partition over the second insulating layer; and

a pixel electrode electrically connected to one of the second and third conductive layers through the contact hole,

wherein the pixel electrode comprises a depression portion overlapping with the contact hole,

wherein the depression portion and the partition overlap each other without the second insulating layer interposed between the depression portion and the partition,

wherein an end portion of the second insulating layer does not overlap with the contact hole,

wherein the oxide semiconductor layer comprises a channel formation region, a first region, and a second region,

wherein the first region and the second region are in contact with the second conductive layer and the third conductive layer, respectively,

wherein the first region has resistance lower than resistance of the channel formation region,

wherein the second region has resistance lower than resistance of the channel formation region,

wherein each of the first conductive layer, the second conductive layer, and the third conductive layer contains titanium,

wherein the second insulating layer is configured to reduce roughness of the color filter layer, and

wherein the color filter layer does not overlap with the channel formation region.

2. The light emitting device according to claim 1, wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

3. The light emitting device according to claim 1, wherein the oxide semiconductor layer comprises indium, tin, and zinc.

4. The light emitting device according to claim 1, wherein the oxide semiconductor layer comprises a region being in an oxygen-excess state.

5. The light emitting device according to claim 1, wherein each of the first conductive layer, the second conductive layer, and the third conductive layer further contains molybdenum.

6. The light emitting device according to claim 1, wherein each of the second conductive layer and the third conductive layer is configured to a source electrode or a drain electrode.

7. The light emitting device according to claim 1, wherein emission color of a light emitting element comprising the pixel electrode is white.

8. The light emitting device according to claim 1,

wherein a light emitting element comprising the pixel electrode comprises a first light emitting unit and a second light emitting unit, and

wherein a charge generation layer is provided between the first light emitting unit and the second light emitting unit.

9. The light emitting device according to claim 1,

wherein a light emitting element comprising the pixel electrode comprises a first light emitting unit and a second light emitting unit,

wherein emission color of the first light emitting unit is blue, and

wherein emission color of the second light emitting unit is yellow.

10. The light emitting device according to claim 1, wherein each of the color filter layer and a light emitting element comprising the pixel electrode is included in a display portion.

11. A light emitting device comprising:

a pixel portion comprising;

a first transistor comprising a first oxide semiconductor layer;

a first protective layer over the first transistor, the first protective layer comprising a contact hole;

a color filter layer over the first protective layer;

a second protective layer over the color filter layer;

an insulating layer over the second protective layer;

a partition of the insulating layer; and

a pixel electrode electrically connected to the first transistor through the contact hole; and

a circuit portion comprising;

a second transistor comprising a second oxide semiconductor layer,

wherein the pixel electrode comprises a depression portion overlapping with the contact hole,

wherein the depression portion and the partition overlap each other without the insulating layer interposed between the depression portion and the partition,

wherein an end portion of the insulating layer does not overlap with the contact hole,

wherein the first oxide semiconductor layer comprises a first channel formation region, a first region, and a second region,

wherein the first region and the second region are in contact with a first source electrode of the first transistor and a first drain electrode of the first transistor, respectively,

wherein the first region has resistance lower than resistance of the first channel formation region,

wherein the second region has resistance lower than resistance of the first channel formation region,

wherein the second oxide semiconductor layer comprises a second channel formation region, a third region, and a fourth region,

wherein the third region and the fourth region are in contact with a second source electrode of the second transistor and a second drain electrode of the second transistor, respectively,

wherein the third region has resistance lower than resistance of the second channel formation region,

wherein the fourth region has resistance lower than resistance of the second channel formation region, and

wherein the color filter layer does not overlap with the first channel formation region.

12. The light emitting device according to claim 11, wherein the first and second oxide semiconductor layers comprise indium, gallium, and zinc.

13. The light emitting device according to claim 11, wherein the first and second oxide semiconductor layers comprise indium, tin, and zinc.

14. The light emitting device according to claim 11, wherein the first and second oxide semiconductor layers comprise a region being in an oxygen-excess state.

15. The light emitting device according to claim 11, wherein each of the first source, first drain, second source, and second drain electrodes contains titanium.

16. The light emitting device according to claim 15, wherein each of the first source, first drain, second source, and second drain electrodes further contains molybdenum.

17. The light emitting device according to claim 11, wherein emission color of a light emitting element comprising the pixel electrode is white.

18. The light emitting device according to claim 11,

wherein a light emitting element comprising the pixel electrode comprises a first light emitting unit and a second light emitting unit, and

wherein a charge generation layer is provided between the first light emitting unit and the second light emitting unit.

19. The light emitting device according to claim 11,

wherein a light emitting element comprising the pixel electrode comprises a first light emitting unit and a second light emitting unit,

wherein emission color of the first light emitting unit is blue, and

wherein emission color of the second light emitting unit is yellow.

20. The light emitting device according to claim 11, wherein each of the color filter layer and a light emitting element comprising the pixel electrode is included in a display portion.