Light emitting element

• US 10,672,951 B2
• Filed: 12/15/2017
• Issued: 06/02/2020
• Est. Priority Date: 07/01/2014
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Suh, Duk Il, Kim, Ye Seul, Kim, Kyoung Wan, Woo, Sang Won, Kim, Ji Hye
• Primary Examiner(s): Liu, Benjamin T
• Application Number:
  US15/843,847
• Publication Number:
  US 20180166608A1
• Time in Patent Office: 900 Days
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48453 of the interface with the bonding area
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.

Claims

1. A light emitting device comprising:

a substrate;

a first semiconductor layer formed over the substrate;

a mesa including an active layer formed over the first semiconductor layer and exposing a portion of the first semiconductor layer and

a second semiconductor layer formed over the active layer;

an electrode formed over a first region of the second semiconductor layer;

an insulation layer formed over a second region of the second semiconductor layer and extended to contact the portion of the first semiconductor layer, the insulation layer having a portion located on a sidewall of the mesa and having a varying width along the sidewall of the mesa;

a first pad formed over the insulation layer and electrically coupled to the first semiconductor layer;

a second pad formed over the electrode and electrically coupled to the second semiconductor layer; and

a first electrode extension extended from the first pad, and

a pad-current blocking layer disposed between the second pad and the second semiconductor layer,

wherein the insulation layer includes a portion that extends under the first electrode extension, the portion of the insulation layer has a greater width than a width of the first electrode extension,

the portion of the insulation under the first electrode extension exposes a portion of a sidewall of mesa, and

wherein the electrode includes a first opening disposed on the pad-current blocking layer and the pad-current blocking layer includes a second opening exposing the second conductive type semiconductor layer and disposed in the first opening, the second pad contacting the second conductive type semiconductor layer through the second opening, and an upper surface of the second pad comprises a first depression disposed to correspond to the first opening and a second depression disposed to correspond to the second opening.

2. The light emitting device of claim 1, wherein the insulation layer has a greater width than a width of the first pad.

3. The light emitting device of claim 1, wherein a portion of the insulation layer disposed under the first pad has a width greater than the portion of the insulation layer disposed under the first electrode extension.

4. The light emitting device of claim 1, wherein the insulation layer covers a side surface of the active layer and the second semiconductor layer.

5. The light emitting device of claim 1, wherein a portion of the insulation layer disposed under the first pad is separated from the electrode by a predetermined distance.

6. The light emitting device of claim 1, wherein a portion of the insulation layer disposed under the first pad partially covers a side surface and an upper surface of the electrode.

7. The light emitting device of claim 1, wherein the insulation layer is separated from the electrode.

8. A light emitting device comprising:

a substrate having a first to fourth side surfaces, the first side surface opposite to the third side surface and the second side surface opposite to the fourth side surface;

a light emitting structure formed over the substrate and including a first semiconductor layer, an active layer and a second semiconductor layer;

an electrode formed over the second semiconductor layer and electrically contacting the second semiconductor layer;

a first pad formed over the light emitting structure and disposed closer to the first side surface than the third side surface, the first pad electrically contacting the first semiconductor layer;

a second pad formed over the light emitting structure and disposed closer to the third side surface than the first side surface, the second pad electrically contacting the electrode;

a first electrode extension extended from the first pad toward the third side surface;

a second electrode extension extended from the second pad toward the first side surface; and

an insulation layer formed between the first pad and the second semiconductor layer and extended to contact the first semiconductor layer, wherein the light emitting device further wherein the light emitting device further comprises a pad-current blocking layer disposed between the second pad and the second semiconductor layer, wherein the electrode includes a first opening disposed on the pad-current blocking layer and the pad-current blocking layer includes a second opening exposing the second conductive type semiconductor layer and disposed in the first opening, the second pad contacting the second conductive type semiconductor layer through the second opening, and an upper surface of the second pad comprises a first depression disposed to correspond to the first opening and a second depression disposed to correspond to the second opening.

9. The light emitting device of claim 8, wherein the insulation layer includes openings at constant intervals along the second side surface, the openings exposing the first semiconductor layer.

10. The light emitting device of claim 8, wherein the insulation layer extends under the first electrode extension.

11. The light emitting device of claim 10, wherein the insulation layer disposed under the first electrode extension has a greater width than a width of the first electrode extension.

12. The light emitting device of claim 10, wherein a portion of the insulation layer disposed under the first pad has a width greater than the insulation layer disposed under the first electrode extension.

13. The light emitting device of claim 10, wherein the second electrode extension has an end portion with a width greater than an average width of the second electrode extension.

14. The light emitting device of claim 8, wherein the insulation layer has a greater width than a width of the first pad.

15. The light emitting device of claim 8, wherein the light emitting structure is structured to expose the first semiconductor layer through a groove formed at one side of the light emitting structure.

16. The light emitting device of claim 15, wherein the first pad is without a direct electrical connection with the first semiconductor layer and electrically contacts the first semiconductor layer through the first electrode extension.

17. The light emitting device of claim 15, wherein the first electrode extension includes a first portion electrically contacting the first semiconductor layer and a second portion insulated from the first semiconductor layer.