Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module

• US 10,672,952 B2
• Filed: 07/15/2019
• Issued: 06/02/2020
• Est. Priority Date: 06/28/2012
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Chae, Jong Hyeon, Jang, Jong Min, Roh, Won Young, Suh, Dae Woong, Kang, Min Woo, Lee, Joon Sub, Kim, Hyun A.
• Primary Examiner(s): Coleman, William
• Application Number:
  US16/511,921
• Publication Number:
  US 20190341527A1
• Time in Patent Office: 323 Days
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

Claims

1. A light emitting diode (LED) comprising:

a light emitting structure including a first conducive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first and second conductive type semiconductor layers and operable to emit light in response to an electrical current through the light emitting structure;

a reflection structure disposed on the second conductive type semiconductor layer and including a metal and configured to reflect light emitted by the light emitting structure;

an insulation layer disposed over the second conductive type semiconductor layer; and

a barrier layer disposed over the second conductive type semiconductor layer and the reflection structure, the barrier layer structured to include conductive materials and to prevent a diffusion of the metal in the reflection structure.

2. The LED of claim 1, wherein the insulation layer covers an entire surface of the barrier layer and includes:

a first portion in which a shape of the insulation layer is non-conforming to a shape of the barrier layer located under the first portion; and

a second portion in which a shape of the insulation layer is conforming to a shape of the barrier layer located under the second portion.

3. The LED of claim 1, wherein the insulation layer covers a portion of the barrier layer and includes:

a first portion in which a shape of the insulation layer is non-conforming to a shape of the barrier layer located under the first portion; and

a second portion in which a shape of the insulation layer is conforming to a shape of the barrier layer located under the second portion.

4. The LED of claim 1, wherein the reflection structure further includes an ohmic contact layer in an electrical contact with the second semiconductor layer.

5. The LED of claim 1, wherein a first thickness of the barrier layer over the reflection structure is different from a second thickness of the barrier layer over the second conductive type semiconductor layer.

6. The LED of claim 3, wherein a thickness of the insulation layer in the first portion is greater than a thickness of the insulation layer in the second portion.

7. The LED of claim 3, wherein the insulation layer in the first portion has a varying thickness and the insulation layer in the second portion has a uniform thickness.

8. The LED of claim 3, wherein the insulation layer extends to cover a surface of the first conductive type semiconductor layer, the surface of the first conductive type semiconductor layer not covered by the active layer.

9. The LED of claim 8, wherein the insulation layer covering the surface of the first conductive type semiconductor layer has a thickness less than a thickness disposed over the second conductive type semiconductor layer.

10. The LED of claim 5, wherein the first thickness is greater than the second thickness.

11. The LED of claim 5, wherein the first thickness of the barrier layer is varying.

12. A light emitting diode (LED) comprising:

a substrate;

a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer and operable to emit light in response to an electrical current through the first and second type semiconductor layers, wherein the semiconductor stack is patterned to include an exposure region penetrating the active layer and the second conductive type semiconductor layer to expose the first conductive type semiconductor layer;

a reflection structure disposed over the second conductive type semiconductor layer and including a metal;

an insulation layer disposed over the second conductive type semiconductor layer and including portions disposed in spaces on opposite sides of the reflection structure; and

a barrier layer including conductive materials and disposed in the spaces, the barrier layer extending to cover the reflection structure.

13. The LED of claim 12, wherein the insulation layer extends to cover the semiconductor stack, and the insulation layer includes sections of different thicknesses over the exposure region of the first conductive type semiconductor layer and a top surface of the second conductive type semiconductor layer, respectively.

14. The LED of claim 12, wherein a first thickness of the barrier layer over the reflection structure is different from a second thickness of the barrier layer over the second conductive type semiconductor layer.

15. The LED of claim 12, wherein the reflection structure is inclined with respect to a surface of the second conductive type semiconductor layer.

16. The LED of claim 12, further includes a contact layer in an electrical contact with the first conductive type semiconductor layer through the exposure region of the first conductive type semiconductor layer.

17. The LED of claim 13, wherein the insulation layer further extends to cover the reflection structure, and the insulation layer has a different thickness over the reflection structure from a thickness of the insulation layer over a top surface of the second conductive type semiconductor layer.

18. The LED of claim 17, wherein the insulation layer has a varying thickness along a side surface of the barrier layer and has a uniform thickness along a top surface of the barrier layer.

19. The LED of claim 17, wherein the varying thickness of the insulation layer increases as being away from the top surface of the barrier layer.

20. The LED of claim 14, wherein the first thickness of the barrier layer is greater than the second thickness.

21. The LED of claim 14, wherein the first thickness of the barrier layer varies along a side surface and a top surface of the barrier layer.