Self-assembly of nanostructures
First Claim
1. A method of forming a structure having selectively placed carbon nanotubes, the method comprising:
- conformally depositing a first layer at a thickness of less than about 5 nanometers onto a substrate including a topographical pattern;
conformally depositing a second layer at a thickness of less than about 5 nanometers onto the first layer, wherein the first layer comprises a metal oxide or metal nitride, and the second layer comprises a non-metal oxide or metal;
repeating conformally depositing the first and second layers;
planarizing a surface to expose an alternating surface pattern of the first and second layers;
functionalizing the exposed first layer surface with an electron-deficient compound; and
selectively placing a monolayer of electron-rich arene coated carbon nanotubes on the exposed first layer surface with the electron-deficient compound.
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Accused Products
Abstract
Sub-lithographic structures configured for selective placement of carbon nanotubes and methods of fabricating the same generally includes alternating conformal first and second layers provided on a topographical pattern formed in a dielectric layer. The conformal layers can be deposited by atomic layer deposition or chemical vapor deposition at thicknesses less than 5 nanometers. A planarized surface of the alternating conformal first and second layers provides an alternating pattern of exposed surfaces corresponding to the first and second layer, wherein a width of at least a portion of the exposed surfaces is substantially equal to the thickness of the corresponding first and second layers. The first layer is configured to provide an affinity for carbon nanotubes and the second layer does not have an affinity such that the carbon nanotubes can be selectively placed onto the exposed surfaces of the alternating pattern corresponding to the first layer.
8 Citations
15 Claims
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1. A method of forming a structure having selectively placed carbon nanotubes, the method comprising:
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conformally depositing a first layer at a thickness of less than about 5 nanometers onto a substrate including a topographical pattern; conformally depositing a second layer at a thickness of less than about 5 nanometers onto the first layer, wherein the first layer comprises a metal oxide or metal nitride, and the second layer comprises a non-metal oxide or metal; repeating conformally depositing the first and second layers; planarizing a surface to expose an alternating surface pattern of the first and second layers; functionalizing the exposed first layer surface with an electron-deficient compound; and selectively placing a monolayer of electron-rich arene coated carbon nanotubes on the exposed first layer surface with the electron-deficient compound. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a structure having selectively placed carbon nanotubes, the method comprising:
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conformally depositing a first layer at a thickness of less than about 5 nanometers onto a substrate including a topographical pattern; conformally depositing a second layer at a thickness of less than about 5 nanometers onto the first layer, wherein the first layer has an isoelectric point greater than the second layer; repeating conformally depositing the first and second layers; planarizing a surface to expose an alternating surface pattern of the first and second layers; functionalizing the exposed first layer surface with an electron-deficient compound having a terminal acid group, wherein the isoelectric point of the first layer is greater than a pKa of the terminal acid group, and wherein the isoelectric point of the second layer is less than the pKa of the terminal acid group; and selectively placing a monolayer of electron-rich arene coated carbon nanotubes on the exposed first layer surface with the electron-deficient compound. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification