Copper alloy for electronic/electrical device, copper alloy plastically-worked material for electronic/electrical device, component for electronic/electrical device, terminal, and busbar

• US 10,676,803 B2
• Filed: 09/08/2016
• Issued: 06/09/2020
• Est. Priority Date: 09/09/2015
• Status: Active Grant

• Current Assignee: Mitsubishi Materials Corporation
• Original Assignee: Mitsubishi Materials Corporation
• Inventors: Matsunaga, Hirotaka, Maki, Kazunari
• Primary Examiner(s): Dumbris, Seth
• Application Number:
  US15/741,148
• Publication Number:
  US 20180187292A1
• Time in Patent Office: 1,370 Days
• Field of Search: None
• CPC Class Codes: B32B 15/018 one layer being formed of a noble metal or a noble metal alloy
• CPC Class Codes: B32B 15/20 comprising aluminium or copper B32B15/016 and B32B15/017 take precedence
• CPC Class Codes: C22C 9/00 Alloys based on copper
• CPC Class Codes: C22F 1/08 of copper or alloys based thereon
• CPC Class Codes: H01B 1/02 mainly consisting of metals or alloys
• CPC Class Codes: H01B 1/026 Alloys based on copper
• CPC Class Codes: H01B 5/02 Single bars, rods, wires, or strips
• CPC Class Codes: H01R 4/58 characterised by the form or material of the contacting members H01R4/01 takes precedence
• CPC Class Codes: Y10T 428/12431 Foil or filament smaller than 6 mils
• CPC Class Codes: Y10T 428/12903 Cu-base component

Abstract

A copper alloy for an electronic and electric device is provided. The copper alloy includes: Mg in a range of 0.15 mass % or more and less than 0.35 mass %; and a Cu balance including inevitable impurities, wherein the electrical conductivity of the copper alloy is more than 75% IACS, and a strength ratio TS_TD/TS_LD, which is calculated from strength TS_TD obtained in a tensile test performed in a direction perpendicular to a rolling direction and strength TS_LD obtained in a tensile test performed in a direction parallel to a rolling direction, is more than 0.9 and less than 1.1. The copper alloy may further include P in a range of 0.0005 mass % or more and less than 0.01 mass %.

Claims

1. A copper alloy for an electronic and electric device, said copper alloy consisting of:

Mg in a range of 0.15 mass % or more and less than 0.35 mass %;

P in a range of 0.0005 mass % or more and less than 0.01 mass %; and

a Cu balance including inevitable impurities, wherein

the electrical conductivity of the copper alloy is more than 75% IACS, and

a strength ratio TS_TD/TS_LD is more than 0.9 and less than 1.1, where strength TS_TD is obtained in a tensile test performed in a direction perpendicular to a rolling direction and strength TS_LD is obtained in a tensile test performed in a direction parallel to a rolling direction.

2. The copper alloy for an electronic and electric device according to claim 1, wherein

the Mg content [Mg] in mass % and the P content [P] in mass % satisfy a relational expression of [Mg]+20×

[P]<

0.5.

3. The copper alloy for an electronic and electric device according to claim 1, wherein

the Mg content [Mg] in mass % and the P content [P] in mass % satisfy a relational expression of [Mg]/[P]≤

400.

4. The copper alloy for an electronic and electric device according to claim 1, wherein

a ratio of crystals having a crystal orientation within 10°

with respect to a Brass orientation {110} <

112>

is 40% or less, and

a ratio of crystals having a crystal orientation within 10°

with respect to a Copper orientation {112} <

111>

is 40% or less.

5. A plastically-worked copper alloy material for an electronic and electric device made of the copper alloy for an electronic and electric device according to claim 1.

6. The plastically-worked copper alloy material for an electronic and electric device according to claim 5, wherein a Sn plating layer or a Ag plating layer is provided on a surface of the plastically-worked copper alloy material.

7. A component for an electronic and electric device made of the plastically-worked copper alloy material for an electronic and electric device according to claim 5.

8. A terminal made of the plastically-worked copper alloy material for an electronic and electric device according to claim 5.

9. A busbar made of the plastically-worked copper alloy material for an electronic and electric device according to claim 5.

10. The copper alloy for an electronic and electric device according to claim 1, wherein

the copper alloy is made from a raw material that is melted to produce an ingot, and

the ingot undergoes a heating treatment at a temperature in a range of 300°

C. to 900°

C.

11. The copper alloy for an electronic and electric device according to claim 1, wherein

the copper alloy has a shape that is formed by a finish working step performed prior to an annealing step.