Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
First Claim
1. A substrate processing apparatus comprising:
- a process chamber where a substrate is processed;
a gas supply configured to supply a gas into the process chamber;
a plasma generator configured to plasma-excite the gas supplied into the process chamber to generate a plasma, the plasma generator including a first electrode and a second electrode, each of which is electrically connected to a high frequency power source, wherein the plasma is generated between the first electrode and the second electrode;
an impedance meter configured to measure a total impedance of an impedance of the first electrode, an impedance of the second electrode, and an impedance of the plasma generated between the first electrode and the second electrode;
a first switch electrically connected between the impedance meter and the first electrode;
a second switch electrically connected between the impedance meter and the second electrode; and
a controller configured to;
determine an amount of active species of the plasma generated by the plasma generator based on the total impedance measured by the impedance meter,control the high frequency power source based on the amount of active species; and
detect deterioration or disconnection of the first electrode and the second electrode by selectively switching the first switch and the second switch and measuring the total impedance.
2 Assignments
0 Petitions
Accused Products
Abstract
Described herein is a technique capable of uniformly processing substrates. According to the technique described herein, there is provided a substrate processing apparatus including: a process chamber where a substrate is processed; a gas supply configured to supply a gas into the process chamber; a plasma generator configured to plasma-excite the gas supplied into the process chamber, the plasma generator including an electrode electrically connected to a high frequency power source; an impedance meter configured to measure an impedance of the plasma generator; a determiner configured to determine an amount of active species generated by the plasma generator based on the impedance measured by the impedance meter; and a controller configured to control the high frequency power source based on the amount of active species determined by the determiner.
6 Citations
9 Claims
-
1. A substrate processing apparatus comprising:
-
a process chamber where a substrate is processed; a gas supply configured to supply a gas into the process chamber; a plasma generator configured to plasma-excite the gas supplied into the process chamber to generate a plasma, the plasma generator including a first electrode and a second electrode, each of which is electrically connected to a high frequency power source, wherein the plasma is generated between the first electrode and the second electrode; an impedance meter configured to measure a total impedance of an impedance of the first electrode, an impedance of the second electrode, and an impedance of the plasma generated between the first electrode and the second electrode; a first switch electrically connected between the impedance meter and the first electrode; a second switch electrically connected between the impedance meter and the second electrode; and a controller configured to; determine an amount of active species of the plasma generated by the plasma generator based on the total impedance measured by the impedance meter, control the high frequency power source based on the amount of active species; and detect deterioration or disconnection of the first electrode and the second electrode by selectively switching the first switch and the second switch and measuring the total impedance. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
Specification