Semiconductor processing chamber multistage mixing apparatus

• US 10,679,870 B2
• Filed: 02/15/2018
• Issued: 06/09/2020
• Est. Priority Date: 02/15/2018
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Samir, Mehmet Tugrul, Yang, Dongqing
• Primary Examiner(s): Turner, Brian
• Application Number:
  US15/897,860
• Publication Number:
  US 20190252216A1
• Time in Patent Office: 845 Days
• CPC Class Codes: B01F 2101/58 Mixing semiconducting materials, e.g. during semiconductor or wafer manufacturing processes
• CPC Class Codes: B01F 25/105 Mixing heads, i.e. compact mixing units or modules, using mixing valves for feeding and mixing at least two components
• CPC Class Codes: B01F 25/31423 with a plurality of perforations in the circumferential direction only and covering the whole circumference
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

Claims

1. A semiconductor processing system comprising:

a processing chamber;

a remote plasma unit coupled with the processing chamber;

a mixing manifold coupled between the remote plasma unit and the processing chamber, wherein the mixing manifold is characterized by a first end and a second end opposite the first end, wherein the mixing manifold is coupled with the processing chamber at the second end, wherein the mixing manifold defines a central channel through the mixing manifold, wherein the mixing manifold defines a port along an exterior of the mixing manifold, wherein the port is fluidly coupled with a first trench defined within the first end of the mixing manifold, wherein the first trench comprises a first annular trench, wherein the first trench is characterized by an inner radius at a first inner sidewall and an outer radius, wherein the first trench provides fluid access to the central channel through the first inner sidewall, wherein the mixing manifold further comprises a second trench defined within the first end of the mixing manifold, wherein the second trench comprises a second annular trench, wherein the second trench is located radially outward from the first trench, and wherein the port is fluidly coupled with the second trench.

2. The semiconductor processing system of claim 1, wherein the second trench is characterized by an inner radius at a second inner sidewall, and wherein the second inner sidewall further defines the outer radius of the first trench.

3. The semiconductor processing system of claim 2, wherein the second inner sidewall defines a plurality of apertures defined through the second inner sidewall and providing fluid access to the first trench.

4. The semiconductor processing system of claim 3, wherein the first inner sidewall defines a plurality of apertures defined through the first inner sidewall and providing fluid access to the central channel.

5. The semiconductor processing system of claim 4, wherein each aperture of the plurality of apertures defined through the second inner sidewall are radially offset from each aperture of the plurality of apertures defined through the first inner sidewall.

6. The semiconductor processing system of claim 3, wherein the plurality of apertures are defined through the second inner sidewall at a location between the first end of the mixing manifold and the second end of the mixing manifold.

7. The semiconductor processing system of claim 6, wherein the second inner sidewall at the first end of the mixing manifold is continuous along a plane defining the first end of the mixing manifold.

8. The semiconductor processing system of claim 1, further comprising an isolator coupled between the mixing manifold and the remote plasma unit.

9. The semiconductor processing system of claim 8, wherein the isolator comprises a ceramic.

10. The semiconductor processing system of claim 1, further comprising an adapter coupled between the mixing manifold and the remote plasma unit.

11. The semiconductor processing system of claim 10, further comprising a spacer positioned between the adapter and the mixing manifold.

12. The semiconductor processing system of claim 1, wherein the adapter is characterized by a first end and a second end opposite the first end, wherein the adapter defines a central channel extending partially through the adapter, wherein the adapter defines a port through an exterior of the adapter, wherein the port is fluidly coupled with a mixing channel defined within the adapter, and wherein the mixing channel is fluidly coupled with the central channel of the adapter.

13. The semiconductor processing system of claim 12, wherein the adapter comprises an oxide on interior surfaces of the adapter.

14. A semiconductor processing system comprising:

a remote plasma unit;

a processing chamber comprising;

a gasbox defining a central,

a blocker plate coupled with the gasbox, wherein the blocker plate defines a plurality of apertures through the blocker plate, and

a faceplate coupled with the blocker plate at a first surface of the faceplate; and

a mixing manifold coupled with the gasbox, wherein the mixing manifold is characterized by a first end and a second end opposite the first end, wherein the mixing manifold is coupled with the processing chamber at the second end, wherein the mixing manifold defines a central channel through the mixing manifold that is fluidly coupled with the central channel defined through the gasbox, wherein the mixing manifold defines a port along an exterior of the mixing manifold, wherein the port is fluidly coupled with a first trench defined within the first end of the mixing manifold, wherein the first trench is characterized by an inner radius at a first inner sidewall and an outer radius, wherein the first trench provides fluid access to the central channel through the first inner sidewall, wherein the mixing manifold further comprises a second trench defined within the first end of the mixing manifold, wherein the second trench comprises an annular trench, wherein the second trench is located radially outward from the first trench, and wherein the port is fluidly coupled with the second trench.

15. The semiconductor processing system of claim 14, further comprising a heater coupled externally to the gasbox about a mixing manifold coupled to the gasbox.

16. The semiconductor processing system of claim 14, wherein the mixing manifold comprises nickel.

17. The semiconductor processing system of claim 14, further comprising an adapter coupled with the remote plasma unit, wherein the adapter is characterized by a first end and a second end opposite the first end, wherein the adapter defines a central channel extending partially through the adapter from the first end to a midpoint of the adapter, wherein the adapter defines a plurality of access channels from the midpoint of the adapter extending towards the second end of the adapter, and wherein the plurality of access channels are distributed radially about a central axis through the adapter.

18. The semiconductor processing system of claim 17, wherein the adapter defines a port through an exterior of the adapter, wherein the port is fluidly coupled with a mixing channel defined within the adapter, and wherein the mixing channel extends through a central portion of the adapter towards the second end of the adapter.

19. The semiconductor processing system of claim 17, wherein the adapter defines a port through an exterior of the adapter, wherein the port is fluidly coupled with a mixing channel defined within the adapter, and wherein the mixing channel extends through a central portion of the adapter towards the midpoint of the adapter to fluidly access the central channel defined by the adapter.