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Semiconductor processing chamber multistage mixing apparatus

  • US 10,679,870 B2
  • Filed: 02/15/2018
  • Issued: 06/09/2020
  • Est. Priority Date: 02/15/2018
  • Status: Active Grant
First Claim
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1. A semiconductor processing system comprising:

  • a processing chamber;

    a remote plasma unit coupled with the processing chamber;

    a mixing manifold coupled between the remote plasma unit and the processing chamber, wherein the mixing manifold is characterized by a first end and a second end opposite the first end, wherein the mixing manifold is coupled with the processing chamber at the second end, wherein the mixing manifold defines a central channel through the mixing manifold, wherein the mixing manifold defines a port along an exterior of the mixing manifold, wherein the port is fluidly coupled with a first trench defined within the first end of the mixing manifold, wherein the first trench comprises a first annular trench, wherein the first trench is characterized by an inner radius at a first inner sidewall and an outer radius, wherein the first trench provides fluid access to the central channel through the first inner sidewall, wherein the mixing manifold further comprises a second trench defined within the first end of the mixing manifold, wherein the second trench comprises a second annular trench, wherein the second trench is located radially outward from the first trench, and wherein the port is fluidly coupled with the second trench.

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