Differing device characteristics on a single wafer by selective etch

• US 10,679,901 B2
• Filed: 08/14/2018
• Issued: 06/09/2020
• Est. Priority Date: 08/14/2018
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Zhou, Huimei, Mochizuki, Shogo, Tsutsui, Gen, Bao, Ruqiang
• Primary Examiner(s): Wilson, Allan R
• Application Number:
  US16/103,433
• Publication Number:
  US 20200058555A1
• Time in Patent Office: 665 Days
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/30608 Anisotropic liquid etching H01L21/3063 takes precedence
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/823431 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 21/845 including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 27/0886 including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 27/1211 combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

Integrated chips and methods of forming the same include etching a first stack of layers in a first region and etching a second stack of layers in a second region. The first stack of layers includes a first semiconductor layer having a first thickness over a first sacrificial layer having a second thickness. Etching the first stack of layers removes the first sacrificial layer from the first stack of layers and creates a first gap. The second stack of layers includes a second semiconductor layer having a third thickness over a second sacrificial layer having a fourth thickness. Etching the second stack of layers removes the second sacrificial layer from the second stack of layers and to create a second gap. A dielectric material fills the first gap and the second gap.

Claims

1. A method of forming an integrated chip, comprising:

etching a first stack of layers in a first region, the first stack of layers comprising a first semiconductor layer having a first thickness over a first sacrificial layer having a second thickness, to remove the first sacrificial layer from the first stack of layers and to create a first gap;

etching a second stack of layers in a second region, the second stack of layers comprising a second semiconductor layer having a third thickness over a second sacrificial layer having a fourth thickness, different from the second thickness, to remove the second sacrificial layer from the second stack of layers and to create a second gap; and

depositing a dielectric material that fills the first gap and the second gap.

2. The method of claim 1, wherein the first stack of layers further comprises a third semiconductor layer having a fifth thickness over the first semiconductor layer and the second stack of layers further comprises a fourth semiconductor layer having a sixth thickness over the second semiconductor layer.

3. The method of claim 2, wherein the first and second semiconductor layers are formed from a first semiconductor material having a first lattice constant and wherein the third and fourth semiconductor layers are formed from a second semiconductor material having a second lattice constant that is different from the first lattice constant.

4. The method of claim 1, further comprising forming a passivating layer around the first stack of layers and the second stack of layers before etching the first stack of layers and the second stack of layers.

5. The method of claim 4, further comprising performing a fin cut to expose ends of the first stack of layers and the second stack of layers after forming the passivating layer.

6. The method of claim 5, wherein depositing the dielectric material comprises a conformal deposition process that fills dielectric material in through the exposed ends of the first stack of layers and the second stack of layers.

7. The method of claim 5, wherein etching the first stack of layers and etching the second stack of layers each comprises an isotropic etch process that etches away sacrificial material through the exposed ends of the first stack of layers and the second stack of layers.

8. The method of claim 1, further comprising etching fins from the first stack of layers and the second stack of layers with an anisotropic etch that cuts partially into an underlying substrate.

9. The method of claim 1, further comprising forming the first stack of layers and the second stack of layers in respective trenches in a substrate by epitaxial growth.

10. The method of claim 9, wherein the first stack of layers has a same combined thickness as the second stack of layers.

11. A method of forming an integrated chip, comprising:

forming, in a first trench in a first region, a first stack of layers that includes a first semiconductor layer having a first thickness over a first sacrificial layer having a second thickness;

forming, in a second trench in a second region, a first stack of layers that includes a second semiconductor layer having a third thickness over a second sacrificial layer having a fourth thickness;

etching the first stack of layers to remove the first sacrificial layer from the first stack of layers and to create a first gap;

etching the second stack of layers to remove the second sacrificial layer from the second stack of layers and to create a second gap; and

depositing a dielectric material that fills the first gap and the second gap.

12. The method of claim 11, wherein the first stack of layers further comprises a third semiconductor layer having a fifth thickness over the first semiconductor layer and the second stack of layers further comprises a fourth semiconductor layer having a sixth thickness over the second semiconductor layer.

13. The method of claim 12, wherein the first and second semiconductor layers are formed from a first semiconductor material having a first lattice constant and wherein the third and fourth semiconductor layers are formed from a second semiconductor material having a second lattice constant that is different from the first lattice constant.

14. The method of claim 11, further comprising etching fins from the first stack of layers and the second stack of layers with an anisotropic etch that cuts partially into an underlying substrate.

15. The method of claim 11, wherein the first stack of layers has a same combined thickness as the second stack of layers.

17. The method of claim 15, wherein the first stack of layers further comprises a third semiconductor layer having a fifth thickness over the first semiconductor layer and the second stack of layers further comprises a fourth semiconductor layer having a sixth thickness over the second semiconductor layer.

18. The method of claim 15, wherein depositing the dielectric material comprises a conformal deposition process that fills dielectric material in through the exposed ends of the first stack of layers and the second stack of layers.

19. The method of claim 15, wherein etching the first stack of layers and etching the second stack of layers each comprises an isotropic etch process that etches away sacrificial material through the exposed ends of the first stack of layers and the second stack of layers.

20. The method of claim 15, further comprising etching fins from the first stack of layers and the second stack of layers with an anisotropic etch that cuts partially into an underlying substrate.

16. A method of forming an integrated chip, comprising:

forming a passivating layer around a first stack of layers and a second stack of layers, wherein the first stack of layers includes a first semiconductor layer having a first thickness over a first sacrificial layer having a second thickness, and wherein the second stack of layers includes a second semiconductor layer having a third thickness over a second sacrificial layer having a fourth thickness;

performing a fin cut to expose ends of the first stack of layers and the second stack of layers after forming the passivating layer;

etching a first stack of layers in a first region, after forming the passivating layer, to remove the first sacrificial layer from the first stack of layers and to create a first gap;

etching a second stack of layers in a second region, after forming the passivating layer, to remove the second sacrificial layer from the second stack of layers and to create a second gap; and

depositing a dielectric material that fills the first gap and the second gap.