Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device

• US 10,680,017 B2
• Filed: 11/04/2015
• Issued: 06/09/2020
• Est. Priority Date: 11/07/2014
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Uesaka, Shogo, Sasaki, Toshiki, Ohsawa, Nobuharu, Seo, Satoshi
• Primary Examiner(s): Malsawma, Lex H
• Assistant Examiner(s): Dykes, Laura M
• Application Number:
  US14/932,343
• Publication Number:
  US 20160133878A1
• Time in Patent Office: 1,679 Days
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H10K 2101/27 Combination of fluorescent and phosphorescent emission
• CPC Class Codes: H10K 50/12 comprising dopants
• CPC Class Codes: H10K 50/818 Reflective anodes, e.g. ITO combined with thick metallic layers
• CPC Class Codes: H10K 50/852 comprising a resonant cavity structure, e.g. Bragg reflector pair
• CPC Class Codes: H10K 59/40 OLEDs integrated with touch screens

Abstract

A light-emitting element including a first electrode, a second electrode, and an EL layer provided between the first and second electrodes is provided. The first electrode includes a conductive layer, a first transparent conductive layer in contact with the conductive layer, and a second transparent conductive layer in contact with the first transparent conductive layer. The first transparent conductive layer contains a first oxide. The second transparent conductive layer contains a second oxide. The conductive layer has a function of reflecting light. The first oxide contains In and M (M represents Al, Si, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf). The second oxide contains In. The resistivity of the second transparent conductive layer is lower than that of the first transparent conductive layer. The thickness of the second transparent conductive layer is greater than or equal to that of the first transparent conductive layer.

Claims

1. A light-emitting element comprising:

a first electrode and a second electrode; and

an EL layer between the first electrode and the second electrode,

wherein the first electrode comprises;

a conductive layer configured to reflect light;

a first transparent conductive layer in contact with the conductive layer, the first transparent conductive layer comprising a first oxide; and

a second transparent conductive layer in contact with the first transparent conductive layer, the second transparent conductive layer comprising a second oxide,

wherein the first oxide comprises In, Ga, and Zn,

wherein a content of Zn is higher than a content of Ga in the first oxide,

wherein the second oxide comprises indium tin oxide,

wherein the first transparent conductive layer is sandwiched between the conductive layer and the second transparent conductive layer,

wherein a resistivity of the second transparent conductive layer is lower than a resistivity of the first transparent conductive layer, and

wherein a thickness of the second transparent conductive layer is greater than or equal to a thickness of the first transparent conductive layer.

2. The light-emitting element according to claim 1, wherein the conductive layer comprises Al.

3. The light-emitting element according to claim 1, wherein the thickness of the first transparent conductive layer is greater than or equal to 5 nm and less than or equal to 20 nm.

4. The light-emitting element according to claim 1, wherein the second oxide further comprises silicon or silicon oxide.

5. The light-emitting element according to claim 1, wherein the second electrode comprises at least one of In, Ag, and Mg.

6. The light-emitting element according to claim 1, wherein the EL layer comprises a first light-emitting layer and a second light-emitting layer.

7. The light-emitting element according to claim 1,

wherein the EL layer comprises a first light-emitting layer and a second light-emitting layer,

wherein the first light-emitting layer comprises a first compound which has a peak of an emission spectrum in any one color selected from violet, blue, and blue green, and

wherein the second light-emitting layer comprises a second compound which has a peak of an emission spectrum in any one color selected from green, yellow green, yellow, orange, and red.

8. The light-emitting element according to claim 1,

wherein the EL layer comprises a first light-emitting layer and a second light-emitting layer,

wherein the first light-emitting layer comprises a first compound which is configured to convert singlet excitation energy into light emission, and

wherein the second light-emitting layer comprises a second compound which is configured to convert triplet excitation energy into light emission.

9. A display device comprising:

the light-emitting element according to claim 1; and

a transistor electrically connected to the light-emitting element,

wherein a channel region of the transistor comprises an oxide semiconductor.

10. An electronic device comprising the display device according to claim 9.

11. A lighting device comprising the light-emitting element according to claim 1.

12. A light-emitting element comprising:

a first electrode and a second electrode; and

an EL layer between the first electrode and the second electrode,

wherein the first electrode comprises;

a conductive layer configured to reflect light;

a first transparent conductive layer in contact with the conductive layer, the first transparent conductive layer comprising a first oxide; and

a second transparent conductive layer in contact with the first transparent conductive layer, the second transparent conductive layer comprising a second oxide,

wherein the first oxide comprises In, Ga, and Zn,

wherein a content of Zn is higher than a content of Ga in the first oxide,

wherein the content of Ga is higher than a content of In in the first oxide,

wherein the second oxide comprises indium tin oxide,

wherein the first transparent conductive layer is sandwiched between the conductive layer and the second transparent conductive layer,

wherein a resistivity of the second transparent conductive layer is lower than a resistivity of the first transparent conductive layer, and

wherein a thickness of the second transparent conductive layer is greater than or equal to a thickness of the first transparent conductive layer.

13. The light-emitting element according to claim 12, wherein the conductive layer comprises Al.

14. The light-emitting element according to claim 12, wherein the thickness of the first transparent conductive layer is greater than or equal to 5 nm and less than or equal to 20 nm.

15. The light-emitting element according to claim 12, wherein the second oxide further comprises silicon or silicon oxide.

16. The light-emitting element according to claim 12, wherein the second electrode comprises at least one of In, Ag, and Mg.

17. The light-emitting element according to claim 12, wherein the EL layer comprises a first light-emitting layer and a second light-emitting layer.

18. A display device comprising:

the light-emitting element according to claim 12; and

a transistor electrically connected to the light-emitting element,

wherein a channel region of the transistor comprises an oxide semiconductor.

19. A light-emitting element comprising:

a first electrode and a second electrode; and

an EL layer between the first electrode and the second electrode,

wherein the first electrode comprises;

a conductive layer configured to reflect light;

a first transparent conductive layer in contact with the conductive layer, the first transparent conductive layer comprising a first oxide;

a second transparent conductive layer in contact with the first transparent conductive layer, the second transparent conductive layer comprising a second oxide;

a third transparent conductive layer in contact with the conductive layer, the third transparent conductive layer comprising the first oxide; and

a fourth transparent conductive layer in contact with the third transparent conductive layer, the fourth transparent conductive layer comprising the second oxide,

wherein the conductive layer comprises Al,

wherein the first oxide comprises In, Ga, and Zn,

wherein a content of Zn is higher than a content of Ga in the first oxide,

wherein the content of Ga is higher than a content of In in the first oxide,

wherein the second oxide comprises indium tin oxide,

wherein the first transparent conductive layer is sandwiched between the conductive layer and the second transparent conductive layer,

wherein the third transparent conductive layer is sandwiched between the conductive layer and the fourth transparent conductive layer,

wherein a resistivity of the second transparent conductive layer is lower than a resistivity of the first transparent conductive layer, and

wherein a thickness of the second transparent conductive layer is greater than or equal to a thickness of the first transparent conductive layer.

20. The light-emitting element according to claim 19, wherein the thickness of the first transparent conductive layer is greater than or equal to 5 nm and less than or equal to 20 nm.

21. The light-emitting element according to claim 19, wherein the second oxide further comprises silicon or silicon oxide.

22. The light-emitting element according to claim 19, wherein the second electrode comprises at least one of In, Ag, and Mg.

23. The light-emitting element according to claim 19, wherein the EL layer comprises a first light-emitting layer and a second light-emitting layer.

24. A display device comprising:

the light-emitting element according to claim 19; and

a transistor electrically connected to the light-emitting element,

wherein a channel region of the transistor comprises an oxide semiconductor.