Method of manufacturing a semiconductor device using a metal oxide film
First Claim
1. A method of manufacturing a semiconductor device, comprising:
- (a) depositing a metal oxide film having oxygen and at least one of hafnium and zirconium as a main component on a semiconductor substrate;
(b) depositing a conductor film on the metal oxide film;
(c) subjecting the metal oxide film to microwave heat treatment;
(d) depositing a semiconductor film on the conductor film; and
(e) patterning a semiconductor film, the conductor film and the metal oxide film to form a gate electrode and a ferroelectric film;
wherein the gate electrode and the ferroelectric film configure a ferroelectric memory cell.
1 Assignment
0 Petitions
Accused Products
Abstract
To allow a metal oxide film composed mainly of O and at least one of Hf and Zr to exhibit ferroelectric properties. After deposition of a hafnium oxide film on a semiconductor substrate via an insulating film, the semiconductor substrate is exposed to microwaves to selectively heat the hafnium oxide film. This makes it possible to form a larger number of orthorhombic crystals in the crystals of the hafnium oxide film. The hafnium oxide film thus obtained can therefore exhibit ferroelectric properties without adding, thereto, an impurity such as Si. This means that the hafnium oxide film having a reverse size effect can be used as a ferroelectric film of a ferroelectric memory cell and contributes to the manufacture of a miniaturized ferroelectric memory cell.
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Citations
12 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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(a) depositing a metal oxide film having oxygen and at least one of hafnium and zirconium as a main component on a semiconductor substrate; (b) depositing a conductor film on the metal oxide film; (c) subjecting the metal oxide film to microwave heat treatment; (d) depositing a semiconductor film on the conductor film; and (e) patterning a semiconductor film, the conductor film and the metal oxide film to form a gate electrode and a ferroelectric film; wherein the gate electrode and the ferroelectric film configure a ferroelectric memory cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification