Trench power semiconductor and method of making the same

• US 10,680,076 B2
• Filed: 11/06/2019
• Issued: 06/09/2020
• Est. Priority Date: 06/30/2017
• Status: Active Grant

• Current Assignee: Super Group Semiconductor Co., Ltd.
• Original Assignee: Super Group Semiconductor Co., Ltd.
• Inventors: Hsu, Hsiu-Wen, Yeh, Chun-Ying, Lee, Yuan-Ming
• Primary Examiner(s): Mulpuri, Savitri
• Application Number:
  US16/675,302
• Publication Number:
  US 20200075739A1
• Time in Patent Office: 216 Days
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 21/823437 with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
• CPC Class Codes: H01L 29/0649 Dielectric regions, e.g. SiO2 regions, air gaps
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

The present disclosure provides a trench power semiconductor component and a method of making the same. The trench power semiconductor component includes a substrate, an epitaxial layer, and a trench gate structure. The epitaxial layer is disposed on the substrate, the epitaxial layer having at least one trench formed therein. The trench gate structure is located in the at least one trench. The trench gate structure includes a bottom insulating layer covering a lower inner wall of the at least one trench, a shielding electrode located in the lower half part of the at least one trench, a gate electrode disposed on the shielding electrode, an inter-electrode dielectric layer disposed between the gate electrode and the shielding electrode, an upper insulating layer covering an upper inner wall of the at least one trench, and a protection structure including a first wall portion and a second wall portion.

Claims

1. A method of manufacturing a trench power semiconductor component, comprising:

forming an epitaxial layer on a substrate;

forming a trench in the epitaxial layer;

forming a trench gate structure in the trench; and

forming a base region and a source region in the epitaxial layer, in which the source region is located above the base region;

wherein the step of forming the trench gate structure in the trench further includes;

forming a bottom insulating layer covering a lower inner wall of the trench;

forming a shielding electrode in the lower half part of the trench;

forming an upper insulating layer covering two side walls of the trench opposite each other;

forming a protection structure including a first wall portion and a second wall portion and covering at least one portion of the upper insulating layer, wherein the lower ends of the first wall portion and the second wall portion have height levels higher than or equal to that of the top end of the shielding electrode;

forming an inter-electrode dielectric layer; and

forming a gate electrode, the inter-electrode dielectric layer being located between the gate electrode and the shielding electrode, wherein the upper insulating layer, the bottom insulating layer, and the inter-electrode dielectric layer jointly define a first slit and a second slit, one located on either side of the inter-electrode dielectric layer.

2. The method according to claim 1, wherein the step of forming the trench gate structure in the trench further includes:

completely removing the first wall portion and the second wall portion before the step of forming the gate electrode; and

the first slit and the second slit being filled up by the gate electrode during the step of forming the gate electrode.

3. The method according to claim 1, further comprising the following steps before the step of forming the gate electrode:

removing a part of the first wall portion and a part of the second wall portion; and

after the step of forming the gate electrode, the first wall portion and a part of the gate electrode filling the first slit, and the second wall portion and a part of the gate electrode filling the second slit.

4. The method according to claim 1, wherein the inter-electrode dielectric layer is formed by performing a thermal oxidation process, and wherein a thermal oxide layer is simultaneously formed on a surface of the epitaxial layer, and thereafter the thermal oxide layer and the surface are removed so as to form the trench gate structure.

5. The method according to claim 1, further comprising:

forming a protection dielectric layer and a hard layer on the surface of the epitaxial layer before the step of forming the trench.

6. The method according to claim 5, wherein the step of forming the upper insulating layer is performed after the step of forming the inter-electrode dielectric layer.

7. A method of manufacturing a trench power semiconductor component, comprising:

forming an epitaxial layer on a substrate;

forming a trench in the epitaxial layer;

forming a trench gate structure in the trench; and

forming a base region and a source region in the epitaxial layer, in which the source region is located above the base region;

wherein the step of forming the trench gate structure in the trench further includes;

forming a bottom insulating layer covering a lower inner wall of the trench;

forming a shielding electrode in the lower half part of the trench;

forming an upper insulating layer covering two side walls of the trench opposite each other;

forming a protection structure including a first wall portion and a second wall portion and covering at least one portion of the upper insulating layer;

forming an inter-electrode dielectric layer;

removing a part of the first wall portion and a part of the second wall portion and forming a gate electrode, the inter-electrode dielectric layer being located between the gate electrode and the shielding electrode, wherein the upper insulating layer, the bottom insulating layer, and the inter-electrode dielectric layer jointly define a first slit and a second slit, one located on either side of the inter-electrode dielectric layer;

wherein the first wall portion and a part of the gate electrode fill the first slit, and the second wall portion and a part of the gate electrode fill the second slit.