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Liquid crystal display device, semiconductor device, and electronic appliance

  • US 10,684,517 B2
  • Filed: 04/26/2018
  • Issued: 06/16/2020
  • Est. Priority Date: 04/06/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor film over and in direct contact with a base insulating film;

    a gate insulating film over the semiconductor film;

    a gate electrode over the semiconductor film with the gate insulating film interposed therebetween;

    a source wiring electrically connected to the semiconductor film; and

    a capacitor comprising;

    a first electrode over and in direct contact with the base insulating film;

    a first wiring over the first electrode;

    the gate insulating film between the first electrode and the first wiring; and

    a second wiring over and in direct contact with the first wiring,wherein the source wiring and the second wiring contain a same material, andwherein the semiconductor film and the first electrode contain indium, gallium, zinc, and oxygen.

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