Liquid crystal display device, semiconductor device, and electronic appliance

• US 10,684,517 B2
• Filed: 04/26/2018
• Issued: 06/16/2020
• Est. Priority Date: 04/06/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime
• Primary Examiner(s): Chang, Charles S
• Application Number:
  US15/963,150
• Publication Number:
  US 20190004380A1
• Time in Patent Office: 782 Days
• Field of Search: 349 42- 47
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133514 Colour filters
• CPC Class Codes: G02F 1/1337 Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
• CPC Class Codes: G02F 1/134309 characterised by their geometrical arrangement
• CPC Class Codes: G02F 1/134363 for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The liquid crystal display device includes an island-shaped first semiconductor film 102 which is formed over a base insulating film 101 and in which a source 102d, a channel forming region 102a, and a drain 102b are formed; a first electrode 102c which is formed of a material same as the first semiconductor film 102 to be the source 102d or the drain 102b and formed over the base insulating film 101; a second electrode 108 which is formed over the first electrode 102c and includes a first opening pattern 112; and a liquid crystal 110 which is provided over the second electrode 108.

Claims

1. A semiconductor device comprising:

a semiconductor film over and in direct contact with a base insulating film;

a gate insulating film over the semiconductor film;

a gate electrode over the semiconductor film with the gate insulating film interposed therebetween;

a source wiring electrically connected to the semiconductor film; and

a capacitor comprising;

a first electrode over and in direct contact with the base insulating film;

a first wiring over the first electrode;

the gate insulating film between the first electrode and the first wiring; and

a second wiring over and in direct contact with the first wiring,

wherein the source wiring and the second wiring contain a same material, and

wherein the semiconductor film and the first electrode contain indium, gallium, zinc, and oxygen.

2. The semiconductor device according to claim 1, wherein the gate electrode and the first wiring are each in direct contact with the gate insulating film.

3. The semiconductor device according to claim 1, comprising a second electrode over and in direct contact with the base insulating film, wherein the second electrode contains the same material as the semiconductor film.

4. The semiconductor device according to claim 3, wherein the second electrode is a pixel electrode electrically connected to the semiconductor film.

5. The semiconductor device according to claim 3, comprising:

an interlayer insulating film over the second electrode;

a third electrode over the interlayer insulating film.

6. The semiconductor device according to claim 5, comprising a liquid crystal over the third electrode.

7. The semiconductor device according to claim 5, wherein the third electrode comprises an opening overlapping with the second electrode.

8. The semiconductor device according to claim 1, wherein the first electrode comprises an impurity to enhance conductivity.

9. A display device comprising:

a first pixel comprising a first transistor and a first capacitor,

wherein the first pixel comprises;

a first insulating film over a substrate;

a semiconductor film comprising a first region serving as a channel formation region and a second region adjacent to the channel formation region;

a gate insulating film over and in contact with the semiconductor film;

a gate electrode over and in contact with the gate insulating film;

a second insulating film over the gate electrode, the second insulating film containing an inorganic material;

a first conductive film over and in contact with the second insulating film;

a second conductive film over and in contact with the second insulating film;

a third insulating film over the first conductive film and the second conductive film, the third insulating film containing an organic material; and

an electrode over the third insulating film,

wherein the semiconductor film is over and in contact with the first insulating film,

wherein the semiconductor film comprises indium, gallium, zinc, and oxygen,

wherein a first electrode of the first capacitor comprises indium, gallium, zinc, and oxygen,

wherein a resistance of the second region is lower than a resistance of the first region,

wherein a resistance of the first electrode of the first capacitor is lower than a resistance of the first region,

wherein the first conductive film is electrically connected to the semiconductor film through a first opening in the second insulating film,

wherein the second conductive film is electrically connected to the semiconductor film through a second opening in the second insulating film, and

wherein the electrode is electrically connected to the second conductive film through a third opening in the third insulating film.

10. The display device according to claim 9, wherein the second region is a source region or a drain region of the first transistor.

11. The display device according to claim 9, wherein the first electrode of the first capacitor is provided in a third region of the semiconductor film.

12. The display device according to claim 9, wherein each of the first insulating film, the gate insulating film, and the second insulating film contains silicon oxide.

13. A display device comprising:

a first pixel comprising a first transistor and a first capacitor;

a second pixel comprising a second transistor and a second capacitor;

a third pixel comprising a third transistor and a third capacitor;

a red color filter;

a green color filter; and

a blue color filter,

wherein the first pixel comprises;

a first insulating film over a substrate;

a semiconductor film comprising a first region serving as a channel formation region and a second region adjacent to the channel formation region;

a gate insulating film over and in contact with the semiconductor film;

a gate electrode over and in contact with the gate insulating film;

a second insulating film over the gate electrode, the second insulating film containing an inorganic material;

a first conductive film over and in contact with the second insulating film;

a second conductive film over and in contact with the second insulating film;

a third insulating film over the first conductive film and the second conductive film, the third insulating film containing an organic material; and

an electrode over the third insulating film,

wherein the semiconductor film is over and in contact with the first insulating film,

wherein the semiconductor film comprises indium, gallium, zinc, and oxygen,

wherein a first electrode of the first capacitor comprises indium, gallium, zinc, and oxygen,

wherein a resistance of the second region is lower than a resistance of the first region,

wherein a resistance of the first electrode of the first capacitor is lower than a resistance of the first region,

wherein the first conductive film is electrically connected to the semiconductor film through a first opening in the second insulating film,

wherein the second conductive film is electrically connected to the semiconductor film through a second opening in the second insulating film,

wherein the electrode is electrically connected to the second conductive film through a third opening in the third insulating film,

wherein, in the first pixel, the third insulating film is over and in contact with the red color filter,

wherein, in the second pixel, the third insulating film is over and in contact with the green color filter, and

wherein, in the third pixel, the third insulating film is over and in contact with the blue color filter.

14. The display device according to claim 13, wherein the second region is a source region or a drain region of the first transistor.

15. The display device according to claim 13, wherein the first electrode of the first capacitor is provided in a third region of the semiconductor film.

16. The display device according to claim 13, wherein each of the first insulating film, the gate insulating film, and the second insulating film contains silicon oxide.

17. A display device comprising:

a film comprising indium, gallium, zinc, and oxygen;

a first insulating film over the film;

a gate electrode of a transistor over the first insulating film, the gate electrode overlapping with a first region of the film;

a second insulating film over the film and the gate electrode; and

a conductive film over the second insulating film, the conductive film comprising a region overlapping with a second region of the film,

wherein the second region of the film serves as a first electrode of a capacitor,

wherein the region of the conductive film serves as a second electrode of the capacitor,

wherein a third region of the film overlaps with neither the gate electrode nor the conductive film, and the first region and the second region are connected through the third region, and

wherein, in a channel width direction of the transistor, a width of the second region is larger than a width of the first region.

18. The display device according to claim 17, wherein the film is a semiconductor film.

19. The display device according to claim 17, wherein the conductive film comprises a portion serving as a pixel electrode.