Paste for ohmic contact to P-type semiconductor and method for forming ohmic contact to P-type semiconductor using the same

• US 10,685,762 B2
• Filed: 05/29/2018
• Issued: 06/16/2020
• Est. Priority Date: 06/13/2017
• Status: Active Grant

• Current Assignee: Korea Advanced Institute of Science and Technology
• Original Assignee: Korea Advanced Institute of Science and Technology
• Inventors: Choi, Ji-Won, Kim, Jin Sang, Kang, Chong Yun, Kim, Seong Keun, Baek, Seung Hyub, Kim, Sang Tae, Lee, Won Jae, Parmar, Narendra Singh, Lee, Young-Shin
• Primary Examiner(s): Kraig, William F
• Assistant Examiner(s): Rahman, Khatib A
• Application Number:
  US15/990,824
• Publication Number:
  US 20180358146A1
• Time in Patent Office: 749 Days
• CPC Class Codes: C08K 2003/2255 of molybdenum
• CPC Class Codes: C08K 2201/001 Conductive additives
• CPC Class Codes: C08K 3/22 of metals
• CPC Class Codes: C08L 29/04 Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
• CPC Class Codes: C09D 129/04 Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
• CPC Class Codes: H01B 1/22 the conductive material comprising metals or alloys
• CPC Class Codes: H01L 21/28512 on semiconductor bodies comprising elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 21/28575 on semiconductor bodies comprising AIIIBV compounds
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/452 on AIII-BV compounds

Abstract

The present disclosure relates to a paste for ohmic contact to p-type semiconductor, including a metal oxide and a binder, wherein the metal oxide is a rhenium oxide or a molybdenum oxide.

Claims

1. A method for forming an ohmic contact to a p-type semiconductor, comprising:

applying a paste to a flexible GaN substrate,

drying the paste on the flexible GaN substrate without a vacuum process or a thermal process, and

performing a surface treatment of the flexible GaN substrate,

wherein the paste comprises a metal oxide and a binder,

wherein the metal oxide is a rhenium oxide or a molybdenum oxide, and

wherein the binder is an inorganic or organic polymer compound.

2. The method of forming the ohmic contact to p-type semiconductor according to claim 1, wherein the metal oxide is rhenium oxide and wherein the rhenium oxide includes at least one selected from Re₂O, Re₂O₃, ReO₂, ReO₃ and Re₂O₇.

3. The method of forming the ohmic contact to p-type semiconductor according to claim 1, wherein the metal oxide is molybdenum oxide and wherein the molybdenum oxide includes at least one selected from Mo₂O, Mo₂O₃, MoO₂, MoO₃ and Mo₂O₇.

4. The method of forming the ohmic contact to p-type semiconductor according to claim 1, wherein the organic polymer compound is present and the organic polymer compound includes at least one selected from a vinyl-based polymer compound, a polyamide-based polymer compound and a polyurethane-based polymer compound.

5. The method of forming the ohmic contact to p-type semiconductor according to claim 4, wherein the vinyl-based polymer compound is present and the vinyl-based polymer compound is polyvinylalcohol.

6. The method of forming the ohmic contact to p-type semiconductor according to claim 5, wherein the polyvinylalcohol is present in an amount ranging between 0.03 and 0.15 mL.

7. The method of forming the ohmic contact to p-type semiconductor according to claim 1, wherein the rhenium oxide is present and includes ReO₂, and the binder includes 0.15 mL of polyvinylalcohol.

8. The method of forming the ohmic contact to p-type semiconductor according to claim 1, wherein the molybdenum oxide is present and includes MoO₂, and the binder includes 0.10 mL of polyvinylalcohol.

9. The method for forming ohmic contact to p-type semiconductor according to claim 1, wherein the performing surface treatment of the flexible GaN substrate comprises immersing in a solvent and boiling aqua regia.

10. The method for forming ohmic contact to p-type semiconductor according claim 5, wherein the polyvinylalcohol is present in an amount ranging between 0.05 milligrams to 0.25 milligrams, per milligram of the metal oxide.