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Methods for forming a silicon germanium tin layer and related semiconductor device structures

  • US 10,685,834 B2
  • Filed: 05/21/2018
  • Issued: 06/16/2020
  • Est. Priority Date: 07/05/2017
  • Status: Active Grant
First Claim
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1. A method for forming a silicon germanium tin (SiGeSn) layer, the method comprising:

  • providing a substrate within a reaction chamber;

    exposing the substrate to a pre-deposition precursor pulse which comprises tin tetrachloride (SnCl4);

    exposing the substrate to a deposition precursor gas mixture comprising;

    a hydrogenated silicon source, germane (GeH4), and tin tetrachloride (SnCl4); and

    depositing the silicon germanium tin (SiGeSn) layer over a surface of the substrate.

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