×

III-nitride tunnel junction with modified P-N interface

  • US 10,685,835 B2
  • Filed: 11/01/2016
  • Issued: 06/16/2020
  • Est. Priority Date: 11/04/2015
  • Status: Active Grant
First Claim
Patent Images

1. A method for fabricating a III-nitride semiconductor device, comprising:

  • performing a growth of a III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer that is a III-nitride layer for reducing tunneling resistance as compared to the III-nitride tunnel junction without the delta-doped layer;

    wherein the performing step comprises;

    performing a first growth of the III-nitride tunnel junction with III-nitride p-type material using metal-organic chemical vapor deposition (MOCVD);

    depositing the delta-doped layer in, on or above the III-nitride p-type material; and

    performing a subsequent regrowth of the III-nitride tunnel junction with III-nitride n-type material on the delta-doped layer and III-nitride p-type material using a different growth technique than MOCVD.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×