Etching substrates using ALE and selective deposition
First Claim
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1. A method of processing substrates, the method comprising:
- (a) exposing a substrate comprising a first carbon-containing material to an oxidant and igniting a first plasma to modify a surface of the first carbon-containing material; and
(b) exposing the modified surface to a second plasma at a bias power and for a duration sufficient to remove the modified surface without sputtering.
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Abstract
Methods of and apparatuses for processing substrates having carbon-containing material using atomic layer etch and selective deposition are provided. Methods involve exposing a carbon-containing material on a substrate to an oxidant and igniting a first plasma to modify a surface of the substrate and exposing the modified surface to a second plasma at a bias power to remove the modified surface. Methods also involve selectively depositing a second carbon-containing material onto the substrate using a precursor having a chemical formula of CxHy, where x and y are integers greater than or equal to 1. ALE and selective deposition may be performed without breaking vacuum.
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20 Claims
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1. A method of processing substrates, the method comprising:
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(a) exposing a substrate comprising a first carbon-containing material to an oxidant and igniting a first plasma to modify a surface of the first carbon-containing material; and (b) exposing the modified surface to a second plasma at a bias power and for a duration sufficient to remove the modified surface without sputtering. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of processing substrates, the method comprising:
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(a) exposing a substrate comprising a first carbon-containing material to an oxidant and igniting a first plasma to modify a surface of the first carbon-containing material; (b) exposing the modified surface to a second plasma at a bias power and for a duration sufficient to remove the modified surface without sputtering; and (c) selectively depositing a second carbon-containing material on the substrate to fill crevices on the first carbon-containing material using a precursor having a chemical formula of CxHy, where x and y are integers greater than or equal to 1. - View Dependent Claims (20)
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Specification