Deep photoenhanced wet material etching using high-power ultraviolet light emitting diodes
First Claim
1. A method of etching GaN, comprising:
- submerging a substrate having a diameter of at least two inches (5.08 centimeters) into an etching solution in a bath, wherein the substrate comprises GaN or a layer comprising GaN is disposed over the substrate; and
illuminating an entire surface of the substrate comprising GaN or an entire surface of the layer comprising GaN disposed over the substrate with an intensity of light in a range from 1 W/cm2 to 10 W/cm2 using at least one light emitting diode (LED) source outputting an intensity of light in a range from 1 W/cm2 to 40 W/cm2.
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Abstract
Methods and systems for etching a substrate using photoenhanced wet etching techniques are described. At least one light emitting diode source is used to create a high intensity of ultraviolet light at the surface of the substrate or at one or more layers formed on the substrate. Etching rates in GaN substrates and GaN layers are improved by an order of magnitude over conventional systems. Systems and methods for forming a device structure free of a substrate are described. The device structure is grown or applied over a release layer on a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device structure from the substrate.
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Citations
25 Claims
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1. A method of etching GaN, comprising:
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submerging a substrate having a diameter of at least two inches (5.08 centimeters) into an etching solution in a bath, wherein the substrate comprises GaN or a layer comprising GaN is disposed over the substrate; and illuminating an entire surface of the substrate comprising GaN or an entire surface of the layer comprising GaN disposed over the substrate with an intensity of light in a range from 1 W/cm2 to 10 W/cm2 using at least one light emitting diode (LED) source outputting an intensity of light in a range from 1 W/cm2 to 40 W/cm2. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 25)
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24. A system for photoenhanced etching of GaN, comprising:
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a bath including an etching solution into which a substrate is submerged, wherein the substrate comprises GaN or a layer comprising GaN is disposed over the substrate; and at least one light emitting diode source to illuminate the substrate comprising GaN or the layer comprising GaN disposed over the substrate, wherein a surface of the substrate has a diameter in a range of two inches (5.08 centimeters) to eight inches (20.32 centimeters) and wherein an intensity of light provided by the system across the entire surface of the substrate or across the entire surface of the layer comprising GaN disposed over the substrate is in a range from 1 W/cm2 to 10 W/cm2.
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Specification