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Integrated circuit device

  • US 10,685,960 B2
  • Filed: 10/23/2018
  • Issued: 06/16/2020
  • Est. Priority Date: 04/10/2018
  • Status: Active Grant
First Claim
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1. An integrated circuit device comprising:

  • a substrate comprising a first device region and a second device region;

    a first fin separation insulating portion over the first device region;

    a pair of first fin-type active regions spaced apart from each other in the first device region, with the first fin separation insulating portion therebetween, a first element of the pair of first fin-type active regions collinearly extending in a first horizontal direction with a second element of the pair of first fin-type active regions;

    a first dummy gate structure covering an upper surface of the first fin separation insulating portion to vertically overlap the first fin separation insulating portion, and extending in a second horizontal direction over the first device region, the second horizontal direction crossing the first horizontal direction;

    a second fin separation insulating portion spaced apart from the first fin separation insulating portion and arranged over the second device region, and collinearly extending with the first dummy gate structure in the second horizontal direction; and

    a plurality of second fm-type active regions spaced apart from each other in the second device region with the second fin separation insulating portion therebetween, the plurality of second fin-type active regions collinearly extending in the first horizontal direction,wherein a vertical level of a lowermost surface of the second fin separation insulating portion is lower than a vertical level of a lowermost surface of the first fin separation insulating portion.

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