Semiconductor device and method for manufacturing the same

• US 10,686,061 B2
• Filed: 06/13/2019
• Issued: 06/16/2020
• Est. Priority Date: 03/05/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime
• Primary Examiner(s): Lee, Eugene
• Application Number:
  US16/440,260
• Publication Number:
  US 20190312133A1
• Time in Patent Office: 369 Days
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/26 including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 , e.g. alloys
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a light-transmitting third electrode provided over the insulating layer in a region overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode.

Claims

1. A display device comprising:

a first pixel comprising;

a first conductive layer;

a second conductive layer in contact with the first conductive layer;

a first oxide semiconductor layer in contact with the second conductive layer;

a second oxide semiconductor layer overlapping with the first conductive layer;

a gate electrode overlapping with the first oxide semiconductor layer; and

a pixel electrode in contact with the second conductive layer;

a first gate wiring electrically connected to the first pixel;

a second gate wiring electrically connected to a second pixel adjacent to the first pixel;

a first wiring electrically connected to the first pixel; and

a second wiring electrically connected to the first pixel,

wherein;

the gate electrode contains the same metal material as a metal material contained in the first conductive layer,

the first wiring contains the same metal material as a metal material contained in the second conductive layer,

in a plan view, each of the first conductive layer, the second conductive layer, the first oxide semiconductor layer, the second oxide semiconductor layer, and the gate electrode overlaps with a region surrounded by the first gate wiring, the second gate wiring, the first wiring, and the second wiring, and

the pixel electrode overlaps with the first conductive layer, the second conductive layer, the first oxide semiconductor layer, the second oxide semiconductor layer, the gate electrode, the first gate wiring, and the first wiring.

3. The display device according to claim 1, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer contains indium, gallium, and zinc.

5. The display device according to claim 1, wherein the metal material contained in the first conductive layer is titanium.

7. The display device according to claim 1, wherein the metal material contained in the second conductive layer is titanium.

9. The display device according to claim 1, wherein the pixel electrode further overlaps with the second gate wiring and the second wiring.

11. The display device according to claim 1, wherein the display device further comprises a light-emitting element including the pixel electrode.

2. A display device comprising:

a first pixel comprising;

a first conductive layer;

a second conductive layer in contact with the first conductive layer;

a third conductive layer overlapping with the first conductive layer;

a first oxide semiconductor layer in contact with the second conductive layer;

a second oxide semiconductor layer overlapping with the first conductive layer;

a gate electrode overlapping with the first oxide semiconductor layer; and

a pixel electrode in contact with the second conductive layer;

a first gate wiring electrically connected to the first pixel;

a second gate wiring electrically connected to a second pixel adjacent to the first pixel;

a first wiring electrically connected to the first pixel; and

a second wiring electrically connected to the first pixel,

wherein;

the gate electrode contains the same metal material as a metal material contained in the first conductive layer,

the first wiring contains the same metal material as a metal material contained in each of the second conductive layer and the third conductive layer,

in a plan view, each of the first conductive layer, the second conductive layer, the third conductive layer, the first oxide semiconductor layer, the second oxide semiconductor layer, and the gate electrode overlaps with a region surrounded by the first gate wiring, the second gate wiring, the first wiring, and the second wiring, and

the pixel electrode overlaps with the first conductive layer, the second conductive layer, the third conductive layer, the first oxide semiconductor layer, the second oxide semiconductor layer, the gate electrode, the first gate wiring, and the first wiring.

4. The display device according to claim 2, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer contains indium, gallium, and zinc.

6. The display device according to claim 2, wherein the metal material contained in the first conductive layer is titanium.

8. The display device according to claim 2, wherein the metal material contained in each of the second conductive layer and the third conductive layer is titanium.

10. The display device according to claim 2, wherein the pixel electrode further overlaps with the second gate wiring and the second wiring.

12. The display device according to claim 2, wherein the display device further comprises a light-emitting element including the pixel electrode.