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Semiconductor device and method for manufacturing the same

  • US 10,686,061 B2
  • Filed: 06/13/2019
  • Issued: 06/16/2020
  • Est. Priority Date: 03/05/2009
  • Status: Active Grant
First Claim
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1. A display device comprising:

  • a first pixel comprising;

    a first conductive layer;

    a second conductive layer in contact with the first conductive layer;

    a first oxide semiconductor layer in contact with the second conductive layer;

    a second oxide semiconductor layer overlapping with the first conductive layer;

    a gate electrode overlapping with the first oxide semiconductor layer; and

    a pixel electrode in contact with the second conductive layer;

    a first gate wiring electrically connected to the first pixel;

    a second gate wiring electrically connected to a second pixel adjacent to the first pixel;

    a first wiring electrically connected to the first pixel; and

    a second wiring electrically connected to the first pixel,wherein;

    the gate electrode contains the same metal material as a metal material contained in the first conductive layer,the first wiring contains the same metal material as a metal material contained in the second conductive layer,in a plan view, each of the first conductive layer, the second conductive layer, the first oxide semiconductor layer, the second oxide semiconductor layer, and the gate electrode overlaps with a region surrounded by the first gate wiring, the second gate wiring, the first wiring, and the second wiring, andthe pixel electrode overlaps with the first conductive layer, the second conductive layer, the first oxide semiconductor layer, the second oxide semiconductor layer, the gate electrode, the first gate wiring, and the first wiring.

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