MEMS device including a capacitive pressure sensor and manufacturing process thereof
First Claim
1. A MEMS device comprising:
- a first semiconductor die including a chamber, the first semiconductor die including a transducer and a column in the chamber; and
a second semiconductor die coupled to the first semiconductor die, a first surface of the second semiconductor die facing the column and forming a membrane, wherein the column and the membrane form plates of a capacitive pressure sensor, and wherein the first surface of the second semiconductor die includes an absorber element facing the transducer.
0 Assignments
0 Petitions
Accused Products
Abstract
MEMS device, in which a body made of semiconductor material contains a chamber, and a first column inside the chamber. A cap of semiconductor material is attached to the body and forms a first membrane, a first cavity and a first channel. The chamber is closed on the side of the cap. The first membrane, the first cavity, the first channel and the first column form a capacitive pressure sensor structure. The first membrane is arranged between the first cavity and the second face, the first channel extends between the first cavity and the first face or between the first cavity and the second face and the first column extends towards the first membrane and forms, along with the first membrane, plates of a first capacitor element.
-
Citations
20 Claims
-
1. A MEMS device comprising:
-
a first semiconductor die including a chamber, the first semiconductor die including a transducer and a column in the chamber; and a second semiconductor die coupled to the first semiconductor die, a first surface of the second semiconductor die facing the column and forming a membrane, wherein the column and the membrane form plates of a capacitive pressure sensor, and wherein the first surface of the second semiconductor die includes an absorber element facing the transducer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A MEMS device comprising:
-
a first semiconductor die including a chamber, the first semiconductor die including a transducer and a column in the chamber; and a second semiconductor die coupled to the first semiconductor die, wherein a first surface of the second semiconductor die faces the column, wherein a membrane and an absorber element are located at the first surface of the second semiconductor die, wherein the absorber element faces the transducer, and wherein the membrane is formed by a channel formed at the first surface of the second semiconductor die, the column and the membrane forming plates of a capacitive pressure sensor. - View Dependent Claims (12, 13, 14, 15)
-
-
16. A MEMS device comprising:
-
a first semiconductor die including a chamber, the first semiconductor die including a transducer and first and second columns in the chamber; and a second semiconductor die coupled to the first semiconductor die, a first surface of the second semiconductor die facing the first and second columns and forming first and second membranes, respectively, wherein the first column and the first membrane form plates of a first capacitive pressure sensor, wherein the second column and the second membrane form plates of a second capacitive pressure sensor. - View Dependent Claims (17, 18, 19, 20)
-
Specification