Radiation imaging system

• US 10,690,787 B2
• Filed: 06/28/2019
• Issued: 06/23/2020
• Est. Priority Date: 07/16/2018
• Status: Active Grant

• Current Assignee: Vieworks Co., Ltd.
• Original Assignee: Vieworks Co., Ltd.
• Inventors: Lee, Denny Lap Yen
• Primary Examiner(s): Porta, David P
• Assistant Examiner(s): Gutierrez, Gisselle M
• Application Number:
  US16/456,145
• Publication Number:
  US 20200018864A1
• Time in Patent Office: 361 Days
• Field of Search: 25037009
• CPC Class Codes: G01T 1/1606 with other specified detectors not provided for in the other sub-groups of G01T1/16 see provisionally also G01T1/16
• CPC Class Codes: G01T 1/20 with scintillation detectors
• CPC Class Codes: G01T 1/24 with semiconductor detectors
• CPC Class Codes: G01T 1/2928 using solid state detectors
• CPC Class Codes: H01L 27/14676 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00
• CPC Class Codes: H01L 31/115 Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Abstract

A radiation imaging system includes a radiation-emitting device and a radiation imaging device. The radiation imaging device has an electrical insulation layer having a top surface and a bottom surface, a top electrode on the top surface of the electrical insulation layer, an array of pixel units electrically coupled to the electrical insulation layer, and an array of transistors connected to the array of pixel units.

Claims

1. A radiation imaging device comprising:

an electrical insulation layer having a top surface and a bottom surface;

a top electrode on the top surface of the electrical insulation layer; and

a plurality of pixel units electrically coupled to the electrical insulation layer and in direct contact with the bottom surface of the electrical insulation layer,

wherein when a bias voltage is applied to the top electrode and a radiation beam is directed at the top electrode, the electrical insulation layer is ionized, generating a charge signal in one or more of the plurality of pixel units, and

wherein the electrical insulation layer includes no photoconductive layer.

2. The radiation imaging device as claimed in claim 1, wherein each of the plurality of pixel units comprises a charge collection electrode.

3. The radiation imaging device as claimed in claim 2, wherein the charge collection electrode is disposed at the bottom surface of the electrical insulation layer within the electrical insulation layer.

4. The radiation imaging device as claimed in claim 2, wherein each of the plurality of pixel units further comprises a charge storage capacitor and at least one transistor.

5. The radiation imaging device as claimed in claim 4, wherein the plurality of pixel units is disposed at the bottom surface of the electrical insulation layer.

6. The radiation imaging device as claimed in claim 4, wherein the transistor is coupled between the charge collection electrode and a charge integrating amplifier.

7. The radiation imaging device as claimed in claim 1, wherein a thickness of the electrical insulation layer is at least 0.1 micrometer.

8. The radiation imaging device as claimed in claim 1, wherein the plurality of pixel units is electrically coupled to the electrical insulation layer.

9. A radiation imaging system, comprising:

a radiation-emission device; and

a radiation imaging device configured to receive radiation from the radiation-emission device and generate an image based on the radiation, the radiation imaging device, comprising;

an electrical insulation layer having a top surface and a bottom surface;

a top electrode on the top surface of the electrical insulation layer; and

a plurality of pixel units electrically coupled to the electrical insulation layer and in direct contact with the bottom surface of the electrical insulation layer,

wherein when a bias voltage is applied to the top electrode and a radiation beam from the radiation-emission device is directed at the top electrode, the electrical insulation layer is ionized, generating a charge signal in one or more of the plurality of pixel units, and

wherein the electrical insulation layer includes no photoconductive layer.

10. The radiation imaging system of claim 9, wherein each of the plurality of pixel units comprises a charge collection electrode, and

wherein the charge collection electrode is disposed at the bottom surface of the electrical insulation layer within the electrical insulation layer.

11. The radiation imaging system of claim 9, wherein the electrical insulation layer is made of one of parylene, BCB (Benzocyclobutene), and polyimide film (KAPTON).

12. The radiation imaging system of claim 9, wherein the radiation emission device is an x-ray emitter.

13. The radiation imaging system of claim 9, wherein the radiation emission device is a charged particle beam emitter.

14. The radiation imaging system of claim 13, wherein the charged particle beam emitter is a proton beam emitter.

15. The radiation imaging system of claim 14, wherein the radiation imaging device is arranged between the charged particle beam emitter and a patient, such that a proton beam is irradiated against the patient after passing through the radiation imaging device.

16. The radiation imaging system of claim 14, wherein a thickness of the electrical insulation layer is at least about 0.1 micrometers.

17. A method of operating a radiation imaging system comprising an electrical insulation layer having a top surface and a bottom surface, a top electrode on the top surface of the electrical insulation layer, a plurality of pixel units electrically coupled to the electrical insulation layer and in direct contact with the bottom surface of the electrical insulation layer, and a transistor connected to each of the plurality of pixel units, the method comprising:

(1) applying a bias voltage to the top electrode;

(2) receiving a charged particle generated based on a radiation beam being directed at the top electrode to which the bias voltage is applied, wherein the charged particle penetrates the electrical insulation layer and generates a charge signal;

(3) storing the charge signal in a storage capacitor, such that a plurality of charge signals is stored in a plurality of storage capacitors;

(4) changing a polarity of a gate line bias voltage of one row of transistors; and

(5) integrating charges from orthogonal data lines, each connected to a respective storage capacitor among the plurality of storage capacitors.

18. The method of claim 17, wherein the step (5) further comprises digitizing the integrated charges as a value and storing the value to a computer memory.

19. The method of claim 18, wherein the method further comprises

(6) restoring the polarity of the gate line bias voltage to render the one row of the transistors to be in “

off”

states.

20. The method of claim 19, wherein the method further comprises

(7) changing the polarity of a next row of the gate line bias voltage to render the transistors in the next row to be in “

on”

states.

21. The method of claim 20, wherein a plurality of charge signals is generated by a plurality of charged particles the plurality of charge signals stored in the plurality of storage capacitors, and wherein the method further comprises

(8) repeating the steps of (5), (6), and (7) until each charge signal is read out and stored in the computer memory.

22. The method of claim 17, wherein the bias voltage has a magnitude no greater than a breakdown voltage of the electrical insulation layer.

23. The method of claim 17, wherein the radiation beam is a beam of x-rays.

24. The method of claim 23, wherein the method further comprises, before receiving the charge signal from the top electrode toward the electrical insulation layer, applying the gate line bias voltage to gates of the transistors.

25. The method of claim 24, wherein the gate line bias voltage is applied to the gates of the transistors to render the transistors to be in “

off”

states.

26. The method of claim 25, wherein, in step (4), the polarity of the gate line bias voltage of one row of the transistors is changed to render all transistors in the one row to be in “

on”

states.

27. The method of claim 17, wherein the radiation beam is a proton beam.

28. The method of claim 27, further comprising irradiating a patient with the proton beam after the beam passes through the radiation imaging system.

29. The method of claim 27, wherein electrical insulation layer is at least about 0.1 micrometer, and wherein the proton beam penetrates and passes through the electrical insulation layer.

30. The method of claim 17, wherein the radiation beam is one of an electron beam, helium ion beam, carbon ion beam, heavy ion beam, muon beam, and a pion beam.