Method and apparatus to correct for patterning process error

• US 10,691,863 B2
• Filed: 09/26/2016
• Issued: 06/23/2020
• Est. Priority Date: 10/19/2015
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Ten Berge, Peter, Mos, Everhardus Cornelis, Van Haren, Richard Johannes Franciscus, Wardenier, Peter Hanzen, Jensen, Erik
• Primary Examiner(s): Tat, Binh C
• Application Number:
  US15/769,539
• Publication Number:
  US 20180322237A1
• Time in Patent Office: 1,366 Days
• Field of Search: 716 50- 56
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 1/72 Repair or correction of mask defects
• CPC Class Codes: G06F 2111/10 Numerical modelling
• CPC Class Codes: G06F 30/398 Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] optical proximity correction [OPC] design processes G03F1/36

Abstract

A method including modeling high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modeling a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model.

Claims

1. A method comprising:

modelling, by a hardware computer system, high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model;

modelling, by the computer system, a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model;

determining, by the computer system, modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model, wherein modification of the patterning device using the patterning device modification tool comprises alteration of a property of a substrate of the patterning device with a radiation beam generated by the patterning device modification tool; and

outputting an electronic or optical signal representing the modification information, or representing data derived from the modification information, toward at least part of the patterning device modification tool for modifying the patterning device.

2. The method of claim 1, further comprising modelling a correction of the patterning error that can be made by one or more modification apparatuses of the patterning system using a further correction mathematical model, wherein the further correction mathematical model has a lower resolution than the correction mathematical model.

3. The method of claim 1, wherein high resolution patterning error comprises one or more selected from:

errors due to an etch-loading effect, errors due to projection system heating, errors due to patterning device heating, errors due to substrate heating, errors arising from illumination aberration sensitivity, errors in patterning system to patterning system matching, and/or errors in patterning device to patterning device matching.

4. The method of claim 1, further comprising selecting a sample scheme to measure patterning error information using a sample of a plurality of metrology targets on one or more substrates, the selecting based on the error mathematical model and one or more constraints.

5. The method of claim 1, wherein high resolution comprises spatial frequencies on a substrate of 1 mm or less.

6. The method of claim 1, wherein the patterning error information comprises overlay error, dose, focus and/or critical dimension.

7. A system comprising:

a hardware processor system; and

a non-transitory computer readable storage medium storing machine-readable instructions, the machine-readable instructions, upon execution by the processor system, configured to cause the processor system to at least;

model high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model;

model a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model;

determine modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model, wherein modification of the patterning device using the patterning device modification tool comprises alteration of a property of a substrate of the patterning device with a radiation beam generated by the patterning device modification tool; and

output an electronic or optical signal representing the modification information, or representing data derived from the modification information, toward the patterning modification tool for modifying the patterning device.

8. The system of claim 7, wherein when executed, the machine-readable instructions further cause the processor system to model a correction of the patterning error that can be made by one or more modification apparatuses of the patterning system using a further correction mathematical model, wherein the further correction mathematical model has a lower resolution than the correction mathematical model.

9. The system of claim 7, wherein high resolution patterning error comprises one or more selected from:

errors due to an etch-loading effect, errors due to projection system heating, errors due to patterning device heating, errors due to substrate heating, errors arising from illumination aberration sensitivity, errors in patterning system to patterning system matching, and/or errors in patterning device to patterning device matching.

10. The system of claim 7, wherein when executed, the machine-readable instructions further cause the processor system to select a sample scheme to measure patterning error information using a sample of a plurality of metrology targets on one or more substrates, the selecting based on the error mathematical model and one or more constraints.

11. The system of claim 7, wherein high resolution comprises spatial frequencies on a substrate of 1 mm or less.

12. The system of claim 7, wherein the patterning error information comprises overlay error, dose, focus and/or critical dimension.

13. The system of claim 7, wherein when executed, the machine-readable instructions further cause the processor system to cause performance of a correction, determined based on the correction mathematical model, of the patterning error by the patterning device modification tool.

14. A non-transitory computer program product comprising machine-readable instructions stored therein, the instructions, upon execution by a processor system, configured to cause the processor system to at least:

model high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model;

model a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model;

determine modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model, wherein modification of the patterning device using the patterning device modification tool comprises alteration of a property of a substrate of the patterning device with a radiation beam generated by the patterning device modification tool; and

output an electronic or optical signal representing the modification information, or representing data derived from the modification information, toward the patterning modification tool for modifying the patterning device.

15. The computer program product of claim 14, wherein when executed, the machine-readable instructions further cause the processor system to model a correction of the patterning error that can be made by one or more modification apparatuses of the patterning system using a further correction mathematical model, wherein the further correction mathematical model has a lower resolution than the correction mathematical model.

16. The computer program product of claim 14, wherein high resolution patterning error comprises one or more selected from:

errors due to an etch-loading effect, errors due to projection system heating, errors due to patterning device heating, errors due to substrate heating, errors arising from illumination aberration sensitivity, errors in patterning system to patterning system matching, and/or errors in patterning device to patterning device matching.

17. The computer program product of claim 14, wherein when executed, the machine-readable instructions further cause the processor system to select a sample scheme to measure patterning error information using a sample of a plurality of metrology targets on one or more substrates, the selecting based on the error mathematical model and one or more constraints.

18. The computer program product of claim 14, wherein high resolution comprises spatial frequencies on a substrate of 1 mm or less.

19. The computer program product of claim 14, wherein the patterning error information comprises overlay error, dose, focus and/or critical dimension.

20. The computer program product of claim 14, wherein when executed, the machine-readable instructions further cause the processor system to cause performance of a correction, determined based on the correction mathematical model, of the patterning error by the patterning device modification tool.