Semiconductor electronic device

• US 10,692,799 B2
• Filed: 06/01/2018
• Issued: 06/23/2020
• Est. Priority Date: 06/01/2018
• Status: Active Grant

• Current Assignee: InnoLux Corporation
• Original Assignee: InnoLux Corporation
• Inventors: Yueh, Jui-Jen, Lee, Kuan-Feng, Wu, Yuan-Lin
• Primary Examiner(s): Henry, Caleb E
• Application Number:
  US15/995,650
• Publication Number:
  US 20190371707A1
• Time in Patent Office: 753 Days
• Field of Search: 257288
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/4985 Flexible insulating substrates H01L23/49572 and H01L23/49855 take precedence
• CPC Class Codes: H01L 23/53228 the principal metal being copper
• CPC Class Codes: H01L 29/42372 characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out H01L29/42324 takes precedence

Abstract

An electronic device is disclosed, which includes a substrate including a first through hole; a first connecting element disposed in the first through hole; a first insulating layer disposed on the substrate and including a first via; a semiconductor layer disposed on the first insulating layer; and a first conductive layer disposed on the first insulating layer, wherein the first conductive layer includes a first conductive element extending into the first via to electrically connect the first connecting element and the semiconductor layer.

Claims

1. An electronic device, comprising:

a substrate comprising a first through hole;

a first connecting element disposed in the first through hole;

a first insulating layer disposed on the substrate and comprising a first via;

a semiconductor layer disposed on the first insulating layer; and

a first conductive layer disposed on the first insulating layer, wherein the first conductive layer comprises a first conductive element extending into the first via to electrically connect the first connecting element and the semiconductor layer;

wherein a concentration of Cu element in the first connecting element is greater than a concentration of Cu element in the first conductive element.

2. The electronic device of claim 1, wherein a distance between the semiconductor layer and the first connecting element is in a range from 5 μ

m to 500 μ

m.

3. The electronic device of claim 1, wherein a thickness of the first insulating layer is in a range from 600 nm to 1000 nm.

4. The electronic device of claim 1, further comprising:

a second conductive layer disposed between the substrate and the semiconductor layer, wherein the second conductive layer comprises a second conductive element, and the first connecting element electrically connects to the first conductive element through the second conductive element.

5. The electronic device of claim 4, wherein the concentration of Cu element in the first connecting element is greater than a concentration of Cu element in the second conductive element.

6. The electronic device of claim 4, wherein the second conductive layer further comprises a gate electrode corresponding to the semiconductor layer.

7. The electronic device of claim 1, wherein the substrate further comprises a second through hole, the electronic device further comprises a second connecting element disposed in the second through hole, and the second connecting element does not contact the first conductive layer.

8. The electronic device of claim 7, further comprising:

a conductive pad disposed under the substrate and electrically connecting to the first connecting element and the second connecting element.

9. The electronic device of claim 7, further comprising:

a circuit board disposed under the substrate and electrically connecting to the first connecting element and the second connecting element.

10. The electronic device of claim 1, further comprising:

a conductive pad disposed under the substrate and electrically connecting to the first connecting element.

11. The electronic device of claim 1, further comprising:

a circuit board disposed under the substrate and electrically connecting to the first connecting element.

12. The electronic device of claim 11, wherein the circuit board electrically connects to the first connecting element through a conductive film.

13. The electronic device of claim 1, further comprising:

a second insulating layer disposed on the first conductive layer and comprising a second via; and

a third conductive layer disposed on the second insulating layer and comprising a third conductive element, wherein the third conductive element extends into the second via to electrically connect to the first conductive element.

14. The electronic device of claim 13, further comprising:

a third insulating layer disposed between the semiconductor layer and the first conductive layer, wherein the third insulating layer comprises a third via, and the first conductive element extends into the first via and the third via to electrically connect to the first connecting element.

15. The electronic device of claim 14, wherein the first conductive layer further comprises a gate electrode corresponding to the semiconductor layer.

16. The electronic device of claim 13, wherein the third conductive element electrically connects to the semiconductor layer through a fourth via.

17. The electronic device of claim 13, further comprising:

a second conductive layer disposed between the substrate and the first insulating layer, wherein the second conductive layer comprises a second conductive element, and the first connecting element electrically connects to the first conductive element through the second conductive element.

18. The electronic device of claim 17, wherein the second conductive layer further comprises a light shielding element corresponding to the semiconductor layer.

19. The electronic device of claim 13, wherein the concentration of Cu element in the first connecting element is greater than a concentration of Cu element in the third conductive element.