Method of manufacturing a semiconductor device

• US 10,692,861 B2
• Filed: 09/11/2019
• Issued: 06/23/2020
• Est. Priority Date: 08/02/2011
• Status: Active Grant

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Aketa, Masatoshi, Nakano, Yuki
• Primary Examiner(s): Amer, Mounir S
• Application Number:
  US16/567,000
• Publication Number:
  US 20200006327A1
• Time in Patent Office: 286 Days
• Field of Search: None
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/02634 Homoepitaxy
• CPC Class Codes: H01L 21/046 using ion implantation
• CPC Class Codes: H01L 21/0475 Changing the shape of the semiconductor body, e.g. forming recesses, etching of the semiconductor body H01L21/302
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/8213 the substrate being a semiconductor, using SiC technology H01L21/8258 takes precedence
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05018 being a conformal layer on a patterned surface
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05557 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/05567 the external layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 : being circular
• CPC Class Codes: H01L 2224/45099 : Material
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48247 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49113 : the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/4917 : Crossed wires
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/3171 : the coating being directly applied to the semiconductor body, e.g. passivation layer H01L23/3178 takes precedence
• CPC Class Codes: H01L 23/49844 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/0716 : in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
• CPC Class Codes: H01L 29/0619 : with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0661 : specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
• CPC Class Codes: H01L 29/0692 : Surface layout
• CPC Class Codes: H01L 29/0696 : of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0804 : Emitter regions of bipolar transistors
• CPC Class Codes: H01L 29/0821 : Collector regions of bipolar transistors
• CPC Class Codes: H01L 29/0834 : Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
• CPC Class Codes: H01L 29/0865 : Disposition
• CPC Class Codes: H01L 29/1004 : Base region of bipolar transistors
• CPC Class Codes: H01L 29/1033 : with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with channel and gate aligned in the lengthwise direction H01L29/42376; with buried channel H01L29/7838
• CPC Class Codes: H01L 29/1095 : Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/1608 : Silicon carbide
• CPC Class Codes: H01L 29/408 : with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
• CPC Class Codes: H01L 29/41766 : with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/47 : Schottky barrier electrodes H01L29/435 takes precedence
• CPC Class Codes: H01L 29/6606 : the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
• CPC Class Codes: H01L 29/66068 : the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
• CPC Class Codes: H01L 29/66325 : controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
• CPC Class Codes: H01L 29/66333 : Vertical insulated gate bipolar transistors
• CPC Class Codes: H01L 29/66666 : Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/66712 : Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7393 : Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
• CPC Class Codes: H01L 29/7395 : Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/7396 : with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions H01L29/7398 takes precedence
• CPC Class Codes: H01L 29/7397 : and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/7802 : Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7805 : in antiparallel, e.g. freewheel diode
• CPC Class Codes: H01L 29/7827 : Vertical transistors H01L29/7802, H01L29/78642 take precedence
• CPC Class Codes: H01L 29/872 : Schottky diodes
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/10155 : being other than a cuboid
• CPC Class Codes: H01L 2924/10158 : at the passive surface
• CPC Class Codes: H01L 2924/10272 : Silicon Carbide [SiC]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H02P 27/06 : using dc to ac converters or inverters H02P27/05 takes precedence

Abstract

A method for manufacturing a semiconductor device having an SiC-IGBT and an SiC-MOSFET in a single semiconductor chip, including forming a second conductive-type SiC base layer on a substrate, and selectively implanting first and second conductive-type impurities into surfaces of the substrate and base layer to form a collector region, a channel region in a surficial portion of the SiC base layer, and an emitter region in a surficial portion of the channel region, the emitter region serving also as a source region of the SiC-MOSFET.

Claims

1. A semiconductor device comprising:

an IGBT (Insulated Gate Bipolar Semiconductor) including;

a semiconductor layer having a first surface and a second surface;

a first conductive-type collector region formed such that the collector region is exposed on the second surface of the semiconductor layer;

a second conductive-type base region formed closer to the first surface of the semiconductor layer with respect to the collector region such that the base region is in contact with the collector region;

a first conductive-type channel region formed closer to the first surface of the semiconductor layer with respect to the base region such that the channel region is in contact with the base region;

a second conductive-type emitter region formed closer to the first surface of the semiconductor layer with respect to the channel region such that the emitter region is in contact with the channel region, the emitter region forming a portion of the first surface of the semiconductor layer;

a collector electrode formed such that the collector electrode is in contact with the second surface of the semiconductor layer, the collector electrode connected to the collector region;

a gate electrode formed on the first surface of the semiconductor layer such that an insulating film is formed between the gate electrode and the semiconductor layer; and

an emitter electrode formed such that the emitter electrode is in contact with the first surface of the semiconductor layer, the emitter electrode connected to the emitter region, and

a Schottky joint portion forming a Schottky junction with the first surface of the semiconductor layer using the emitter electrode as an anode electrode in the vicinity of the IGBT.

2. The semiconductor device according to claim 1, comprising a second conductive-type cathode region formed such that the cathode region is exposed on the second surface of the semiconductor layer, wherein

the collector region and the cathode region are formed alternately.

3. The semiconductor device according to claim 1, further comprising a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) including:

a second conductive-type source region electrically connected to the emitter electrode;

a second conductive-type drain region electrically connected to the collector electrode.

4. The semiconductor device according to claim 1, wherein

the semiconductor layer includes:

a second conductive-type substrate forming the second surface of the semiconductor layer; and

a second conductive-type base layer formed on the substrate to serve as the base region forming the first surface of the semiconductor layer, the base layer having an impurity concentration lower than that of the substrate.

5. The semiconductor device according to claim 1, further comprising a trench dug from the first surface of the semiconductor layer, the trench having a bottom surface and a side surface, wherein

the emitter electrode is embedded in the trench.

6. The semiconductor device according to claim 5, further comprising a first conductive-type region formed in the bottom surface of the trench.

7. The semiconductor device according to claim 6, wherein the first conductive-type region has a width lager than that of the trench.

8. The semiconductor device according to claim 1, further comprising:

a pn diode connected in parallel to the IGBT including;

a first conductive-type region electrically connected to the emitter electrode;

a second conductive-type region electrically connected to the collector electrode.

9. The semiconductor device according to claim 8, wherein the pn diode includes a body diode incorporated in the IGBT, the body diode formed utilizing a pn junction between the channel region and the base region of the IGBT.

10. The semiconductor device according to claim 1, further comprising an interlayer insulating film formed on the first surface of the semiconductor layer and formed with a contact hole through which the Schottky joint portion is exposed.

11. The semiconductor device according to claim 1, wherein the semiconductor layer is made of SiC.

12. A semiconductor device comprising:

a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) including;

a semiconductor layer having a first surface and a second surface;

a first conductive-type drain region formed such that the drain region is exposed on the second surface of the semiconductor layer;

a first conductive-type drift region formed closer to the first surface of the semiconductor layer with respect to the drain region such that the drift region is in contact with the drain region;

a second conductive-type channel region formed closer to the first surface of the semiconductor layer with respect to the drift region such that the channel region is in contact with the drift region;

a first conductive-type source region formed closer to the first surface of the semiconductor layer with respect to the channel region such that the source region is in contact with the channel region, the source region forming a portion of the first surface of the semiconductor layer;

a drain electrode formed such that the drain electrode is in contact with the second surface of the semiconductor layer, the drain electrode connected to the drain region;

a gate electrode formed on the first surface of the semiconductor layer such that an insulating film is formed between the gate electrode and the semiconductor layer; and

an source electrode formed such that the source electrode is in contact with the first surface of the semiconductor layer, the source electrode connected to the source region, and

a Schottky joint portion forming a Schottky junction with the first surface of the semiconductor layer using the source electrode as an anode electrode in the vicinity of the MOSFET.

13. The semiconductor device according to claim 12, further comprising a IGBT (Insulated Gate Bipolar Semiconductor) including:

a first conductive-type emitter region electrically connected to the source electrode;

a second conductive-type collector region electrically connected to the drain electrode.

14. The semiconductor device according to claim 12, wherein

the semiconductor layer includes:

a first conductive-type substrate forming the second surface of the semiconductor layer; and

a first conductive-type base layer formed on the substrate to serve as the drift region forming the first surface of the semiconductor layer, the base layer having an impurity concentration lower than that of the substrate.

15. The semiconductor device according to claim 12, further comprising a trench dug from the first surface of the semiconductor layer, the trench having a bottom surface and a side surface, wherein

the source electrode is embedded in the trench.

16. The semiconductor device according to claim 15, further comprising a second conductive-type region formed in the bottom surface of the trench.

17. The semiconductor device according to claim 16, wherein the second conductive-type region has a width lager than that of the trench.

18. The semiconductor device according to claim 12, further comprising an interlayer insulating film formed on the first surface of the semiconductor layer and formed with a contact hole through which the Schottky joint portion is exposed.

19. The semiconductor device according to claim 12, wherein the semiconductor layer is made of SiC.

20. The semiconductor device according to claim 12, further comprising:

a pn diode connected in parallel to the MOSFET including;

a second conductive-type region electrically connected to the source electrode;

a first conductive-type region electrically connected to the drain electrode.

21. The semiconductor device according to claim 20, wherein the pn diode includes a body diode incorporated in the MOSFET, the body diode formed utilizing a pn junction between the channel region and the drift region of the MOSFET.