Electronic device package and fabricating method thereof

• US 10,692,918 B2
• Filed: 05/28/2019
• Issued: 06/23/2020
• Est. Priority Date: 11/20/2012
• Status: Active Grant

• Current Assignee: Amkor Technology Singapore Holding Pte., Ltd. (Amkor Technology Incorporated)
• Original Assignee: Amkor Technology Incorporated
• Inventors: Kim, Jin Young, Park, No Sun, Kim, Yoon Joo, Lee, Seung Jae, Cha, Se Woong, Kim, Sung Kyu, Yoon, Ju Hoon
• Primary Examiner(s): Mandala, Victor A
• Application Number:
  US16/423,589
• Publication Number:
  US 20190393258A1
• Time in Patent Office: 392 Days
• CPC Class Codes: G06V 40/12 Fingerprints or palmprints
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/211 Disposition
• CPC Class Codes: H01L 2224/214 Connecting portions
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/5286 Arrangements of power or ground buses
• CPC Class Codes: H01L 24/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/20 Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14678 Contact-type imagers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/18162 of a chip with build-up interconnect

Abstract

Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 μm or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

Claims

1. A sensor device comprising:

a semiconductor die comprising a first die side, a second die side opposite the first die side, and lateral die sides extending between the first and second die sides, where the first die side comprises sensor circuitry and a bond pad;

a lateral structure that laterally covers a first lateral die side of the lateral die sides, wherein the lateral structure comprises first dielectric material (DM1) that comprises a first DM1 side, a second DM1 side, and lateral DM1 sides extending between the first and second DM1 sides;

a conductive via structure passing through the first dielectric material;

first conductive path extending over the first die side and over the first DM1 side, and coupled to the bond pad and to a first via end of the conductive via structure;

second conductive path coupled to a second end of the conductive via structure; and

a first dielectric structure that covers the first die side and the first DM1 side, wherein the first dielectric structure comprises;

a first aperture that extends through the first dielectric structure and through which the first conductive path is coupled to the bond pad; and

a second aperture that extends through the first dielectric structure and through which the first conductive path is coupled to the first via end.

2. The sensor device of claim 1, wherein the conductive via structure passes completely through the first dielectric material of the lateral structure between the first DM1 side and the second DM1 side.

3. The sensor device of claim 2, wherein the conductive via structure comprises a continuous layer of a metal that is thicker than the semiconductor die.

4. The sensor device of claim 1, wherein the lateral structure covers a second lateral die side of the lateral die sides.

5. The sensor device of claim 1, wherein the first dielectric material of the lateral structure directly contacts the first lateral die side.

6. The sensor device of claim 1, wherein:

the lateral structure comprises a second dielectric material (DM2) that covers the second die side and the second DM1 side; and

the sensor device further comprises a conductive ball coupled to the second conductive path through an aperture that extends completely through the second dielectric material.

7. The sensor device of claim 1, wherein the first conductive path is directly connected to the bond pad and to the first via end.

8. The sensor device of claim 1, wherein the first dielectric material of the lateral structure comprises a molding compound.

9. The sensor device of claim 1, wherein the sensor circuitry comprises image sensing circuitry.

10. The sensor device of claim 1, comprising a second dielectric structure that covers at least a portion of the each of the first conductive path and the first dielectric structure, and wherein each of the first and second dielectric structures completely covers the sensor circuitry.

11. A sensor device comprising:

a semiconductor die comprising a first die side, a second die side opposite the first die side, and lateral die sides extending between the first and second die sides, where the first die side comprises sensor circuitry and a bond pad;

a lateral structure that laterally covers a first lateral die side of the lateral die sides, wherein the lateral structure comprises first dielectric material (DM1) that comprises a first DM1 side, a second DM1 side, and lateral DM1 sides extending between the first and second DM1 sides;

a conductive via structure passing through the first dielectric material;

first conductive path extending over at least a portion of the first die side and over the first DM1 side, and coupled to the bond pad and to a first via end of the conductive via structure;

second conductive path extending over the second DM1 side, and coupled to a second end of the conductive via structure;

a first dielectric structure that covers the sensor circuitry; and

a second dielectric structure that covers the first conductive path,

wherein the first conductive path extends from the bond pad toward one of the lateral die sides and past the first via end, but does not extend entirely to any of the lateral DM1 sides.

12. The sensor device of claim 11, wherein:

the lateral structure comprises a second dielectric material (DM2) that covers the second die side and the second DM1 side; and

the sensor device further comprises a conductive ball coupled to the second conductive path through an aperture that extends completely through the second dielectric material.

13. The sensor device of claim 11, wherein:

the first dielectric structure comprises a first aperture through which the first conductive path is coupled to the bond pad and a second aperture through which the first conductive path is coupled to the first via end; and

the second dielectric structure completely covers the sensor circuitry.

14. The sensor device of claim 11, wherein the conductive via structure passes entirely through the first dielectric material between the first DM1 side and the second DM1 side.

15. The sensor device of claim 14, wherein the conductive via structure comprises a continuous layer of a metal that is thicker than the semiconductor die.

16. The sensor device of claim 11, wherein the lateral structure covers a second lateral die side of the lateral die sides.

17. A sensor device comprising:

a semiconductor die comprising a first die side, a second die side opposite the first die side, and lateral die sides extending between the first and second die sides, where the first die side comprises sensor circuitry and a bond pad;

a lateral structure that laterally covers a first lateral die side of the lateral die sides, wherein the lateral structure comprises first dielectric material (DM1) that comprises a first DM1 side, a second DM1 side, and lateral DM1 sides extending between the first and second DM1 sides;

a conductive via structure passing through the first dielectric material;

first conductive path extending over at least a portion of the first die side and over the first DM1 side, and coupled to the bond pad and to a first via end of the conductive via structure;

second conductive path extending over the second DM1 side, and coupled to a second end of the conductive via structure;

a first dielectric structure that covers the sensor circuitry; and

a second dielectric structure that covers the first conductive path,

wherein;

the lateral structure comprises a second dielectric material (DM2) that covers the second die side and the second DM1 side; and

the sensor device further comprises a conductive ball coupled to the second conductive path through an aperture that extends completely through the second dielectric material.

18. A method of making a sensor device, the method comprising:

providing a semiconductor die comprising a first die side, a second die side opposite the first die side, and lateral die sides extending between the first and second die sides, where the first die side comprises sensor circuitry and a bond pad;

laterally covering a first lateral die side of the lateral die sides with a lateral structure that comprises first dielectric material (DM1), wherein the first dielectric material comprises a first DM1 side, a second DM1 side, and lateral DM1 sides extending between the first and second DM1 sides, and wherein a conductive via structure passes through the first dielectric material;

forming first conductive path extending over the first die side and over the first DM1 side, and coupled to the bond pad and to a first via end of the conductive via structure;

forming second conductive path coupled to a second end of the conductive via structure; and

forming a first dielectric structure that covers the first die side and the first DM1 side, wherein the first dielectric structure comprises;

a first aperture that extends through the first dielectric structure and through which the first conductive path is coupled to the bond pad; and

a second aperture that extends through the first dielectric structure and through which the first conductive path is coupled to the first via end.

19. The method of claim 18, wherein:

the conductive via structure passes completely through the first dielectric material between the first DM1 side and the second DM1 side; and

the conductive via structure comprises a continuous layer of a metal that is thicker than the semiconductor die.

20. The method of claim 18, wherein:

the lateral structure covers a second lateral die side of the lateral die sides; and

the first dielectric material directly contacts the first lateral die side.