Memory device and manufacturing method thereof
First Claim
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1. A memory device, comprising:
- a first gate structure and a second gate structure, disposed on a substrate;
an oxide layer, covering the first gate structure; and
a nitride layer, disposed on the substrate and covering the oxide layer and the second gate structure,wherein a refraction index of a portion of the nitride layer adjacent to an interface between the nitride layer and each of the first gate structure and the second gate structure is about 5% to 10% less than a refraction index of a remaining portion of the nitride layer.
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Abstract
A memory device and a manufacturing method thereof are provided. The memory device includes a first gate structure, a second gate structure, an oxide layer and a nitride layer. The first gate structure and the second gate structure are disposed on a substrate. The oxide layer covers the first gate structure. The nitride layer is disposed on the substrate and covers the oxide and the second gate structure. The refraction index of a portion of the nitride layer adjacent to an interface between the nitride layer and each of the first gate structure and the second gate structure is about 5% to 10% less than the refraction index of the remaining portion of the nitride layer.
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Citations
13 Claims
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1. A memory device, comprising:
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a first gate structure and a second gate structure, disposed on a substrate; an oxide layer, covering the first gate structure; and a nitride layer, disposed on the substrate and covering the oxide layer and the second gate structure, wherein a refraction index of a portion of the nitride layer adjacent to an interface between the nitride layer and each of the first gate structure and the second gate structure is about 5% to 10% less than a refraction index of a remaining portion of the nitride layer. - View Dependent Claims (2, 3)
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4. A memory device, comprising:
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a first gate structure and a second gate structure, disposed on a substrate; an oxide layer, covering the first gate structure; a first nitride layer, disposed on the substrate and covering the oxide layer and the second gate structure; and a second nitride layer, disposed on the first nitride layer, wherein a refraction index of the first nitride layer is about 5% to 10% less than a refraction index of the second nitride layer. - View Dependent Claims (5, 6)
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7. A manufacturing method of a memory device, comprising:
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forming a first gate structure and a second gate structure on a substrate; forming an oxide layer on a surface of the first gate structure; and performing a chemical vapor deposition process to form a nitride layer on the substrate, the nitride layer covering the oxide layer and the second gate structure, wherein in the chemical vapor deposition process, a RF power supply increases a power from zero to a predetermined final power, such that a refraction index of a portion of the nitride layer adjacent to an interface between the nitride layer and each of the first gate structure and the second gate structure is about 5% to 10% less than a refraction index of a remaining portion of the nitride layer. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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Specification