Semiconductor laser diode on tiled gallium containing material

• US 10,693,279 B1
• Filed: 08/29/2019
• Issued: 06/23/2020
• Est. Priority Date: 02/07/2014
• Status: Active Grant

• Current Assignee: Kyocera SLD Laser Incorporated (Kyocera Corporation)
• Original Assignee: Soraa Laser Diode, Inc. (Kyocera Corporation)
• Inventors: McLaurin, Melvin, Sztein, Alexander, Hsu, Po Shan, Raring, James W.
• Primary Examiner(s): Nguyen, Tuan N
• Application Number:
  US16/556,081
• Time in Patent Office: 299 Days
• Field of Search: 372 4401
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01S 5/00 Semiconductor lasers superluminescent diodes H01L33/00
• CPC Class Codes: H01S 5/0202 Cleaving
• CPC Class Codes: H01S 5/0206 Substrates, e.g. growth, shape, material, removal or bonding; specific crystal orientation H01S5/3202
• CPC Class Codes: H01S 5/0215 Bonding to the substrate
• CPC Class Codes: H01S 5/0216 using an intermediate compound, e.g. a glue or solder
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/0234 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• CPC Class Codes: H01S 5/028 Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
• CPC Class Codes: H01S 5/0282 Passivation layers or treatments
• CPC Class Codes: H01S 5/0421 characterised by the semiconducting contacting layers electrodes H01S5/0425
• CPC Class Codes: H01S 5/0425 Electrodes, e.g. characterised by the structure
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/2201 in a specific crystallographic orientation
• CPC Class Codes: H01S 5/3202 grown on specifically orientated substrates, or using orientation dependent growth
• CPC Class Codes: H01S 5/32025 non-polar orientation
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

In an example, the present invention provides a gallium and nitrogen containing structure. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates having one or more epitaxially grown layers. The structure has a first handle substrate coupled to each of the substrates. The orientation of a reference crystal direction for each of the substrates are parallel to within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrates.

Claims

1. A gallium and nitrogen containing structure comprising:

a plurality of {11-20}, {10-10}, {10-11}, {20-21} or {30-31} oriented gallium and nitrogen containing semiconductor substrates, each of the plurality of gallium and nitrogen containing semiconductor substrates having one or more epitaxially grown layers;

a first handle substrate having a having a bonding surface with larger area than the sum of the areas of the bonding surfaces of the plurality of the gallium and nitrogen containing substrates, wherein each of the plurality of gallium and nitrogen containing semiconductor substrates are coupled to the first handle substrate, the plurality of gallium and nitrogen containing semiconductor substrates are arranged in a tiled configuration overlying the first handle substrate, and the orientations of a reference crystal direction for each of the plurality of gallium and nitrogen containing semiconductor substrates are parallel to within 10 degrees or less;

a first bonding medium provided between the first handle substrate and each of the plurality of gallium and nitrogen containing semiconductor substrates.

2. The structure of claim 1 wherein a processed region is formed overlying each of the plurality of gallium and nitrogen containing semiconductor substrates bonded to the first handle substrate.

3. The structure of claim 1 wherein the first bonding medium comprises a dielectric oxygen or nitrogen containing material.

4. The structure of claim 1 wherein the reference crystal direction for each of the plurality of gallium and nitrogen containing semiconductor substrates are parallel to within 10 degrees or less of a selected crystal direction of the first handle substrate.

5. The structure of claim 1 wherein gallium and nitrogen containing semiconductor substrates having a thickness less than 50 micrometers.