Metrology method, computer product and system

• US 10,698,322 B2
• Filed: 12/02/2019
• Issued: 06/30/2020
• Est. Priority Date: 11/26/2014
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Den Boef, Arie Jeffrey, Bhattacharyya, Kaustuve
• Primary Examiner(s): Nikmanesh, Seahvosh
• Application Number:
  US16/700,381
• Publication Number:
  US 20200103762A1
• Time in Patent Office: 211 Days
• CPC Class Codes: G01B 11/24 for measuring contours or curvatures
• CPC Class Codes: G01B 11/27 for testing the alignment of axes means for centering or aligning a light guide within a ferrule G02B6/3834
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Abstract

A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.

Claims

1. A method comprising:

determining an asymmetric deformation of a physical target using a measured parameter of radiation diffracted by the target; and

determining, by a hardware computer system and based on the asymmetric deformation, a property of a measurement beam to optically measure the target or another target that is least sensitive to change in a target formation parameter associated with the target or the other target,

where the property, or information derived from the property, is configured to setup or modify a measurement apparatus to measure the target or other target with a measurement beam according to the property.

2. The method of claim 1, further comprising measuring the target or other target using the property of the measurement beam and correcting, based on the asymmetric deformation, an overlay or alignment value of the target or other target determined from the measurement using the property of the measurement beam.

3. The method of claim 1, wherein the asymmetric deformation comprises a positional offset, due to the asymmetry, of a measurement using the target or the other target or comprises a scale factor relating a positional offset, due to the asymmetry, of a measurement using the target or the other target to a process-dependent scale factor offset, due to the asymmetry, of measurement using the target or the other target.

4. The method of claim 1, wherein the property of the measurement beam comprises wavelength and/or polarization of the measurement beam.

5. The method of claim 1, further comprising redesigning the target or other target or forming the target or other target, based on the asymmetric deformation.

6. A method of manufacturing devices wherein a device pattern is applied to a series of substrates using a lithographic process, the method including evaluating at least one diffraction measurement target using the method of claim 1 and controlling the lithographic process for one or more of the substrates in accordance with the result of the method.

7. A non-transitory computer program product comprising machine-readable instructions therein, the instructions, upon execution by a processor system, configured to cause the processor system to cause performance of the method of claim 1.

8. A system comprising:

an inspection apparatus configured to provide a beam on a diffraction measurement target on a substrate and to detect radiation diffracted by the target to determine a parameter of a lithographic process; and

the non-transitory computer program product of claim 7.

9. A method comprising:

determining an asymmetric deformation of a target from measured values of the target; and

performing a computer simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the determined asymmetric deformation.

10. The method of claim 9, wherein the asymmetry parameter comprises a positional offset, due to the asymmetry, of a measurement using the target.

11. The method of claim 9, wherein the asymmetry parameter comprises a scale factor relating a positional offset, due to the asymmetry, of a measurement using the target to a process-dependent scale factor offset, due to the asymmetry, of measurement using the target.

12. The method of claim 9, wherein determining the asymmetric deformation of the target comprises evaluating values of overlay determined from measurement of the target or values of a process-dependent scale factor offset, due to the asymmetry, determined from measurement of the target, as a function of a parameter of the optical measurement.

13. The method of claim 12, wherein the parameter of optical measurement comprises wavelength and/or polarization of a measurement beam of the optical measurement.

14. The method of claim 12, wherein the evaluating comprises determining a fit between (i) the determined values, or a construct representing the determined values, and (ii) one or more fingerprint sets of values of the overlay or process-dependent scale factor offset as a function of the parameter of the optical measurement, or one or more fingerprint constructs representing the fingerprint sets of values, each fingerprint set or fingerprint construct representing a different asymmetric deformation.

15. The method of claim 9, further comprising analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target.

16. The method of claim 15, wherein analyzing the sensitivity comprises determining a value of a parameter of the optical measurement for a minimum value of the sensitivity of the asymmetry parameter to change in the target formation parameter.

17. The method of claim 15, wherein the analyzing comprises performing a simulation.

18. The method of claim 9, wherein performing the simulation comprises simulation of the optical measurement of overlying periodic structures set at a lateral shift of zero for a specified asymmetry.

19. The method of claim 9, further comprising determining, from the simulation, a value of a process-dependent scale factor offset, due to the asymmetry, of a measurement using the target and a value of a positional offset, due to the asymmetry, of a measurement using the target.

20. The method of claim 9, further comprising correcting, based on the asymmetry parameter, an overlay or alignment value of the target determined from measurement of the target.

21. The method of claim 9, further comprising redesigning the target or forming the target, based on the asymmetry parameter or asymmetric deformation.

22. A method of manufacturing devices wherein a device pattern is applied to a series of substrates using a lithographic process, the method including evaluating at least one diffraction measurement target using the method of claim 9 and controlling the lithographic process for one or more of the substrates in accordance with the result of the method.

23. A non-transitory computer program product comprising machine-readable instructions therein, the instructions, upon execution by a processor system, configured to cause the processor system to cause performance of the method of claim 9.

24. A method comprising:

performing a computer simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with an asymmetric deformation of the target determined from measured values of the target; and

analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target.

25. The method of claim 24, wherein the asymmetry parameter comprises a scale factor relating a positional offset, due to the asymmetry, of a measurement using the target to a process-dependent scale factor offset, due to the asymmetry, of measurement using the target.

26. The method of claim 24, further comprising determining a value of a parameter of the optical measurement for a minimum value of the sensitivity of the asymmetry parameter to change in the target formation parameter.

27. The method of claim 26, wherein the parameter of the optical measurement comprises wavelength and/or polarization of a measurement beam of the optical measurement.

28. The method of claim 24, wherein the analyzing comprises performing a simulation.

29. The method of claim 24, wherein performing the simulation comprises simulation of the optical measurement of overlying periodic structures set at a lateral shift of zero for a specified asymmetry.

30. The method of claim 24, further comprising determining, from the simulation, a value of a process-dependent scale factor offset, due to the asymmetry, used to determine a measurement using the target and a value of a positional offset, due to the asymmetry, of a measurement using the target.

31. The method of claim 24, further comprising determining the asymmetric deformation of the target by evaluating values of overlay determined from measurement of the target or values of a process-dependent scale factor offset, due to the asymmetry, determined from measurement of the target, as a function of a parameter of the optical measurement.

32. The method of claim 24, further comprising correcting, based on the asymmetry parameter, an overlay or alignment value of the target determined from measurement of the target.

33. The method of claim 24, further comprising redesigning the target or forming the target, based on the asymmetry parameter or asymmetric deformation.

34. A method of manufacturing devices wherein a device pattern is applied to a series of substrates using a lithographic process, the method including evaluating at least one diffraction measurement target using the method of claim 24 and controlling the lithographic process for one or more of the substrates in accordance with the result of the method.

35. A non-transitory computer program product comprising machine-readable instructions therein, the instructions, upon execution by a processor system, configured to cause the processor system to cause performance of the method of claim 24.