Voltage reduction circuit

• US 10,699,880 B2
• Filed: 06/29/2016
• Issued: 06/30/2020
• Est. Priority Date: 06/29/2015
• Status: Active Grant

• Current Assignee: ASM America Incorporated (ASM International NV)
• Original Assignee: Reno Technologies Inc.
• Inventors: Ulrich, Michael Gilliam
• Primary Examiner(s): Outten, Samuel S
• Application Number:
  US15/196,821
• Publication Number:
  US 20160380610A1
• Time in Patent Office: 1,462 Days
• Field of Search: 333 32
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32183 Matching circuits
• CPC Class Codes: H03H 7/38 Impedance-matching networks

Abstract

In one embodiment, the invention can be an impedance matching network including an input configured to operably couple to a radio frequency (RF) source; an output configured to operably couple to a load; a first variable capacitor; a second variable capacitor; and a third capacitor in series with the second variable capacitor and reducing a voltage on the second variable capacitor.

Claims

1. An impedance matching network comprising:

an input configured to operably couple to a radio frequency (RF) source;

an output configured to operably couple to a load;

a first variable capacitor;

a second variable capacitor comprising discrete capacitors coupled parallel to one another, each discrete capacitor having a corresponding switch in series with the discrete capacitor to switch the discrete capacitor in when closed and out when open, wherein the second variable capacitor has a minimum capacitance when each switch is open and a maximum capacitance when each switch is closed; and

a third capacitor in series with the second variable capacitor and reducing a voltage across each of the switches of the second variable capacitor;

wherein each of the first variable capacitor and the second variable capacitor is coupled to a common ground with no capacitor between the first variable capacitor and the common ground, and no capacitor between the second variable capacitor and the common ground;

wherein the second variable capacitor and the third capacitor form part of a shunt that is connected directly to the output of the matching network; and

wherein a fourth capacitor is connected directly to the output of the matching network and is parallel to the shunt.

2. The network of claim 1 wherein the load is a plasma chamber.

3. The network of claim 2 wherein the third capacitor is a non-variable capacitor.

4. The network of claim 3 wherein the first and second variable capacitors are electronically variable capacitors.

5. The network of claim 1 wherein:

the first variable capacitor forms part of a first shunt parallel to the RF source; and

the shunt comprising the second variable capacitor and the third capacitor is a second shunt parallel to the load.

6. The network of claim 5 further comprising a fourth capacitor parallel to the second shunt.

7. The network of claim 1 wherein the voltage on the second variable capacitor when the third capacitor is present is half or less than half of a voltage on the second variable capacitor when the third capacitor is not present.

8. The network of claim 1 wherein a capacitance value of the third capacitor is equal to a maximum capacitance value of the second capacitor.

9. The network of claim 1 wherein a capacitance value of the third capacitor is equal to a minimum capacitance value of the second capacitor.

10. An impedance matching network comprising:

an input;

an output;

a first variable capacitor;

a second variable capacitor comprising discrete capacitors coupled parallel to one another, each discrete capacitor having a corresponding switch in series with the discrete capacitor to switch the discrete capacitor in when closed and out when open, wherein the second variable capacitor has a minimum capacitance when each switch is open and a maximum capacitance when each switch is closed; and

a third capacitor in series with the second variable capacitor and reducing a voltage across each of the switches of the second variable capacitor;

wherein the first variable capacitor has a first capacitance, and the second variable capacitor has second capacitance;

wherein the first capacitance and the second capacitance are configured to be altered to create an impedance match at the input; and

wherein each of the first variable capacitor and the second variable capacitor is coupled to a common ground with no capacitor between the first variable capacitor and the common ground, and no capacitor between the second variable capacitor and the common ground;

wherein the second variable capacitor and the third capacitor form part of a shunt that is connected directly to the output of the matching network; and

wherein a fourth capacitor is connected directly to the output of the matching network and is parallel to the shunt.

11. The network of claim 10 wherein:

the first variable capacitor forms part of a first shunt parallel to the RF source; and

the shunt comprising the second variable capacitor and the third capacitor is a second shunt parallel to the load.

12. The network of claim 11 further comprising a first inductor is located between the first shunt and the second shunt.

13. The network of claim 10 wherein a voltage drop on the second variable capacitor when the third capacitor is present is less than a voltage drop on the variable capacitors when the third capacitor is not present.

14. The network of claim 10 wherein a capacitance value of the third capacitor is equal to a maximum capacitance value of the second capacitor.

15. The network of claim 10 wherein a capacitance value of the third capacitor is equal to a minimum capacitance value of the second capacitor.

16. A method of manufacturing a semiconductor comprising:

operably coupling a matching network between an RF source and a plasma chamber, the plasma chamber configured to deposit a material layer onto the substrate or etch a material layer from the substrate, and the matching network comprising;

an input configured to operably couple to the RF source;

an output configured to operably couple to the plasma chamber;

a first variable capacitor;

a second variable capacitor comprising discrete capacitors coupled parallel to one another, each discrete capacitor having a corresponding switch in series with the discrete capacitor to switch the discrete capacitor in when closed and out when open, wherein the second variable capacitor has a minimum capacitance when each switch is open and a maximum capacitance when each switch is closed; and

a third capacitor in series with the second variable capacitor and reducing a voltage across each of the switches of the second variable capacitor, wherein each of the first variable capacitor and the second variable capacitor is coupled to a common ground with no capacitor between the first variable capacitor and the common ground, and no capacitor between the second variable capacitor and the common ground, wherein the second variable capacitor and the third capacitor form part of a shunt that is connected directly to the output of the matching network;

wherein a fourth capacitor is connected directly to the output of the matching network and is parallel to the shunt;

placing a substrate in the plasma chamber;

energizing plasma within the plasma chamber by coupling RF power from the RF source into the plasma chamber to perform a deposition or etching; and

controlling a capacitance of the first variable capacitor or the second variable capacitor to achieve an impedance match.

17. The method of claim 16 wherein:

the first variable capacitor forms part of a first shunt parallel to the RF source; and

the shunt comprising the second variable capacitor and the third capacitor is a second shunt parallel to the load.

18. A semiconductor processing tool comprising:

a plasma chamber configured to deposit a material onto a substrate or etch a material from the substrate; and

an impedance matching circuit operably coupled to the plasma chamber, matching circuit comprising;

an input configured to operably couple to a radio frequency (RF) source;

an output configured to operably couple to a load;

a first variable capacitor;

a second variable capacitor comprising discrete capacitors coupled parallel to one another, each discrete capacitor having a corresponding switch in series with the discrete capacitor to switch the discrete capacitor in when closed and out when open, wherein the second variable capacitor has a minimum capacitance when each switch is open and a maximum capacitance when each switch is closed; and

a third capacitor in series with the second variable capacitor and reducing a voltage across each of the switches of the second variable capacitor;

wherein each of the first variable capacitor and the second variable capacitor is coupled to a common ground with no capacitor between the first variable capacitor and the common ground, and no capacitor between the second variable capacitor and the common ground;

wherein the second variable capacitor and the third capacitor form part of a shunt that is connected directly to the output of the matching network; and

wherein a fourth capacitor is connected directly to the output of the matching network and is parallel to the shunt.

19. A method of matching an impedance comprising:

providing a matching network between an RF source and a load, the matching network comprising;

an input configured to operably couple to the RF source;

an output configured to operably couple to the load;

a first variable capacitor;

a second variable capacitor comprising discrete capacitors coupled parallel to one another, each discrete capacitor having a corresponding switch in series with the discrete capacitor to switch the discrete capacitor in when closed and out when open, wherein the second variable capacitor has a minimum capacitance when each switch is open and a maximum capacitance when each switch is closed; and

a third capacitor in series with the second variable capacitor and reducing a voltage across each of the switches of the second variable capacitor, wherein each of the first variable capacitor and the second variable capacitor is coupled to a common ground with no capacitor between the first variable capacitor and the common ground, and no capacitor between the second variable capacitor and the common ground, wherein the second variable capacitor and the third capacitor form part of a shunt that is connected directly to the output of the matching network;

wherein a fourth capacitor is connected directly to the output of the matching network and is parallel to the shunt; and

varying a capacitance of the first variable capacitor or the second variable capacitor to achieve an impedance match.