Semiconductor processing chamber multistage mixing apparatus
First Claim
1. A semiconductor processing system component comprising:
- a mixing manifold characterized by a first end and a second end opposite the first end, wherein the mixing manifold defines a central channel through the mixing manifold, wherein the mixing manifold defines a port along an exterior of the mixing manifold, wherein the port is fluidly coupled with a first trench defined within the first end of the mixing manifold, wherein the first trench is characterized by an inner radius at a first inner sidewall and an outer radius, wherein the first inner sidewall defines a plurality of apertures defined through the first inner sidewall and providing fluid access to the central channel, wherein the first inner sidewall comprises a chamfered edge from the first end of the mixing manifold, and wherein the plurality of apertures are defined through the chamfered edge of the first inner sidewall.
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Abstract
Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.
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Citations
15 Claims
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1. A semiconductor processing system component comprising:
a mixing manifold characterized by a first end and a second end opposite the first end, wherein the mixing manifold defines a central channel through the mixing manifold, wherein the mixing manifold defines a port along an exterior of the mixing manifold, wherein the port is fluidly coupled with a first trench defined within the first end of the mixing manifold, wherein the first trench is characterized by an inner radius at a first inner sidewall and an outer radius, wherein the first inner sidewall defines a plurality of apertures defined through the first inner sidewall and providing fluid access to the central channel, wherein the first inner sidewall comprises a chamfered edge from the first end of the mixing manifold, and wherein the plurality of apertures are defined through the chamfered edge of the first inner sidewall. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor processing system component comprising:
a mixing manifold characterized by a first end and a second end opposite the first end, wherein the mixing manifold defines a central channel through the mixing manifold, wherein the mixing manifold defines a port along an exterior of the mixing manifold, wherein the port is fluidly coupled with a first trench defined within the first end of the mixing manifold, wherein the first trench is characterized by an inner radius at a first inner sidewall and an outer radius, wherein the first trench provides fluid access to the central channel through the first inner sidewall, and wherein the mixing manifold further comprises a second trench defined within the first end of the mixing manifold, wherein the second trench is located radially outward from the first trench, wherein the port is fluidly coupled with the second trench, wherein the second trench is characterized by an inner radius at a second inner sidewall, wherein the second inner sidewall further defines the outer radius of the first trench, and wherein the second inner sidewall defines a plurality of apertures defined through the second inner sidewall and providing fluid access to the first trench. - View Dependent Claims (14)
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15. A semiconductor processing system component comprising:
a mixing manifold characterized by a first end and a second end opposite the first end, wherein the mixing manifold defines a central channel through the mixing manifold, wherein the mixing manifold defines a port along an exterior of the mixing manifold, wherein the port is fluidly coupled with a first trench defined within the first end of the mixing manifold, wherein the first trench is characterized by an inner radius at a first inner sidewall and an outer radius, wherein the first trench provides fluid access to the central channel through the first inner sidewall, wherein the first inner sidewall comprises a chamfered edge from the first end of the mixing manifold, wherein the first inner sidewall defines a plurality of apertures defined through the chamfered edge of the first inner sidewall and providing fluid access to the central channel, wherein at least three apertures are defined through the first inner sidewall, and wherein the apertures are distributed equidistantly about the first inner sidewall.
Specification