Silicon die with integrated high voltage devices
First Claim
1. A method comprising:
- forming a plurality of first devices on a substrate;
forming a plurality of first interconnects on the substrate wherein ones of the plurality of first interconnects are coupled to ones of the plurality of first devices;
coupling a second substrate to ones of the plurality of first interconnects;
subsequent to coupling the second substrate to the ones of the plurality of first interconnects coupled to the ones of the plurality of first devices, forming a plurality of second devices on the second substrate to form a second device layer, wherein the second device layer is electrically coupled to ones of the plurality of first interconnects;
forming a plurality of second interconnects on the second device layer wherein ones of the plurality of second interconnects are coupled to ones of the plurality of second devices; and
forming contact points to ones of the plurality of first interconnects, the contact points operable for connection to an external source.
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Accused Products
Abstract
A method including forming a plurality of first devices and a plurality of first interconnects on a substrate; coupling a second device layer including a plurality of second devices to ones of the plurality of first interconnects, and forming a plurality of second interconnects on the second device layer. An apparatus including a first device layer including a plurality of first circuit devices disposed between a plurality of first interconnects and a plurality of second interconnects and a second device layer including a plurality of second devices juxtaposed and coupled to one of the plurality of first interconnects and the plurality of second interconnects, wherein one of the plurality of first devices and the plurality of second devices include devices having a higher voltage range than the other of the plurality of first devices and the plurality of second devices.
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Citations
13 Claims
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1. A method comprising:
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forming a plurality of first devices on a substrate; forming a plurality of first interconnects on the substrate wherein ones of the plurality of first interconnects are coupled to ones of the plurality of first devices; coupling a second substrate to ones of the plurality of first interconnects; subsequent to coupling the second substrate to the ones of the plurality of first interconnects coupled to the ones of the plurality of first devices, forming a plurality of second devices on the second substrate to form a second device layer, wherein the second device layer is electrically coupled to ones of the plurality of first interconnects; forming a plurality of second interconnects on the second device layer wherein ones of the plurality of second interconnects are coupled to ones of the plurality of second devices; and forming contact points to ones of the plurality of first interconnects, the contact points operable for connection to an external source. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method comprising:
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forming a first device layer comprising a plurality of first devices; forming a plurality of first interconnects wherein ones of the plurality of first interconnects are coupled to ones of the plurality of first devices; juxtaposing a second substrate to ones of the plurality of first interconnects; subsequent to juxtaposing the second substrate to the ones of the plurality of first interconnects coupled to the ones of the plurality of first devices, forming a plurality of second devices on the second substrate to form a second device layer, wherein the second device layer is electrically coupled to ones of the plurality of first interconnects; forming a plurality of second interconnects on the second device layer wherein ones of the plurality of second interconnects are coupled to ones of the plurality of second devices; and juxtaposing contact points to ones of the plurality of first interconnects, the contact points operable for connection to an external source, wherein one of the plurality of first devices and the plurality of second devices comprise devices having a higher voltage range than the other of the plurality of first devices and the plurality of second devices. - View Dependent Claims (10, 11, 12, 13)
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Specification