Semiconductor device

• US 10,700,099 B2
• Filed: 08/22/2019
• Issued: 06/30/2020
• Est. Priority Date: 09/13/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Miyake, Hiroyuki, Shishido, Hideaki, Koyama, Jun
• Primary Examiner(s): Tran, Thien F
• Application Number:
  US16/547,723
• Publication Number:
  US 20190386036A1
• Time in Patent Office: 313 Days
• Field of Search: None
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

Claims

1. A display device comprising:

a gate electrode;

a first insulating film;

a first metal oxide film over the first insulating film;

a second metal oxide film over the first insulating film;

a first conductive film over the first metal oxide film;

a second conductive film over the first metal oxide film;

a second insulating film over the first metal oxide film, the second metal oxide film, the first conductive film, and the second conductive film; and

a pixel electrode over the second insulating film,

wherein the gate electrode comprises a first region overlapping with a channel formation region of the first metal oxide film,

wherein the first conductive film is electrically connected to the first metal oxide film,

wherein the second conductive film is electrically connected to the first metal oxide film,

wherein the second insulating film is an oxide insulating film,

wherein the second metal oxide film comprises a second region,

wherein a conductivity of the second region is higher than a conductivity of the channel formation region of the first metal oxide film, and

wherein the pixel electrode comprises a third region overlapping with the second metal oxide film with the second insulating film interposed therebetween.

2. A display device comprising:

a gate electrode;

a first insulating film;

a first metal oxide film over the first insulating film;

a second metal oxide film over the first insulating film;

a first conductive film over the first metal oxide film;

a second conductive film over the first metal oxide film;

a second insulating film over the first metal oxide film, the second metal oxide film, the first conductive film, and the second conductive film; and

a pixel electrode over the second insulating film,

wherein the gate electrode comprises a first region overlapping with a channel formation region of the first metal oxide film,

wherein the first conductive film is electrically connected to the first metal oxide film,

wherein the second conductive film is electrically connected to the first metal oxide film,

wherein the first metal oxide film and the second metal oxide film each comprise In, Ga, and Zn,

wherein the second insulating film is an oxide insulating film,

wherein the second metal oxide film comprises a second region,

wherein a conductivity of the second region is higher than a conductivity of the channel formation region of the first metal oxide film, and

wherein the pixel electrode comprises a third region overlapping with the second metal oxide film with the second insulating film interposed therebetween.