Semiconductor element and display device using the same

• US 10,700,106 B2
• Filed: 06/19/2019
• Issued: 06/30/2020
• Est. Priority Date: 04/09/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Murakami, Satoshi, Hayakawa, Masahiko, Yamazaki, Shunpei
• Primary Examiner(s): Clark, Jasmine J
• Application Number:
  US16/445,475
• Publication Number:
  US 20190378861A1
• Time in Patent Office: 377 Days
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/1337 Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/1341 Filling or closing of cells
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: H01L 23/3171 the coating being directly applied to the semiconductor body, e.g. passivation layer H01L23/3178 takes precedence
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78606 : with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78651 : Silicon transistors H01L29/78606 - H01L29/78645 take precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10K 2102/3026 : Top emission
• CPC Class Codes: H10K 2102/311 : Flexible OLED
• CPC Class Codes: H10K 59/123 : Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 : Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/131 : Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: Y10S 438/95 : Multilayer mask including nonradiation sensitive layer

Abstract

A display device including a semiconductor element is provided. The semiconductor element includes: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

Claims

1. A display device comprising:

a semiconductor layer over a substrate;

a gate insulating film over the semiconductor layer;

a gate wiring over the gate insulating film;

a first silicon nitride film over the gate wiring;

an organic resin film over the first silicon nitride film, the organic resin film comprising a first opening;

a second silicon nitride film over and in contact with the organic resin film, the second silicon nitride film comprising a second opening; and

a first electrode over and in contact with the second silicon nitride film,

wherein the semiconductor layer comprises a first channel formation region which is overlapped with the gate wiring and a second channel formation region which is overlapped with the gate wiring,

wherein a bottom of the first opening overlaps with the first silicon nitride film,

wherein the second opening is inside the first opening,

wherein the second silicon nitride film covers a top surface of the organic resin film and an inner wall of the first opening of the organic resin film,

wherein the first electrode is electrically connected to the semiconductor layer, and

wherein the first electrode is in contact with an inner wall of the second opening of the second silicon nitride film.

2. The display device according to claim 1, wherein the first opening and an entirety of the second opening overlap with each other.

3. The display device according to claim 1, wherein the organic resin film is made from a positive type photosensitive film.

4. The display device according to claim 1, wherein the first silicon nitride film covers the semiconductor layer, the gate insulating film, and the gate wiring.

5. A display device comprising:

a semiconductor layer over a substrate;

a gate insulating film over the semiconductor layer;

a gate wiring over the gate insulating film;

a first silicon nitride film over the gate wiring;

an organic resin film over the first silicon nitride film, the organic resin film comprising a first opening;

a second silicon nitride film over and in contact with the organic resin film, the second silicon nitride film comprising a second opening; and

a first electrode over and in contact with the second silicon nitride film,

wherein the semiconductor layer comprises a first channel formation region which is overlapped with the gate wiring and a second channel formation region which is overlapped with the gate wiring,

wherein a bottom of the first opening overlaps with the first silicon nitride film,

wherein an area of a bottom of the second opening is smaller than an area of the bottom of the first opening,

wherein the second silicon nitride film covers a top surface of the organic resin film and an inner wall of the first opening of the organic resin film,

wherein the first electrode is electrically connected to the semiconductor layer, and

wherein the first electrode is in contact with an inner wall of the second opening of the second silicon nitride film.

6. The display device according to claim 5, wherein the first opening and an entirety of the second opening overlap with each other.

7. The display device according to claim 5, wherein the organic resin film is made from a positive type photosensitive film.

8. The display device according to claim 5, wherein the first silicon nitride film covers the semiconductor layer, the gate insulating film, and the gate wiring.

9. A display device comprising:

a semiconductor layer over a substrate;

a gate insulating film over the semiconductor layer;

a gate wiring over the gate insulating film;

a first silicon nitride film over the gate wiring;

a leveling film over the first silicon nitride film, the leveling film comprising a first opening;

a second silicon nitride film over and in contact with the leveling film, the second silicon nitride film comprising a second opening; and

a first electrode over and in contact with the second silicon nitride film,

wherein the semiconductor layer comprises a first channel formation region which is overlapped with the gate wiring and a second channel formation region which is overlapped with the gate wiring,

wherein a bottom of the first opening overlaps with the first silicon nitride film,

wherein the second opening is inside the first opening,

wherein the second silicon nitride film covers a top surface of the leveling film and an inner wall of the first opening of the leveling film,

wherein the first electrode is electrically connected to the semiconductor layer, and

wherein the first electrode is in contact with an inner wall of the second opening of the second silicon nitride film.

10. The display device according to claim 9, wherein the first opening and an entirety of the second opening overlap with each other.

11. The display device according to claim 9, wherein the leveling film is made from a positive type photosensitive film.

12. The display device according to claim 9, wherein the first silicon nitride film covers the semiconductor layer, the gate insulating film, and the gate wiring.

13. A display device comprising:

a semiconductor layer over a substrate;

a gate insulating film over the semiconductor layer;

a gate wiring over the gate insulating film;

a first silicon nitride film over the gate wiring;

a metal layer over the first silicon nitride film;

an organic resin film over the first silicon nitride film and the metal layer;

a second silicon nitride film over and in contact with the organic resin film; and

a pixel electrode over and in contact with the second silicon nitride film,

wherein the pixel electrode is electrically connected to the semiconductor layer via an opening of the first silicon nitride film, an opening of the organic resin film, and an opening of the second silicon nitride film,

wherein the semiconductor layer comprises a first channel formation region and a second channel formation region,

wherein the first channel formation region and the gate wiring overlap with each other,

wherein the second channel formation region and the gate wiring overlap with each other,

wherein the second silicon nitride film comprises a first section which is in contact with the organic resin film and a second section which extends from the first section inside the opening of the organic resin film,

wherein the second section of the second silicon nitride film is not contact with the organic resin film,

wherein the organic resin film is in contact with an upper surface of the metal layer, and

wherein the organic resin film is enclosed by the first silicon nitride film, the metal layer, and the second silicon nitride film.

14. The display device according to claim 13, wherein the opening of the organic resin film and an entirety of the opening of the second silicon nitride film overlap with each other.

15. The display device according to claim 13, wherein the organic resin film is made from a positive type photosensitive film.

16. The display device according to claim 13, wherein the first silicon nitride film covers the semiconductor layer, the gate insulating film, and the gate wiring.