Display device and electronic device

• US 10,700,215 B2
• Filed: 11/15/2018
• Issued: 06/30/2020
• Est. Priority Date: 09/04/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime, Akimoto, Kengo, Tsubuku, Masashi, Sasaki, Toshinari
• Primary Examiner(s): Kohlman, Christopher J
• Application Number:
  US16/191,609
• Publication Number:
  US 20190088793A1
• Time in Patent Office: 593 Days
• Field of Search: None
• CPC Class Codes: G09G 2300/0842 forming a memory circuit, e.g. a dynamic memory with one capacitor
• CPC Class Codes: G09G 3/3648 using an active matrix G09G3/367 - G09G3/3696 take precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

Claims

1. A semiconductor device comprising:

a gate electrode;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

a source electrode layer over the oxide semiconductor layer;

a drain electrode layer over the oxide semiconductor layer;

a first insulating film over the source electrode layer and the drain electrode layer;

a conductive layer over the first insulating film;

a second insulating film over the conductive layer; and

a pixel electrode over the second insulating film, the pixel electrode electrically connected one of the source electrode layer and the drain electrode layer,

wherein each of the source electrode layer and the drain electrode layer includes a first layer and a second layer over the first layer,

wherein the first layer includes indium and oxygen,

wherein the second layer includes one of aluminum, tungsten, titanium, tantalum, molybdenum, nickel, platinum, copper, gold, silver, manganese, neodymium, niobium, cerium, and chromium,

wherein each of the conductive layer and the pixel electrode includes indium and oxygen, and

wherein the conductive layer overlaps with the oxide semiconductor layer and the pixel electrode.

2. The semiconductor device according to claim 1,

wherein the gate electrode induces one of aluminum, tungsten, titanium, tantalum, molybdenum, nickel, platinum, copper, gold, silver, manganese, neodymium, niobium, cerium, and chromium.

3. The semiconductor device according to claim 1,

wherein the oxide semiconductor layer includes microcrystal or polycrystal.

4. The semiconductor device according to claim 1,

wherein the oxide semiconductor layer includes indium, gallium, and zinc.

5. A semiconductor device comprising:

a gate electrode;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

a source electrode layer over the oxide semiconductor layer;

a drain electrode layer over the oxide semiconductor layer;

a first insulating film over the source electrode layer and the drain electrode layer;

a conductive layer over the first insulating film;

a second insulating film over the conductive layer; and

a pixel electrode over the second insulating film, the pixel electrode electrically connected one of the source electrode layer and the drain electrode layer,

wherein each of the source electrode layer and the drain electrode layer includes a first layer and a second layer over the first layer,

wherein the first layer includes indium, zinc, and oxygen,

wherein the second layer includes one of aluminum, tungsten, titanium, tantalum, molybdenum, nickel, platinum, copper, gold, silver, manganese, neodymium, niobium, cerium, and chromium,

wherein each of the conductive layer and the pixel electrode includes indium, zinc, and oxygen, and

wherein the conductive layer overlaps with the oxide semiconductor layer and the pixel electrode.

6. The semiconductor device according to claim 5,

wherein the gate electrode induces one of aluminum, tungsten, titanium, tantalum, molybdenum, nickel, platinum, copper, gold, silver, manganese, neodymium, niobium, cerium, and chromium.

7. The semiconductor device according to claim 5,

wherein the oxide semiconductor layer includes microcrystal or polycrystal.

8. The semiconductor device according to claim 5,

wherein the oxide semiconductor layer includes indium, gallium, and zinc.