Compositions and methods for the deposition of silicon oxide films
First Claim
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1. A method of depositing a film comprising silicon and oxygen onto a substrate, the method comprising the steps of:
- a) providing a substrate in a reactor;
b) introducing into the reactor at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the group consisting of Formulae A and B;
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Abstract
Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B:
as defined herein.
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Citations
26 Claims
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1. A method of depositing a film comprising silicon and oxygen onto a substrate, the method comprising the steps of:
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a) providing a substrate in a reactor; b) introducing into the reactor at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the group consisting of Formulae A and B; - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of depositing a film comprising silicon and oxygen onto a substrate comprises steps of:
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a) providing a substrate in a reactor; b) introducing into the reactor at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the group consisting of Formulae A and B; - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26)
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Specification