RF impedance matching circuit and systems and methods incorporating same

• US 10,707,057 B2
• Filed: 10/28/2019
• Issued: 07/07/2020
• Est. Priority Date: 01/10/2014
• Status: Active Grant

• Current Assignee: ASM America Incorporated (ASM International NV)
• Original Assignee: Reno Technologies Inc.
• Inventors: Bhutta, Imran Ahmed, Ulrich, Michael Gilliam
• Primary Examiner(s): Le, Don P
• Application Number:
  US16/665,778
• Publication Number:
  US 20200058471A1
• Time in Patent Office: 253 Days
• Field of Search: 31511121, 315111, 315210
• CPC Class Codes: H01G 7/00 Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
• CPC Class Codes: H01J 2237/327 Arrangements for generating the plasma
• CPC Class Codes: H01J 2237/332 Coating
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32183 Matching circuits
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H03H 11/28 Impedance matching networks
• CPC Class Codes: H03H 7/38 Impedance-matching networks
• CPC Class Codes: H05K 7/20609 Air circulating in closed loop within cabinets wherein heat is removed through air-to-liquid heat-exchanger

Abstract

In one embodiment, an RF impedance matching circuit is disclosed. The matching circuit is coupled between a plasma chamber and an RF source providing an RF signal having a frequency. The matching circuit includes a first electronically variable capacitor having a first variable capacitance and a second electronically variable capacitor having a second variable capacitance. A control circuit determines a first parameter related to the plasma chamber, and then determines, based on the first parameter, a first capacitance value for the first electronically variable capacitor and a second capacitance value for the second electronically variable capacitor. The control circuit then generates a control signal to alter the first variable capacitance and the second variable capacitance accordingly, causing the RF power reflected back to the RF source to decrease while the frequency of the RF source is not altered.

Claims

1. A radio frequency (RF) impedance matching circuit comprising:

an RF input configured to operably couple to an RF source providing an RF signal having a frequency;

an RF output configured to operably couple to a plasma chamber;

a first electronically variable capacitor having a first variable capacitance;

a second electronically variable capacitor having a second variable capacitance; and

a control circuit operably coupled to the first and second electronically variable capacitors to control the first variable capacitance and the second variable capacitance, wherein the control circuit is configured to;

determine a first parameter related to the plasma chamber;

determine, based on the first parameter, a first capacitance value for the first electronically variable capacitor and a second capacitance value for the second electronically variable capacitor; and

generate a control signal to alter the first variable capacitance and the second variable capacitance to the first capacitance value and the second capacitance value, respectively;

wherein the alteration of the first variable capacitance and the second variable capacitance causes RF power reflected back to the RF source to decrease while the frequency of the RF source is not altered.

2. The matching circuit of claim 1 wherein the alteration of the first variable capacitance and the second variable capacitance causes RF power reflected back to the RF source to begin decreasing within 150 μ

sec of the determination of the first parameter related to the plasma chamber.

3. The matching circuit of claim 1 wherein the first parameter is a variable impedance of the plasma chamber.

8. The method of claim 3 wherein each of the first electronically variable capacitor and the second electronically variable capacitor comprises a plurality of discrete capacitors, each discrete capacitor having a corresponding switch to activate or deactivate the discrete capacitor;

wherein the first variable capacitance is altered to the first capacitance value by activating or deactivating at least one of the discrete capacitors of the first electronically variable capacitor; and

wherein the second variable capacitance is altered to the second capacitance value by activating or deactivating at least one of the discrete capacitors of the second electronically variable capacitor.

4. A method of matching an impedance, the method comprising:

coupling an impedance matching circuit between an RF source and a plasma chamber, the impedance matching circuit comprising;

an RF input configured to operably couple to the RF source providing an RF signal having a frequency;

an RF output configured to operably couple to the plasma chamber;

a first electronically variable capacitor having a first variable capacitance; and

a second electronically variable capacitor having a second variable capacitance;

determining a first parameter related to the plasma chamber;

determining, based on the first parameter, a first variable capacitance value for the first electronically variable capacitor and a second variable capacitance value for the second electronically variable capacitor, for creating an impedance match at the RF input of the impedance matching circuit; and

altering the first variable capacitance and the second variable capacitance to the first capacitance value and the second capacitance value, respectively, wherein the alteration of the first variable capacitance and the second variable capacitance causes RF power reflected back to the RF source to decrease while the frequency of the RF source is not altered.

5. The method of claim 4 wherein the alteration of the first variable capacitance and the second variable capacitance causes RF power reflected back to the RF source to begin decreasing within 150 μ

sec of the determination of the first parameter related to the plasma chamber.

6. The method of claim 4 wherein the first parameter is a variable impedance of the plasma chamber.

7. The method of claim 4:

wherein the steps of determining the first variable capacitance value and the second variable capacitance value and altering the first variable capacitance and the second variable capacitance are repeated to create the impedance match; and

wherein the impedance match is created in an elapsed time of about 500 μ

sec or less and results in about 10% or less RF power reflected back to the RF source.

9. The method of claim 4 wherein each discrete capacitor is coupled in series with its corresponding switch.

10. A method of manufacturing a semiconductor comprising:

placing a substrate in a plasma chamber configured to deposit a material layer onto the substrate or etch a material layer from the substrate; and

energizing plasma within the plasma chamber by coupling RF power from an RF source into the plasma chamber to perform a deposition or etching, and while energizing the plasma;

coupling an impedance matching circuit between the RF source and the plasma chamber, the impedance matching circuit comprising;

an RF input configured to operably couple to the RF source, the RF source providing an RF signal having a frequency;

an RF output configured to operably couple to the plasma chamber;

a first electronically variable capacitor having a first variable capacitance; and

a second electronically variable capacitor having a second variable capacitance;

determining a first parameter related to the plasma chamber;

determining, based on the first parameter, a first variable capacitance value for the first electronically variable capacitor and a second variable capacitance value for the second electronically variable capacitor, for creating an impedance match at the RF input of the impedance matching circuit; and

altering the first variable capacitance and the second variable capacitance to the first capacitance value and the second capacitance value, respectively, wherein the alteration of the first variable capacitance and the second variable capacitance causes RF power reflected back to the RF source to decrease while the frequency of the RF source is not altered.

11. The method of claim 10 wherein the alteration of the first variable capacitance and the second variable capacitance causes RF power reflected back to the RF source to begin decreasing within 150 μ

sec of the determination of the first parameter related to the plasma chamber.

12. A semiconductor processing tool comprising:

a plasma chamber configured to deposit a material onto a substrate or etch a material from the substrate; and

an impedance matching circuit operably coupled to the plasma chamber, the matching circuit comprising;

an RF input operably coupled to an RF source providing an RF signal having a frequency;

an RF output operably coupled to the plasma chamber;

a first electronically variable capacitor having a first variable capacitance; and

a second electronically variable capacitor having a second variable capacitance; and

a control circuit operably coupled to the first and second electronically variable capacitors to control the first variable capacitance and the second variable capacitance, wherein the control circuit is configured to;

determine a first parameter related to the plasma chamber;

determine, based on the first parameter, a first capacitance value for the first electronically variable capacitor and a second capacitance value for the second electronically variable capacitor; and

generate a control signal to alter the first variable capacitance and the second variable capacitance to the first capacitance value and the second capacitance value, respectively;

wherein the alteration of the first variable capacitance and the second variable capacitance causes RF power reflected back to the RF source to decrease while the frequency of the RF source is not altered.

13. The tool of claim 12 wherein the alteration of the first variable capacitance and the second variable capacitance causes RF power reflected back to the RF source to begin decreasing within 150 μ

sec of the determination of the first parameter related to the plasma chamber.

14. The tool of claim 12 wherein the first parameter is a variable impedance of the plasma chamber.

15. The tool of claim 12:

wherein the steps of determining the first variable capacitance value and the second variable capacitance value and altering the first variable capacitance and the second variable capacitance are repeated to create the impedance match; and

wherein the impedance match is created in an elapsed time of about 500 μ

sec or less and results in about 10% or less RF power reflected back to the RF source.

16. The tool of claim 12 wherein each of the first electronically variable capacitor and the second electronically variable capacitor comprises a plurality of discrete capacitors, each discrete capacitor having a corresponding switch to activate or deactivate the discrete capacitor;

wherein the first variable capacitance is altered to the first capacitance value by activating or deactivating at least one of the discrete capacitors of the first electronically variable capacitor; and

wherein the second variable capacitance is altered to the second capacitance value by activating or deactivating at least one of the discrete capacitors of the second electronically variable capacitor.

17. The tool of claim 16 wherein each discrete capacitor is coupled in series with its corresponding switch.