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Cascode semiconductor device structure and method therefor

  • US 10,707,203 B2
  • Filed: 12/19/2018
  • Issued: 07/07/2020
  • Est. Priority Date: 10/28/2014
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device structure, comprising:

  • providing a substrate structure comprising;

    a semiconductor substrate having a first major surface and an opposing second major surface, wherein the semiconductor substrate comprises a first doped region having a first conductivity type adjacent the second major surface; and

    a heterostructure adjacent to the first major surface, wherein the heterostructure comprises;

    a channel layer comprising a group III-V material; and

    a barrier layer disposed over the channel layer and comprising a group III-V material;

    providing a first electrode disposed proximate to a first portion of the channel layer;

    providing a second electrode disposed proximate to a second portion of the channel layer and spaced apart from the first electrode;

    providing a control electrode, wherein the control electrode is proximate to the channel layer and disposed between the first electrode and the second electrode and is configured to control a first current path in the channel layer between the first electrode and the second electrode;

    providing a second doped region of a second conductivity type opposite to the first conductivity type disposed in the semiconductor region such that the first doped region and the second doped region provide a rectifier device;

    providing a first trench electrode extending through the heterostructure into the semiconductor substrate, wherein the first trench electrode is electrically coupled to the first electrode and electrically coupled to the second doped region;

    providing a second trench electrode extending through the heterostructure and into the semiconductor substrate to at least the first doped region; and

    providing a third electrode disposed adjacent to the second major surface, wherein;

    the second trench electrode electrically connects the control electrode to the third electrode through the semiconductor substrate;

    the rectifier device is electrically coupled to the first trench electrode and electrically coupled to the third electrode, but is electrically decoupled from the second electrode; and

    the semiconductor device is configured as a two terminal device.

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