Cascode semiconductor device structure and method therefor
First Claim
1. A method of forming a semiconductor device structure, comprising:
- providing a substrate structure comprising;
a semiconductor substrate having a first major surface and an opposing second major surface, wherein the semiconductor substrate comprises a first doped region having a first conductivity type adjacent the second major surface; and
a heterostructure adjacent to the first major surface, wherein the heterostructure comprises;
a channel layer comprising a group III-V material; and
a barrier layer disposed over the channel layer and comprising a group III-V material;
providing a first electrode disposed proximate to a first portion of the channel layer;
providing a second electrode disposed proximate to a second portion of the channel layer and spaced apart from the first electrode;
providing a control electrode, wherein the control electrode is proximate to the channel layer and disposed between the first electrode and the second electrode and is configured to control a first current path in the channel layer between the first electrode and the second electrode;
providing a second doped region of a second conductivity type opposite to the first conductivity type disposed in the semiconductor region such that the first doped region and the second doped region provide a rectifier device;
providing a first trench electrode extending through the heterostructure into the semiconductor substrate, wherein the first trench electrode is electrically coupled to the first electrode and electrically coupled to the second doped region;
providing a second trench electrode extending through the heterostructure and into the semiconductor substrate to at least the first doped region; and
providing a third electrode disposed adjacent to the second major surface, wherein;
the second trench electrode electrically connects the control electrode to the third electrode through the semiconductor substrate;
the rectifier device is electrically coupled to the first trench electrode and electrically coupled to the third electrode, but is electrically decoupled from the second electrode; and
the semiconductor device is configured as a two terminal device.
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Accused Products
Abstract
A method for forming a cascode rectifier structure includes providing a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are provided adjacent a major surface of the heterostructure and a control electrode is provided between the first and second current carrying electrode. A rectifier device is provided integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is provided further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. The cascode rectifier structure is provided as a two terminal device.
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Citations
20 Claims
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1. A method of forming a semiconductor device structure, comprising:
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providing a substrate structure comprising; a semiconductor substrate having a first major surface and an opposing second major surface, wherein the semiconductor substrate comprises a first doped region having a first conductivity type adjacent the second major surface; and a heterostructure adjacent to the first major surface, wherein the heterostructure comprises; a channel layer comprising a group III-V material; and a barrier layer disposed over the channel layer and comprising a group III-V material; providing a first electrode disposed proximate to a first portion of the channel layer; providing a second electrode disposed proximate to a second portion of the channel layer and spaced apart from the first electrode; providing a control electrode, wherein the control electrode is proximate to the channel layer and disposed between the first electrode and the second electrode and is configured to control a first current path in the channel layer between the first electrode and the second electrode; providing a second doped region of a second conductivity type opposite to the first conductivity type disposed in the semiconductor region such that the first doped region and the second doped region provide a rectifier device; providing a first trench electrode extending through the heterostructure into the semiconductor substrate, wherein the first trench electrode is electrically coupled to the first electrode and electrically coupled to the second doped region; providing a second trench electrode extending through the heterostructure and into the semiconductor substrate to at least the first doped region; and providing a third electrode disposed adjacent to the second major surface, wherein; the second trench electrode electrically connects the control electrode to the third electrode through the semiconductor substrate; the rectifier device is electrically coupled to the first trench electrode and electrically coupled to the third electrode, but is electrically decoupled from the second electrode; and the semiconductor device is configured as a two terminal device. - View Dependent Claims (2, 3, 4, 5)
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6. A method of forming a semiconductor device comprising:
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providing a substrate structure comprising; a semiconductor substrate having a first major surface and an opposing second major surface; a heterostructure disposed over the first major surface, the heterostructure comprising; a group III-V channel layer; and a group III-V barrier layer over the group III-V channel layer; providing a first electrode disposed proximate to a first portion of the group III-V channel layer; providing a second electrode disposed proximate to a second portion of the group III-V channel layer and spaced apart from the first electrode; providing a control electrode disposed between the first electrode and the second electrode; providing a third electrode disposed adjacent to the second major surface of the semiconductor substrate; providing a rectifier device as part of the semiconductor substrate; and providing a fourth electrode electrically coupled to the first electrode and the rectifier device, wherein; the rectifier device is electrically decoupled from the second electrode; and the control electrode is electrically connected to the third electrode through the semiconductor substrate to provide the semiconductor device as a two terminal device. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A method of forming a semiconductor device comprising:
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providing a semiconductor substrate having a first major surface and an opposing second major surface; providing a rectifier device disposed in the semiconductor substrate; providing a heterostructure adjacent the first major surface, the heterostructure comprising; a channel layer; and a barrier layer over the channel layer; providing a first electrode disposed proximate to a first portion of the channel layer; providing a second electrode disposed proximate to a second portion of the channel layer and spaced apart from the first electrode; providing a control electrode disposed proximate to the channel layer and between the first electrode and the second electrode and configured to control a first current path between the first electrode and the second electrode; providing a first trench electrode extending through the heterostructure into the semiconductor substrate and electrically connected to the first electrode; and providing a third electrode disposed on the second major surface of the semiconductor substrate, wherein; the rectifier device is electrically connected to the first trench electrode and electrically connected to the third electrode, but not electrically connected to the second electrode, the rectifier device is configured to provide a second current path generally perpendicular to the first current path, and the control electrode is electrically coupled to the third electrode through the semiconductor substrate to provide the semiconductor device as a two-terminal device. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification