Polycrystalline gallium nitride self-supported substrate and light emitting element using same

• US 10,707,373 B2
• Filed: 08/09/2018
• Issued: 07/07/2020
• Est. Priority Date: 02/25/2016
• Status: Active Grant

• Current Assignee: NGK Insulators Limited
• Original Assignee: NGK Insulators Limited
• Inventors: Watanabe, Morimichi, Sato, Kei, Kuraoka, Yoshitaka, Imai, Katsuhiro, Nanataki, Tsutomu
• Primary Examiner(s): Garber, Charles D
• Assistant Examiner(s): Liu, Xiaoming
• Application Number:
  US16/059,250
• Publication Number:
  US 20180351038A1
• Time in Patent Office: 698 Days
• Field of Search: None
• CPC Class Codes: C30B 19/02 using molten solvents, e.g. flux
• CPC Class Codes: C30B 19/12 characterised by the substrate
• CPC Class Codes: C30B 28/04 from liquids
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: C30B 29/605 Products containing multiple oriented crystallites, e.g. columnar crystallites
• CPC Class Codes: C30B 9/12 Salt solvents, e.g. flux growth
• CPC Class Codes: H01L 31/0392 including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate textured substrates H01L31/02366
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

There is provided a self-supporting polycrystalline gallium nitride substrate having excellent characteristics such as high luminous efficiency and high conversion efficiency when used for devices, such as light emitting devices and solar cells. The self-supporting polycrystalline gallium nitride substrate is composed of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, and has a top surface and a bottom surface. The crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis on the top surface are distributed at various tilt angles from the specific crystal orientation, in which the average tilt angle thereof is 0.1° or more and less than 1° and the cross-sectional average diameter D_T of the gallium nitride-based single crystal grains at the outermost surface exposed on the top surface is 10 μm or more.

Claims

1. A self-supporting polycrystalline gallium nitride substrate composed of a plurality of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, wherein

the self-supporting polycrystalline gallium nitride substrate has a top surface and a bottom surface and the crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis performed on the top surface are distributed at various tilt angles from the specific crystal orientation, the average tilt angle thereof being 0.1°

or more and less than 1° and

the cross-sectional average diameter D_T being 10 μ

m or more at the outermost surface of the gallium nitride-based single crystal grains exposed on the top surface.

2. The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein tilt angles of the gallium nitride-based single crystal grains have a Gaussian distribution.

3. The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a single crystal structure in the direction approximately normal to the substrate.

4. The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains exposed on the top surface connect to the bottom surface without intervention of grain boundaries.

5. The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the cross-sectional average diameter D_T at the outermost surface of gallium nitride-based single crystal grains exposed on the top surface is different from the cross-sectional average diameter D_B at the outermost surface of the gallium nitride-based single crystal grains exposed on the bottom surface.

6. The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein a ratio D_T/D_B, which is the ratio of the cross-sectional average diameter D_T at the outermost surface of gallium nitride-based single crystal grains exposed on the top surface to the cross-sectional average diameter D_B at the outermost surface of the gallium nitride-based single crystal grains exposed on the bottom surface, is greater than 1.0.

7. The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a thickness of 20 μ

m or more.

8. The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a diameter of 50.8 mm or more.

9. The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are doped with an n-type dopant or a p-type dopant.

10. The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are free from a dopant.

11. The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains comprise mixed crystals.

12. The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains constituting the self-supporting polycrystalline gallium nitride substrate are crystallographically non-oriented in a direction parallel to a plate surface, which is perpendicular to the direction normal to the substrate.

13. A light emitting device comprising:

the self-supporting polycrystalline gallium nitride substrate according to claim 1; and

a light emitting functional layer disposed on the substrate, wherein the light emitting functional layer has at least one layer composed of a plurality of semiconductor single crystal grains, wherein the at least one layer has a single crystal structure in a direction approximately normal to the substrate.